Patent US4968964A successfully refreshed from Google Patents.
US4968964A
Expired / Lapsed
US
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High temperature SiC thin film thermistor
Assignee: Panasonic Holdings Corp
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Filing: 1989-04-20
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Granted: 1990-11-06
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Expires: 2009-04-20
Abstract
Abstract A thin film thermistor which includes an insulating substrate (21A), a Au-Pt fired electrode film (22A) in a particular comb-shaped pattern on the insulating substrate, with a little amount of oxide being added in the electrode film (22A), and a SiC thin film (23A) which is formed by sputtering on the substrate (21A) on which the electrode film (22A) is previously formed.
Inventors
- 👤 Takeshi Nagai
- 👤 Masahiko Itoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 12:18
CPC Classifications
A; A24; A24D; A24D3/00; H; H01; H01C; H01C7/00; H01C7/008; H01C1/00; H01C1/14; H01C1/1406; H01C1/1413; H01C17/00; H01C17/06; H01C17/075; H01C17/12; H01C7/02
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
67 words
A thin film thermistor comprising: an insulating substrate; a Au-Pt fired electrode film formed in a comb-shaped pattern on said insulating substrate, wherein oxide is added to said electrode film in an amount of 0.01-0.1% by weight based on the sum of the weights of Au and Pt; and a SiC thin film formed by sputtering on said substrate on which said electrode film is previously formed.
Claim 2
Dependent Claim
67 words
A thin film thermistor comprising: an insulating substrate; a Au-Pt fired electrode film formed in a comb-shaped pattern on said insulating substrate, wherein oxide is added to said electrode film in an amount of 0.01-0.1% by weight based on the sum of the weights of Au and Pt; and a SiC thin film formed by sputtering on said substrate on which said electrode film is previously formed.
Claim 3
Dependent Claim
33 words
A thin film thermistor according to claim 1, wherein said Au-Pt fired electrode film has a Au:Pt ratio which shows a two phase composition in a binary alloy formed of Au and Pt.
Claim 4
Dependent Claim
20 words
A thin film thermistor according to claim 1, wherein said oxide is a mixture of Ca oxide and Ti oxide.
Claim 5
Dependent Claim
14 words
A thin film thermistor according to claim 1, wherein said oxide is Ca oxide.
Claim 6
Dependent Claim
14 words
A thin film thermistor according to claim 1, wherein said oxide is Ti oxide.
Claim 7
Dependent Claim
20 words
A thin film thermistor according to claim 2, wherein said oxide is a mixture of Ca oxide and Ti oxide.
Claim 8
Dependent Claim
14 words
A thin film thermistor according to claim 2, wherein said oxide is Ca oxide.
Claim 9
Dependent Claim
14 words
A thin film thermistor according to claim 2, wherein said oxide is Ti oxide.
Claim 10
Dependent Claim
98 words
A thin film thermistor comprising: an insulating substrate; a Au-Pt fired electrode film in a comb-shaped pattern on said insulating substrate, wherein oxide except for SiO 2 is added to said electrode film in an amount of 0.01-0.1% by weight based on the sum of the weights of Au and Pt; a SiC thin film formed by sputtering on said substrate on which said electrode film is previously formed; lead wires connected to said electrode film; and a low melting temperature glass layer covering said insulating substrate on which said electrode film and said SiC film are formed.
Claim 11
Dependent Claim
98 words
A thin film thermistor comprising: an insulating substrate; a Au-Pt fired electrode film in a comb-shaped pattern on said insulating substrate, wherein oxide except for SiO 2 is added to said electrode film in an amount of 0.01-0.1% by weight based on the sum of the weights of Au and Pt; a SiC thin film formed by sputtering on said substrate on which said electrode film is previously formed; lead wires connected to said electrode film; and a low melting temperature glass layer covering said insulating substrate on which said electrode film and said SiC film are formed.
Claim 12
Dependent Claim
20 words
A thin film thermistor according to claim 9, wherein said lead wires are Pt wires of 0.1-0.2 mm in diameter.
Claim 13
Dependent Claim
36 words
A thin film thermistor according to claim 9, wherein said low melting temperature glass layer has a transition temperature higher than 500° C. and substantially the same thermal expansion coefficient as that of said insulating substrate.
Claim 14
Dependent Claim
31 words
A thin film thermistor according to claim 9, wherein said low melting temperature glass layer comprises CaO, BaO, SiO 2 , B 2 O 3 and Al 2 O 3 .
References Cited (Backward Citations)
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