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US4968646A Expired / Lapsed US ⏱️ 0.0 years remaining

Process for fabricating small size electrodes in an integrated circuit

Assignee: Thomson Composants Militaires et Spatiaux
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Filing: 1989-12-12
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Granted: 1990-11-06
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Expires: 2009-12-12
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Abstract

Abstract According to the invention, a first layer of conductive material (11) is submitted to an incomplete etching operation in the presence of a mask (13). After elimination of the mask, a second layer of conductive material is deposited, and the thus-obtained result is submitted to an etching operation without a mask, so allowing the inter-electrode gaps to be reduced. The process provides a very tight electrode configuration, and is particularly suited to charge-coupled devices.

Inventors

  • 👤 Pierre Blanchard
  • 👤 Patrick Baussand

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-01 18:49
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/01; H10D44/041

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 98 words
A process for the manufacture of electrodes in an integrated circuit, wherein said process essentially comprises the steps of: depositing a first layer of conductive material, depositing a mask over said first layer to define an electrode configuration, submitting said layer covered by said mask to an etching operation, interrupting said etching operation before said electrodes become individually defined, eliminating said mask, depositing a second layer of conductive material over said first, incompletely etched, layer and, submitting the thus obtained product to a new etching operation, in the absence of a mask, until said electrodes become individually defined.
Claim 2
Dependent Claim 98 words
A process for the manufacture of electrodes in an integrated circuit, wherein said process essentially comprises the steps of: depositing a first layer of conductive material, depositing a mask over said first layer to define an electrode configuration, submitting said layer covered by said mask to an etching operation, interrupting said etching operation before said electrodes become individually defined, eliminating said mask, depositing a second layer of conductive material over said first, incompletely etched, layer and, submitting the thus obtained product to a new etching operation, in the absence of a mask, until said electrodes become individually defined.
Claim 3
Dependent Claim 24 words
The process as claimed in claim 1, wherein said first and said second layers of conductive material are made of a same conductive material.
Claim 4
Dependent Claim 20 words
The process as claimed in claim 1, wherein said first and said second layers are made of different conductive materials.
Claim 5
Dependent Claim 38 words
The process as claimed in claim 3, wherein said first layer is made of polycrystallilne silicon and said second layer is made of a material apt to combine with said polycrystalline silicon to form a low resistivity silicide.
Claim 6
Dependent Claim 25 words
The process as claimed in claim 4, wherein there is further comprised a heat treatment step after depositing said second layer, to create said silicide.
Claim 7
Dependent Claim 25 words
The process as claimed in claim 1, wherein a protective layer is deposited on said first layer of conductive material, prior to depositing said mask.
Claim 8
Dependent Claim 15 words
The process as claimed in claim 2, wherein said same conductive material is polycrystalline silicon.

References Cited (Backward Citations)

EP0142186A2 Cited
US4727038A Cited
JPS62140432A Cited
US4849069A Cited
US4818715A Cited
US4837180A Cited
US4863879A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-11-05 1994-05-07 1994-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-11-05 1998-05-07 1998-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-11-05 2002-05-07 2002-11-06 $7700.00 Window Closed / Lapsed

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