EP0142186A2
Expired / Lapsed
EP
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Method of manufacturing a pattern of conductive material
Assignee: Koninklijke Philips NV
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Filing: 1984-10-05
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Granted: —
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Expires: 2004-10-05
Abstract
Abstract A method of providing narrow conductor tracks (metal silicide). According to the invention, a pattern of polycrystalline silicon (3) covered by a protective layer (4) is converted along the edges into silicide. This is effected in that the device is covered by a suitable metal (7) and is then silicidized laterally over a distance of 20-500 nm. The remaining silicon (3) is removed selectively. The tracks (8) obtained can serve as conductor masks or, for example, as a plate of a capacitor.
Inventors
- 👤 Pierre Hermanus Woerlee
- 👤 Johannes F. C. M. Verhoeven
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 15:54
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D44/00; H10D44/01; H10D44/041; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/0133; H10P; H10P30/00; H10P30/20; H10P30/22; H10P50/00; H10P50/71; H10P76/00; H10P76/40; H10P76/408; H10P76/4085; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/947
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
68 words
A method of manufacturing a pattern of conductive material, in which a substrate is covered at least in part by a silicon layer, after which the silicon layer is converted at least along a part of its edge into conductive material and the remaining part of the silicon layer is removed by means of a selective removal treatment, characterized in that the conductive material comprises a metal silicide.
Claim 2
Independent Claim
68 words
A method of manufacturing a pattern of conductive material, in which a substrate is covered at least in part by a silicon layer, after which the silicon layer is converted at least along a part of its edge into conductive material and the remaining part of the silicon layer is removed by means of a selective removal treatment, characterized in that the conductive material comprises a metal silicide.
Claim 3
Dependent Claim
54 words
A method as claimed in Claim 1, characterized in that the silicon layer is covered by a silicidation-preventing layer and in that, after the silicon covered by the silicidation-preventing layer has been patterned, the device is covered by a metal which forms along the edges of the silicon with the silicon a metal silicide.
Claim 4
Dependent Claim
34 words
A method as claimed in Claim 1 or 2, characterized in that the silicon is converted into silicide from the edge over a distance of at least 20 nm and at most 500 nmo
Claim 5
Dependent Claim
20 words
4 0 A method as claimed in Claim 1, 2 or 3, characterized in the metal silicide is platinum silicideo
Claim 6
Independent Claim
78 words
A method as claimed in any one of the preceding Claims, characterized in that the substrate comprises a semiconductor body, in which surface zones of a second conductivity type are formed in a surface zone of a first conductivity type in that, using the conductor track of metal silicide as a raask, impurities causing the second conductivity type are provided for forming said surface zones to obtain source and drain zones of atc least a field effect transistor.
Claim 7
Independent Claim
74 words
A method as claimed in any one of Claims 1 to 3, characterized in that there is provided a number of silicon tracks which are converted along their edges into metal silicide, which forms part of a first plate of a capacitor, after which at least the metal silicide is covered by a layer of dielectric material, which is covered by a metal layer which forms part of the second plate of the capacitor.
Claim 8
Dependent Claim
42 words
A method as claimed in Claim 6, characterized in that the silicon tracks form parallel strips having a width of at most 2 / um, which are separated from each other by grooves having a width of at most 1 / um.
Claim 9
Independent Claim
17 words
A device manufactured by means of a method claimed in any one of Claims 1 to 7.
References Cited (Backward Citations)
No citation records indexed.
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