Patent US4968639A successfully refreshed from Google Patents.
US4968639A
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Process for manufacturing CMOS integrated devices with reduced gate lengths
Assignee: STMicroelectronics SRL
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Filing: 1988-12-14
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Granted: 1990-11-06
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Expires: 2008-12-14
Abstract
Abstract A process for manufacturing CMOS integrated devices with gate lengths of less than one micron and high supply voltage is described. In order to improve the resistance of CMOS devices to breakdown and punch-through phenomena without cost increases with respect to conventional CMOS processes and limiting as much as possible the introduction of resistances in series to the transistors, less doped source and drain regions being provided in only one of the two MOS transistors, e.g. in the N-channel transistor, to increase the breakdown voltage, an oppositely doped region, e.g. with P-type doping, being provided around the source and drain regions of this first transistor to protect this first transistor against punch-through, and doped wells being provided around the source and drain regions of the complementary transistor, which is e.g. a P-channel transistor; the doped wells being oppositely doped with respect to the source and drain regions but having a lower doping level than the region of the body of semiconductor material which accommodates the complementary transistor, in order to increase the breakdown voltage of the P-channel complementary transistor.
Inventors
- 👤 Carlo Bergonzoni
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:44
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D62/00; H10D62/10; H10D62/17; H10D62/351; H10D62/357; H10D62/364; H10D62/371; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/859
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
132 words
In a body of semiconductor material defining at least one first substrate region of first conductivity type and a second substrate region of second conductivity type, a method for manufacturing CMOS integrated devices, comprising the steps of: forming a first gate on said first substrate region and second gate on said second substrate region, forming first heavily doped well regions of said first conductivity type in said first substrate regions adjacent to said first gate, forming first heavily doped source/drain regions of said second conductivity type in said first heavily doped well regions, forming second lightly doped well regions of said second conductivity type in said second substrate regions adjacent to said second gate, forming second heavily doped source/drain regions of said first conductivity type in said second lightly doped well regions.
Claim 2
Dependent Claim
132 words
In a body of semiconductor material defining at least one first substrate region of first conductivity type and a second substrate region of second conductivity type, a method for manufacturing CMOS integrated devices, comprising the steps of: forming a first gate on said first substrate region and second gate on said second substrate region, forming first heavily doped well regions of said first conductivity type in said first substrate regions adjacent to said first gate, forming first heavily doped source/drain regions of said second conductivity type in said first heavily doped well regions, forming second lightly doped well regions of said second conductivity type in said second substrate regions adjacent to said second gate, forming second heavily doped source/drain regions of said first conductivity type in said second lightly doped well regions.
Claim 3
Dependent Claim
43 words
A method according to claim 1, wherein said first heavily doped well regions of said first conductivity type in said first substrate regions and said second lightly doped well regions of said second conductivity type in said second substrate regions are formed simultaneously.
Claim 4
Dependent Claim
71 words
The method of claim 1, wherein, before forming said first heavily doped source/drain regions of said second conductivity type, lightly doped surface regions of said second conductivity type are formed in said first heavily doped well regions adjacent to said first gate, and oxide sidewall spacers are formed along side edges of said first gate, with said first heavily doped source/drain regions being formed adjacent to said lightly doped surface regions.
Claim 5
Dependent Claim
201 words
In a body of semiconductor material defining at least one first substrate region of first conductivity type and a second substrate region of second conductivity type, a method for manufacturing CMOS integrated devices, comprising the steps of: forming a first gate on said first substrate region and second gate on said second substrate region, light blanket implant of impurities of the first conductivity type to form first heavily doped well regions of the first conductivity type in said first substrate region adjacent to said first gate and second lightly doped well regions of the second conductivity type in said second substrate region adjacent to said second gate, selective introduction of impurities of the first type in said second lightly doped well regions to form heavily doped source/drain regions of the first conductivity type surrounded by lightly doped well portions of the second conductivity type in said second substrate regions of said second conductivity type, selective introduction of impurities of the second type in said first heavily doped well regions to form heavily doped source/drain regions of the second conductivity type surrounded by heavily doped well portions of the first conductivity type in said first substrate regions of said first conductivity type.
Claim 6
Dependent Claim
201 words
In a body of semiconductor material defining at least one first substrate region of first conductivity type and a second substrate region of second conductivity type, a method for manufacturing CMOS integrated devices, comprising the steps of: forming a first gate on said first substrate region and second gate on said second substrate region, light blanket implant of impurities of the first conductivity type to form first heavily doped well regions of the first conductivity type in said first substrate region adjacent to said first gate and second lightly doped well regions of the second conductivity type in said second substrate region adjacent to said second gate, selective introduction of impurities of the first type in said second lightly doped well regions to form heavily doped source/drain regions of the first conductivity type surrounded by lightly doped well portions of the second conductivity type in said second substrate regions of said second conductivity type, selective introduction of impurities of the second type in said first heavily doped well regions to form heavily doped source/drain regions of the second conductivity type surrounded by heavily doped well portions of the first conductivity type in said first substrate regions of said first conductivity type.
Claim 7
Dependent Claim
289 words
In a body of semiconductor material defining at least one first substrate region of first conductivity type and a second substrate region of second conductivity type, a method for manufacturing CMOS integrated devices, comprising the steps of: forming a first gate on said first substrate region and second gate on said second substrate region, light blanket implant of impurities of the first conductivity type to form first heavily doped well regions of the first conductivity type in said first substrate region adjacent to said first gate and second lightly doped well regions of the second conductivity type in said second substrate region adjacent to said second gate, blanket implant of impurities of the second conductivity type to form lightly doped surface regions of the second conductivity type in said first heavily doped well regions and intermediate heavily doped surface regions of the second conductivity type in said second lightly doped well regions, selective introduction of impurities of the first type in said second lightly doped well regions to compensate said intermediate heavily doped surface regions and to form heavily doped source/drain regions of the first conductivity type surrounded by lightly doped well portions of the second conductivity type in said second substrate regions of said second conductivity type, forming oxide sidewall spacers along side edges of said first and second gates, selective introduction of impurities of the second type in said first heavily doped well regions adjacent to said sidewall spacers of said first gate to form heavily doped source/drain regions of the second conductivity/type adjacent to lightly doped surface portions of the second conductivity type and downwardly surrounded by heavily doped well portions of the first conductivity type in said first substrate regions of said first conductivity type.
Claim 8
Dependent Claim
289 words
In a body of semiconductor material defining at least one first substrate region of first conductivity type and a second substrate region of second conductivity type, a method for manufacturing CMOS integrated devices, comprising the steps of: forming a first gate on said first substrate region and second gate on said second substrate region, light blanket implant of impurities of the first conductivity type to form first heavily doped well regions of the first conductivity type in said first substrate region adjacent to said first gate and second lightly doped well regions of the second conductivity type in said second substrate region adjacent to said second gate, blanket implant of impurities of the second conductivity type to form lightly doped surface regions of the second conductivity type in said first heavily doped well regions and intermediate heavily doped surface regions of the second conductivity type in said second lightly doped well regions, selective introduction of impurities of the first type in said second lightly doped well regions to compensate said intermediate heavily doped surface regions and to form heavily doped source/drain regions of the first conductivity type surrounded by lightly doped well portions of the second conductivity type in said second substrate regions of said second conductivity type, forming oxide sidewall spacers along side edges of said first and second gates, selective introduction of impurities of the second type in said first heavily doped well regions adjacent to said sidewall spacers of said first gate to form heavily doped source/drain regions of the second conductivity/type adjacent to lightly doped surface portions of the second conductivity type and downwardly surrounded by heavily doped well portions of the first conductivity type in said first substrate regions of said first conductivity type.
Claim 9
Dependent Claim
22 words
A method according to claim 5, wherein said first conductivity type is the P-type and said second conductivity type is the N-type.
Claim 10
Dependent Claim
22 words
A method according to claim 5, wherein said first conductivity type is the N-type and said second conductivity type is the P-type.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-05 | 1994-05-07 | 1994-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-05 | 1998-05-07 | 1998-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-05 | 2002-05-07 | 2002-11-06 | $7700.00 | Window Closed / Lapsed |