US4965224A
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US
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Process for fabricating an INP semiconductor thin film on silicon
Assignee: Oki Electric Industry Co Ltd
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Filing: 1989-02-09
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Granted: 1990-10-23
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Expires: 2009-02-09
Abstract
Abstract An InP semiconductor thin film is formed by a process in which an amorphous GaAs buffer layer having a good surface flatness, and then an amorphous InP buffer layer having a good surface flatness are formed on an Si substrate, and then an InP monocrystalline thin film is grown on the InP buffer layer. GaAS has a lattice constant intermediate between Si used as the substrate and InP, so the lattice mismatch is reduced.
Inventors
- 👤 Hideaki Horikawa
- 👤 Masahiro Akiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 20:34
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10F; H10F71/00; H10F71/127; H10F71/1276; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3242; H10P14/3244; H10P14/3248; H10P14/3256; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/072; Y10S148/097; Y10S438/00; Y10S438/938
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
66 words
A process for fabricating an InP semiconductor thin film, comprising the steps of: providing an Si substrate; performing heat-treatment of the Si substrate; forming an amorphous GaAs buffer layer having a good surface flatness on the Si substrate; forming an amorphous InP buffer layer having a good surface flatness on the GaAs buffer layer; and growing an InP monocrystalline thin film on the InP buffer layer.
Claim 2
Dependent Claim
66 words
A process for fabricating an InP semiconductor thin film, comprising the steps of: providing an Si substrate; performing heat-treatment of the Si substrate; forming an amorphous GaAs buffer layer having a good surface flatness on the Si substrate; forming an amorphous InP buffer layer having a good surface flatness on the GaAs buffer layer; and growing an InP monocrystalline thin film on the InP buffer layer.
Claim 3
Dependent Claim
17 words
A process according to claim 1, wherein said Si substrate has a surface with substantially (100) orientation.
Claim 4
Dependent Claim
60 words
A process according to claim 1, further comprising the step of performing chemical-etching of the surface of the Si substrate using hydrofluoric acid to remove the surface oxide film on the Si substrate; wherein said heat-heat treatment is performed in a mixture gas of arsine gas (AsH 3 ) and hydrogen and at a temperature of 900° C or higher.
Claim 5
Dependent Claim
33 words
A process according to claim 3, wherein said heat-treatment is performed in a reduced-pressure MOCVD reactor in which the subsequent formation of the GaAs buffer layer and the InP buffer layer are performed.
Claim 6
Dependent Claim
61 words
A process according to claim 1, wherein said GaAs buffer layer is formed to a thickness of about 200 angstroms or less by a reduced-pressure metal organic chemical vapor deposition using arsine gas and trimethyl-gallium (TMG) as raw materials and at a temperature of 450° C. or lower (the lower limit is the limit of growth which is about 300° C.).
Claim 7
Dependent Claim
56 words
A process according to claim 1, wherein said InP buffer layer is formed by a reduced-pressure metal organic chemical vapor deposition at a temperature of 550° C. or lower, and using phosphine and trimethyl-indium (TMI) or triethyl-indium (TEI) as raw materials, with a molar ratio PH 3 /TMI or TEI being in the order of 500.
Claim 8
Dependent Claim
25 words
A process according to claim 6, wherein said reduced-pressure metal organic chemical vapor deposition is performed at a temperature not lower than about 300° C.
Claim 9
Dependent Claim
28 words
A process according to claim 6, wherein the thickness of the InP buffer layer is the thinnest within the limit in which the lattice distortion can be alleviated.
Claim 10
Dependent Claim
18 words
A process according to claim 8, wherein the thickness of the InP buffer layer is about 200 angstroms.
Claim 11
Dependent Claim
47 words
A process according to claim 1, wherein said InP monocrystalline thin film is grown to a predetermined thickness, at a temperature of 600° to 650° C., using phosphine and TMI or TEI, as raw materials, with the molar ratio PH 3 /TMI or TEI being about 100.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-10-22 | 1994-04-23 | 1994-10-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-10-22 | 1998-04-23 | 1998-10-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-10-22 | 2002-04-23 | 2002-10-23 | $7700.00 | Window Closed / Lapsed |