Circuit for selective power-down of unused circuitry

Claim 2

A circuit for the reduction of power consumption of unused circuitry by selectively powering down said unused circuitry, said circuit comprising: a nonvolatile programmable storage means having a first current path between a first terminal and a second terminal, said second terminal being coupled to a first reference voltage; a latch means being coupled to said nonvolatile programmable storage means, said latch means having a first control electrode being coupled to receive a power-up signal which is momentarily pulsed when power is first supplied to said circuit, said latch means having a second control electrode coupled to said first terminal of said first current path, said latch means having one of two stable states upon receiving said power-up signal, said one of two stable states of said latch means being determined by the state of said nonvolatile programmable storage means; a control transistor device having a third control electrode coupled to said latch means to receive a signal corresponding to said one of two stable states, said control transistor device having a current path coupled between a power supply and said unused circuitry to provide said power supply to said unused circuitry in response to a signal on said third control electrode.

Claim 3

A circuit as in claim 1 wherein said nonvolatile programmable storage means is a floating gate EPROM and wherein when said floating gate is charged, said control transistor device does not provide power to said unused circuitry.

Claim 4

A circuit as in claim 2 wherein said unused circuitry comprises a sense amplifier for a product term of a programmable logic array.

Claim 5

A power reduction circuit for the reduction of power consumption by selectively powering down unused circuitry, said power reduction circuit comprising: a nonvolatile programmable storage means having a first current path formed between a first terminal and a second terminal of said storage means, said second terminal being coupled to a first reference voltage; a latch means comprising a first and a second transistor having second and third current paths being coupled in parallel between a second reference voltage and said first terminal of said first current path, said first transistor having a first control electrode being coupled to receive a power-up signal which is momentarily pulsed when power is first supplied to said power reduction circuit, said second transistor having a second control electrode being coupled to said first terminal of said first current path; a control transistor device having a third control electrode coupled to said first terminal of said first current path, said control transistor device having a fourth current path being coupled between a power supply and said unused circuitry to provide said power supply to said unused circuitry in response to a signal on said third control electrode, said second control electrode having one of two stable signal states after said power-up signal is momentarily pulsed, said one of two stable signal states being determined by the state of said nonvolatile programmable storage means.

Claim 6

A power reduction circuit for the reduction of power consumption by selectively powering down unused circuitry, said power reduction circuit comprising: a nonvolatile programmable storage means having a first current path formed between a first terminal and a second terminal of said storage means, said second terminal being coupled to a first reference voltage; a latch means comprising a first and a second transistor having second and third current paths being coupled in parallel between a second reference voltage and said first terminal of said first current path, said first transistor having a first control electrode being coupled to receive a power-up signal which is momentarily pulsed when power is first supplied to said power reduction circuit, said second transistor having a second control electrode being coupled to said first terminal of said first current path; a control transistor device having a third control electrode coupled to said first terminal of said first current path, said control transistor device having a fourth current path being coupled between a power supply and said unused circuitry to provide said power supply to said unused circuitry in response to a signal on said third control electrode, said second control electrode having one of two stable signal states after said power-up signal is momentarily pulsed, said one of two stable signal states being determined by the state of said nonvolatile programmable storage means.

Claim 7

A power reduction circuit as in claim 4 wherein said nonvolatile programmable storage means is a floating gate EPROM and wherein when said floating gate is charged, said control transistor device does not provide power to said unused circuitry.

Claim 8

A power reduction circuit as in claim 5 wherein said unused circuitry comprises a sense amplifier for a product term of a programmable logic array.

Claim 9

A power reduction circuit as in claim 6 wherein said third control electrode is coupled to said first terminal of said first current path through a logic gate and a first inverter and wherein said second control electrode is coupled to said first terminal of said first current path through said logic gate and a second inverter, and further comprising a means for providing power to said unused circuitry regardless of the state of said nonvolatile programmable storage device, said means for providing power comprising said logic gate having a first and a second input and an output, said first input of said logic gate being coupled to said first terminal of said first current path and said second input of said logic gate being coupled to receive a signal causing said means for providing power to provide power to said unused circuitry, said output of said logic gate being coupled to the input of said first inverter, the output of said first inverter being coupled to said third control electrode, said output of said logic gate being coupled to the input of said second inverter and the output of said second inverter being coupled to said second control electrode.

Claim 10

A power reduction circuit as in claim 7 wherein said logic gate is a CMOS NAND gate and said first and said second inverters are CMOS inverters.

Claim 11

A CMOS power reduction circuit for the reduction of power consumption of a sense amplifier for an unused product term of a programmable logic array, said CMOS power reduction circuit comprising: a nonvolatile programmable storage means having a first current path between a first terminal and a second terminal, said second terminal being coupled to a first reference voltage, said nonvolatile programmable storage means having a floating gate to store charges, said floating gate having one of two possible states being charged and uncharged; a first and a second MOS field effect transistor, said first MOS field effect transistor having a first control electrode coupled to receive a power-up signal which is momentarily pulsed when power is first supplied to said CMOS power reduction circuit, said first MOS filed effect transistor having a second current path, said second MOS filed effect transistor having a second control electrode and a third current path, said second current path and said third current path being coupled in parallel between a second reference voltage and a third terminal; a third MOS field effect transistor having a third control electrode coupled to receive a third reference voltage and having a fourth current path having a one end and an other end, said one end of said fourth current path being coupled to said third terminal and said other end of said fourth current path coupled to said first terminal of said nonvolatile programmable storage means; a logic gate having a first and a second input and a first output, said first input being coupled to said third terminal and said second input being coupled to receive a signal causing power to be provided to said sense amplifier regardless of the state of said floating gate; a first inverter and a second inverter, said first inverter having a third input and a second output, said second inverter having a fourth input and a third output, said third input and said fourth input being coupled to said first output of said logic gate, said third output being coupled to said second control electrode; a control transistor device having a fourth control electrode coupled to said second output of said first inverter and having a fifth current path being coupled between a power supply and said sense amplifier to selectively provide said power supply to said sense amplifier in response to a signal on said fourth control electrode, said signal on said fourth control electrode having one of two stable signal states after said power-up signal is momentarily pulsed being determined by the state of said floating gate.

Claim 12

A CMOS power reduction circuit for the reduction of power consumption of a sense amplifier for an unused product term of a programmable logic array, said CMOS power reduction circuit comprising: a nonvolatile programmable storage means having a first current path between a first terminal and a second terminal, said second terminal being coupled to a first reference voltage, said nonvolatile programmable storage means having a floating gate to store charges, said floating gate having one of two possible states being charged and uncharged; a first and a second MOS field effect transistor, said first MOS field effect transistor having a first control electrode coupled to receive a power-up signal which is momentarily pulsed when power is first supplied to said CMOS power reduction circuit, said first MOS filed effect transistor having a second current path, said second MOS filed effect transistor having a second control electrode and a third current path, said second current path and said third current path being coupled in parallel between a second reference voltage and a third terminal; a third MOS field effect transistor having a third control electrode coupled to receive a third reference voltage and having a fourth current path having a one end and an other end, said one end of said fourth current path being coupled to said third terminal and said other end of said fourth current path coupled to said first terminal of said nonvolatile programmable storage means; a logic gate having a first and a second input and a first output, said first input being coupled to said third terminal and said second input being coupled to receive a signal causing power to be provided to said sense amplifier regardless of the state of said floating gate; a first inverter and a second inverter, said first inverter having a third input and a second output, said second inverter having a fourth input and a third output, said third input and said fourth input being coupled to said first output of said logic gate, said third output being coupled to said second control electrode; a control transistor device having a fourth control electrode coupled to said second output of said first inverter and having a fifth current path being coupled between a power supply and said sense amplifier to selectively provide said power supply to said sense amplifier in response to a signal on said fourth control electrode, said signal on said fourth control electrode having one of two stable signal states after said power-up signal is momentarily pulsed being determined by the state of said floating gate.

Claim 13

A CMOS power reduction circuit as in claim 9 wherein said first and second inverters are CMOS inverters and wherein said logic gate is a CMOS logic gate.

Claim 14

A CMOS power reduction circuit as in claim 10 wherein when said floating gate is charged, said fifth current path of said control transistor device does not provide significant current to said sense amplifier, thereby reducing the power consumed by said sense amplifier.

Claim 15

A CMOS power reduction circuit as in claim 10 wherein when said floating gate is uncharged, said fifth current path of said control transistor device does not provide significant current to said sense amplifier, thereby reducing the power consumed by said sense amplifier.

Claim 16

A CMOS power reduction circuit as in claim 11 wherein said logic gate is a CMOS NAND gate.

Claim 17

A CMOS power reduction circuit as in claim 13 wherein said power supply that is coupled to said control transistor device is said second reference voltage and wherein said first reference voltage is ground.

Claim 18

A CMOS power reduction circuit as in claim 14 wherein said powerup signal, which momentarily pulsed when power is first supplied, is provided by a rising edge single shot pulse generator having an input and an output, said input being coupled to said second reference voltage and said output being coupled to said first control electrode.

Claim 19

A CMOS power reduction circuit as in claim 11 further comprising a fourth MOS field effect transistor having a fifth control electrode and having a sixth current path coupled between said product term and said first terminal of said nonvolatile programmable storage means to permit the state of the floating gate to be read through said product term when a signal is applied to said fifth control electrode.

Claim 20

A CMOS power reduction circuit as in claim 16 further comprising a fifth MOS field effect transistor having a seventh current path and having a sixth control electrode, said second and third current paths being coupled to said third terminal through said seventh current path, said sixth control electrode being coupled to a fourth reference voltage.

Claim 21

A CMOS power reduction circuit as in claim 17 wherein said control transistor device is a p-channel MOS field effect transistor.