High-power GTO thyristor and also a method for its manufacture

Claim 2

High-power GTO thyristor having a cathode and an anode, comprising: a layer sequence comprising an n-type emitter layer, a p-type base layer, an n-type base layer and a p-type emitter layer between the cathode and the anode in a semiconductor substrate; the p-type emitter layer being perforated by anode short-circuits, which anode short-circuits short-circuit the n-type base layer to the anode; wherein: a p - -type barrier layer is disposed at least inside a region carrying an on-state current between the anode short-circuits and the n-type base layer; said p - -type barrier layer has a doping concentration of less than 10 15 cm -3 .

Claim 3

High-power GTO thyristor having a cathode and an anode, comprising: a layer sequency comprising an n-type emitter layer, a p-type base layer, an n-type base layer and a p-type emitter layer between the cathode and the anode in a semiconductor substrate; the p-type emitter layer being perforated by anode short-circuits, which anode short-circuits short-circuit the n-type base layer to the anode; wherein: a p - -type barrier layer is disposed at least inside a region carrying an on-state current between the anode short-circuits and the n-type base layer; said p 31 -type barrier layer has a doping concentration of less than 10 15 cm 31 3 and a thickness of 7 μm or less.

Claim 4

High-power GTO thyristor having a cathode and an anode, comprising: a layer sequency comprising an n-type emitter layer, a p-type base layer, an n-type base layer and a p-type emitter layer between the cathode and the anode in a semiconductor substrate; the p-type emitter layer being perforated by anode short-circuits, which anode short-circuits short-circuit the n-type base layer to the anode; wherein: a p - -type barrier layer is disposed at least inside a region carrying an on-state current between the anode short-circuits and the n-type base layer; said p 31 -type barrier layer has a doping concentration of less than 10 15 cm 31 3 and a thickness of 7 μm or less.

Claim 5

The GTO thyristor as claimed in claim 2 wherein the p 31 -type barrier layer extends laterally over the entire area of the thyristor.

Claim 6

The GTO thyristor as claimed in claim 2, wherein the p-type barrier layer is restricted laterally to the region carrying the on-state current.

Claim 7

High-power GTO thyristor having a cathode and an anode, comprising: a layer sequence comprising an n-type emitter layer, a p-type base layer, an n-type base layer and a p-type emitter layer between the cathode and the anode in a semiconductor substrate; the p-type emitter layer being perforated by anode short-circuits, which anode short-circuits short-circuit the n-type base layer to the anode; wherein: a p - -type barrier layer is disposed at least inside the region carrying the on-state current between the anode short-circuits and the n-type base layer; said p- - -type barrier layer has a doping concentration of approximately 10 14 cm -3 or less and a thickness of 7μm or less.

Claim 8

High-power GTO thyristor having a cathode and an anode, comprising: a layer sequence comprising an n-type emitter layer, a p-type base layer, an n-type base layer and a p-type emitter layer between the cathode and the anode in a semiconductor substrate; the p-type emitter layer being perforated by anode short-circuits, which anode short-circuits short-circuit the n-type base layer to the anode; wherein: a p - -type barrier layer is disposed at least inside the region carrying the on-state current between the anode short-circuits and the n-type base layer; said p- - -type barrier layer has a doping concentration of approximately 10 14 cm -3 or less and a thickness of 7μm or less.