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US4959839A
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Rib waveguide type semiconductor laser
Assignee: Toshiba Corp
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Filing: 1989-07-24
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Granted: 1990-09-25
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Expires: 2009-07-24
Abstract
Abstract A rib waveguide type semiconductor laser including p-type high impurity concentration layer formed between a p-upper cladding layer and p-ohmic layer and having an impurity concentration higher than the impurity concentration of the p-upper cladding layer and p-ohmic layer. The high impurity concentration layer acts to make small a discontinous portion of the valence band between the p-upper cladding layer and p-ohmic layer and change the steep junction to a smoothly inclined junction, thereby lowering the voltage drop across the junction.
Inventors
- 👤 Motoyuki Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 09:05
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/85; H10H20/855; H01; H01S; H01S5/00; H01S5/04; H01S5/042; H01S5/0421; H10H20/81; H10H20/816; H10H20/8162; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
156 words
In a rib waveguide type semiconductor laser, the improvement comprising: a compound semiconductor substrate of a first conductivity type; a lower cladding layer of the first conductivity type formed on said semiconductor substrate; an active layer formed on said lower cladding layer; an upper cladding layer of a second conductivity type formed on said active layer and having a mesa portion formed in a stripe configuration to extend in a direction parallel to the main surface of said semiconductor substrate; an ohmic layer of the second conductivity type formed on said mesa portion of said upper cladding layer; a current inhibition layer of the first conductivity type formed on portion of said upper cladding layer other than said mesa portion; and a high impurity concentration layer of the second conductivity type formed between said upper cladding layer and said ohmic layer and having an impurity concentration higher than the upper cladding layer and said ohmic layer.
Claim 2
Dependent Claim
156 words
In a rib waveguide type semiconductor laser, the improvement comprising: a compound semiconductor substrate of a first conductivity type; a lower cladding layer of the first conductivity type formed on said semiconductor substrate; an active layer formed on said lower cladding layer; an upper cladding layer of a second conductivity type formed on said active layer and having a mesa portion formed in a stripe configuration to extend in a direction parallel to the main surface of said semiconductor substrate; an ohmic layer of the second conductivity type formed on said mesa portion of said upper cladding layer; a current inhibition layer of the first conductivity type formed on portion of said upper cladding layer other than said mesa portion; and a high impurity concentration layer of the second conductivity type formed between said upper cladding layer and said ohmic layer and having an impurity concentration higher than the upper cladding layer and said ohmic layer.
Claim 3
Dependent Claim
37 words
A rib waveguide type semiconductor laser according to claim 1, wherein the forbidden band width of said high impurity concentration layer is equal to the forbidden band width of said upper cladding layer and said ohmic layer.
Claim 4
Dependent Claim
37 words
A rib waveguide type semiconductor laser according to claim 1, wherein the forbidden band width of said high impurity concentration layer is set between the forbidden band widths of said upper cladding layer and said ohmic layer.
Claim 5
Dependent Claim
65 words
A rib waveguide type semiconductor laser according to claim 1, wherein said upper cladding layer and lower cladding layer each include In 1-x (Ga 1-y Al y ) x P, said active layer includes In 1-x (Ga 1-z Al z ) x P and said high impurity concentration layer includes In 1-x (Ga 1-r Al r ) x P, where y≧z and r, and 1≧y>0.
Claim 6
Dependent Claim
59 words
A rib waveguide type semiconductor laser according to claim 1, wherein said upper cladding layer and lower cladding layer each include In 1-x (Ga 1-y Al y ) x P where 1≧y>0, said active layer includes In 1-x (Ga 1-z Al z ) x P where y≧z and said high impurity concentration layer includes Ga.sub.(1-s) Al.sub.(s) As where 0.8≧s≧0.
Claim 7
Dependent Claim
70 words
A rib waveguide type semiconductor laser according to claim 1, wherein said upper cladding layer and lower cladding layer each include In 1-x (Ga 1-y Al y ) x P where 1≧y>0, said active layer includes In 1-x (Ga 1-z Al z ) x P where y≧z and said high impurity concentration layer includes In 1-x (Ga 1-m Al m ) x (P 1-n As n ) where 1.0≧m≧0, 1.0≧n≧0.
Claim 8
Dependent Claim
29 words
A rib waveguide type semiconductor laser according to claim 1, wherein the impurity concentration of said high impurity concentration layer is not less than 5×10 18 cm -3 .
Claim 9
Dependent Claim
30 words
A rib waveguide type semiconductor laser according to claim 7, wherein the impurity contained in said high impurity concentration layer is selected from a group consisting of zinc and magnesium.
Claim 10
Dependent Claim
63 words
A rib waveguide type semiconductor laser according to claim 1, wherein said upper cladding layer and lower cladding layer each include p-In 0 .49 (Ga 0 .3 Al 0 .7) 0 .51 P, said active layer includes In 0 .49 Ga 0 .51 P and said high impurity concentration layer includes p-In 0 .49 (Ga 0 .8 Al 0 .2) 0 .51 P.
Claim 11
Dependent Claim
58 words
A rib waveguide type semiconductor laser according to claim 1, wherein said upper cladding layer and lower cladding layer each include p-In 0 .49 (Ga 0 .3 Al 0 .7) 0 .51 P, said active layer includes In 0 .49 Ga 0 .51 P and said high impurity concentration layer includes p-Ga 0 .6 Al 0 .4 As.
Claim 12
Dependent Claim
68 words
A rib waveguide type semiconductor laser according to claim 1, wherein said upper cladding layer and lower cladding layer each include p-In 0 .49 (Ga 0 .3 Al 0 .7) 0 .51 P, said active layer includes In 0 .49 Ga 0 .51 P and said high impurity concentration layer includes p-In 0 .49 (Ga 0 .8 Al 0 .2) 0 .51 (P 0 .95 As 0 .05).
References Cited (Backward Citations)
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