US4845724A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device having optical guilding layers of unequal resistance
Assignee: Sharp Corp
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Filing: 1987-12-22
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Granted: 1989-07-04
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Expires: 2007-12-22
Abstract
Abstract A semiconductor laser device comprising a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching the active layer therebetween, a striped structure in which current injected into the laser device is confined, the striped structure being constituted by a part of the double-heterostructure, and optical guiding layers positioned between one cladding layer and the active layer and between the active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
Inventors
- 👤 Toshiro Hayakawa
- 👤 Takahiro Suyama
- 👤 Kosei Takahashi
- 👤 Masafumi Kondo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:20
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2054; H01S5/2081; H01S5/2237; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32316
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
106 words
In a semiconductor laser device, the device comprising: a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching said active layer therebetween, a striped structure in which current injected into said laser device is confined, said striped structure being constituted by a part of said double-heterostructure, and optical guiding layers positioned between one cladding layer and said active layer and between said active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
Claim 2
Dependent Claim
106 words
In a semiconductor laser device, the device comprising: a double-heterostructure that is composed of an active layer and a pair of cladding layers sandwiching said active layer therebetween, a striped structure in which current injected into said laser device is confined, said striped structure being constituted by a part of said double-heterostructure, and optical guiding layers positioned between one cladding layer and said active layer and between said active layer and the other cladding layer, wherein the resistance of one optical guiding layer positioned at the striped structure side is higher than that of the other optical guiding layer positioned opposite to the striped structure side.
Claim 3
Dependent Claim
17 words
A semiconductor laser device according to claim 1, wherein said striped structure is formed into a mesa.
Claim 4
Dependent Claim
17 words
A semiconductor laser device according to claim 1, wherein said striped structure is formed into a ridge.
Claim 5
Dependent Claim
35 words
A semiconductor laser device according to claim 1, wherein the thickness of a portion of the cladding layer outside of the striped structure, which is positioned at the striped structure, is 500 Å or less.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-07-03 | 1993-01-02 | 1993-07-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-07-03 | 1997-01-02 | 1997-07-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-07-03 | 2001-01-02 | 2001-07-04 | $7700.00 | Window Closed / Lapsed |