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US4959136A
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Method for making an amorphous aluminum-nitrogen alloy layer
Assignee: Eastman Kodak Co
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Filing: 1987-06-29
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Granted: 1990-09-25
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Expires: 2007-06-29
Abstract
Abstract Disclosed herein is a method for producing an amorphous aluminum nitride layer having a desired stoichiometry. Such method involves the steps of disposing a substrate in close proximity to an aluminum target in a low pressure atmosphere of nitrogen and an inert gas, and reactive sputtering an aluminum nitride layer onto the substrate at a certain minimum deposition rate while maintaining certain parameters (i.e. nitrogen-to-inert gas ratio, substrate temperature, sputtering power, nitrogen flow rate and sputtering pressure) within certain limits.
Inventors
- 👤 Tukaram K. Hatwar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 14:00
CPC Classifications
G; G11; G11B; G11B11/00; G11B11/10; G11B11/105; G11B11/10582; G11B11/10586; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/06; C23C14/0641; G02; G02F; G02F1/00; G02F1/0009; G02F1/0036; G11B11/10589; G11B5/00; G11B5/62; G11B5/72; G11B5/726; G11B5/84; G11B5/851
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
116 words
A method for producing an amorphous layer of an aluminum nitrogen alloy on a substrate, said method comprising the steps of: (a) disposing said substrate in close proximity to an aluminum target in a low pressure atmosphere of nitrogen and an inert gas; (b) reactive sputtering an aluminum nitrogen alloy onto said substrate at a rate exceeding 15 nanometers/min. while maintaining (i) the nitrogen to inert gas ratio between about 30 and 50%, (ii) the substrate temperature at less than about 80° C., (iii) the sputtering power between about 600 and 1000 Watts, (iv) the nitrogen flow rate between about 3 and 6 sccm, and (v) the total sputtering pressure between about 1 and 15 mTorr.
Claim 2
Independent Claim
116 words
A method for producing an amorphous layer of an aluminum nitrogen alloy on a substrate, said method comprising the steps of: (a) disposing said substrate in close proximity to an aluminum target in a low pressure atmosphere of nitrogen and an inert gas; (b) reactive sputtering an aluminum nitrogen alloy onto said substrate at a rate exceeding 15 nanometers/min. while maintaining (i) the nitrogen to inert gas ratio between about 30 and 50%, (ii) the substrate temperature at less than about 80° C., (iii) the sputtering power between about 600 and 1000 Watts, (iv) the nitrogen flow rate between about 3 and 6 sccm, and (v) the total sputtering pressure between about 1 and 15 mTorr.
Claim 3
Dependent Claim
48 words
The method according to claim 1 herein the nitrogen to inert gas ratio is maintained at about 50%, the substrate temperature is maintained at about 75° C., the nitrogen flow rate is maintained at about 3 sccm, and the total sputtering pressure is maintained at about 5 mTorr.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-24 | 1994-03-26 | 1994-09-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-24 | 1998-03-26 | 1998-09-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-24 | 2002-03-26 | 2002-09-25 | $7700.00 | Window Closed / Lapsed |