US4384933A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of reactive sputtering
Assignee: Fujitsu Ltd
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Filing: 1981-06-22
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Granted: 1983-05-24
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Expires: 2001-06-22
Abstract
Abstract A method of reactive sputtering wherein inert gas and reactive gas are introduced into a reaction chamber provided with a pair of oppositely arranged electrodes, on one of which is placed a semiconductor substrate to be treated and a target material is placed on the other electrode, an RF power is applied to the latter electrode to generate plasma which activates the inert gas to eject silicon particles from the target material for reaction with nitrogen radical for forming a film of silicon nitride on the substrate, the invention improves the quality of the film as well as its growth rate by activating reactive gas before it is introduced into the reaction chamber. A microwave oscillator is used for activating the reactive gas, and the electrode on which the target material is placed comprises a magnetron.
Inventors
- 👤 Kanetake Takasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 04:35
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; C23C14/0047
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
130 words
A method of reactive sputtering in an apparatus having a pair of electrodes arranged opposing one another in a reaction chamber, said method comprising the steps of: (a) positioning a substrate on one electrode and a target material on the opposing electrode in the reaction chamber; (b) introducing into the reaction chamber an inactive gas; (c) activating a reactive gas and introducing the same into the reaction chamber; (d) exciting the inactive gas by applying a high frequency power across the electrodes; (e) activating the target material by the excited inactive gas causing particles to be emitted from the target material; (f) forming on the surface of the substrate a product of reaction, by the reaction of the particles emitted from the target material and the excited activated reactive gas.
Claim 2
Independent Claim
130 words
A method of reactive sputtering in an apparatus having a pair of electrodes arranged opposing one another in a reaction chamber, said method comprising the steps of: (a) positioning a substrate on one electrode and a target material on the opposing electrode in the reaction chamber; (b) introducing into the reaction chamber an inactive gas; (c) activating a reactive gas and introducing the same into the reaction chamber; (d) exciting the inactive gas by applying a high frequency power across the electrodes; (e) activating the target material by the excited inactive gas causing particles to be emitted from the target material; (f) forming on the surface of the substrate a product of reaction, by the reaction of the particles emitted from the target material and the excited activated reactive gas.
Claim 3
Dependent Claim
22 words
A method of claim 1 which is characterized in that said reactive gas is nitrogen gas and said target material is silicon.
Claim 4
Dependent Claim
50 words
A method of claim 1, wherein said reactive gas is selected from a group comprising oxygen (O 2 ), nitric monoxide (NO), nitrous oxide (N 2 O) or mixture of some of these, and said target material is selected from a group comprising aluminum (Al), titanium (Ti) and tantalum (Ta).
Claim 5
Independent Claim
96 words
An apparatus for carrying out processes of reactive sputtering which comprises: a reaction chamber including a pair of electrodes opposing one another for respectively supporting a material to be treated and a target material; a vacuum pump system operatively connected to said reaction chamber; a high frequency power source operatively connected to at least one of said electrodes; a first inlet in said reaction chamber for an inactive gas; a second inlet in said reactive chamber for receiving activated reactive gas; a plasma generator operatively connected to said second inlet for producing the activated reactive gas.
Claim 6
Independent Claim
96 words
An apparatus for carrying out processes of reactive sputtering which comprises: a reaction chamber including a pair of electrodes opposing one another for respectively supporting a material to be treated and a target material; a vacuum pump system operatively connected to said reaction chamber; a high frequency power source operatively connected to at least one of said electrodes; a first inlet in said reaction chamber for an inactive gas; a second inlet in said reactive chamber for receiving activated reactive gas; a plasma generator operatively connected to said second inlet for producing the activated reactive gas.
Claim 7
Dependent Claim
22 words
An apparatus of claim 4 which is characterized in that said electrode on which said target material is placed comprises a magnetron.
Claim 8
Dependent Claim
17 words
An apparatus of claim 4 which is characterized in that said plasma generator comprises a microwave oscillator.
Claim 9
Dependent Claim
12 words
A method according to claim 1, wherein the inactive gas comprises Argon.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-23 | 1986-11-22 | 1987-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-23 | 1990-11-22 | 1991-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-23 | 1994-11-22 | 1995-05-24 | $7700.00 | Window Closed / Lapsed |