US4957880A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor device including a refractory metal pattern
Assignee: Toshiba Corp
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Filing: 1989-04-28
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Granted: 1990-09-18
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Expires: 2009-04-28
Abstract
Abstract In the production method of a semiconductor device, a connection layer is formed on an insulating layer according to two steps of irradiating, in the atmosphere of a reaction gas, a region in which the connection layer is to be formed selectively by light having a wavelength in a range of from 200 to 1000 nm, and depositing selectively a connection layer forming substrate by a CVD method in the light irradiated region until a desired thickness of the substance is obtained.
Inventors
- 👤 Hitoshi Itoh
- 👤 Takahiko Moriya
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 14:02
CPC Classifications
H; H10; H10P; H10P34/00; H10P34/40; H10P34/42; H10P14/00; H10P14/40; H10P14/412; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057; Y; Y10; Y10S; Y10S148/00; Y10S148/071; Y10S148/09
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
94 words
A method of forming a refractory metal pattern selectively on an insulating layer on a substrate comprising the steps of: irradiating, in a hydrogen gas free atmosphere comprising a refractory metal halide gas, on a region of said insulating layer selectively by light having a wavelength in a range of from about 200 to about 1000 nm, and depositing the refractory metal pattern selectively on said light-irradiated region of said insulating layer by a chemical vapor deposition (CVD) method without irradiation using a gas mixture comprising the refractory metal halide gas and hydrogen gas.
Claim 2
Independent Claim
94 words
A method of forming a refractory metal pattern selectively on an insulating layer on a substrate comprising the steps of: irradiating, in a hydrogen gas free atmosphere comprising a refractory metal halide gas, on a region of said insulating layer selectively by light having a wavelength in a range of from about 200 to about 1000 nm, and depositing the refractory metal pattern selectively on said light-irradiated region of said insulating layer by a chemical vapor deposition (CVD) method without irradiation using a gas mixture comprising the refractory metal halide gas and hydrogen gas.
Claim 3
Dependent Claim
25 words
The method according to claim 1, wherein said insulating layer is a silicon dioxide film, and said refractory metal pattern is a tungsten film pattern.
Claim 4
Dependent Claim
17 words
The met hold according to claim 1, wherein said CVD method is a reduced pressure CVD method.
Claim 5
Independent Claim
121 words
A method of forming a refractory metal pattern onto a substrate surface partially covered with an insulating layer, said pattern being formed on said insulating layer and extending onto an exposed surface of the substrate surface which is not covered with said insulating layer, comprising the steps of: irradiating, in a hydrogen gas free atmosphere comprising a refractory metal halide gas, on a region of said insulating layer selectively by light having a wavelength in a range of from about 200 to about 1,000 nm, and depositing the refractory metal pattern selectively on said light-irradiated region of said insulating layer by a chemical vapor deposition (CVD) method without irradiation using a gas mixture comprising the refractory-metal halide gas and hydrogen gas.
Claim 6
Independent Claim
121 words
A method of forming a refractory metal pattern onto a substrate surface partially covered with an insulating layer, said pattern being formed on said insulating layer and extending onto an exposed surface of the substrate surface which is not covered with said insulating layer, comprising the steps of: irradiating, in a hydrogen gas free atmosphere comprising a refractory metal halide gas, on a region of said insulating layer selectively by light having a wavelength in a range of from about 200 to about 1,000 nm, and depositing the refractory metal pattern selectively on said light-irradiated region of said insulating layer by a chemical vapor deposition (CVD) method without irradiation using a gas mixture comprising the refractory-metal halide gas and hydrogen gas.
Claim 7
Dependent Claim
43 words
The method according to claim 4, further including forming said refractory metal pattern onto an exposed surface of the substrate surface which is not covered with said insulating layer, said exposed surface being a surface of a diffused layer formed in said substrate.
Claim 8
Dependent Claim
46 words
The method according to claim 4, further including forming said refractory metal pattern onto an exposed surface of the substrate surface which is not covered with said insulating layer, said exposed surface being a surface of a conductive layer with which said insulating layer is underlaid.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-17 | 1994-03-19 | 1994-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-17 | 1998-03-19 | 1998-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-17 | 2002-03-19 | 2002-09-18 | $7700.00 | Window Closed / Lapsed |