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Patent US4956698A successfully refreshed from Google Patents.
US4956698A
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Group III-V compound semiconductor device having p-region formed by Be and Group V ions
Assignee: United States Department of Commerce
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Filing: 1988-11-30
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Granted: 1990-09-11
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Expires: 2008-11-30
Abstract
Abstract Implantation of a Group V ion species (e.g., phosphorus or arsenic) into an In-based Group III-V compound semiconductor (e.g., InP, InGaAs) followed by implantation of Be ions produces a shallow p-type surface layer and avoids significant in-diffusion of the dopant species. High carrier concentrations and activation efficiences are attained. The technique has application in the fabrication of FETs, APDs and ohmic contacts.
Inventors
- 👤 Kou-Wei Wang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:53
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P30/218
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
55 words
A semiconductor device comprising a first region of a Group III-V compound semiconductor, and a p-type region formed in said first region by Be ions and a Group V ion species other than the Group V species of said compound, wherein said first region comprises InP, and said Group V ion species comprises As ions.
Claim 2
Dependent Claim
55 words
A semiconductor device comprising a first region of a Group III-V compound semiconductor, and a p-type region formed in said first region by Be ions and a Group V ion species other than the Group V species of said compound, wherein said first region comprises InP, and said Group V ion species comprises As ions.
Claim 3
Dependent Claim
23 words
The device of claim 1 wherein said first region is n-type and said p-type region forms a p-n junction in said first region.
Claim 4
Dependent Claim
19 words
The device of claim 1 wherein said first region is p-type and said p-type region forms a contact-facilitating layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-09-10 | 1994-03-12 | 1994-09-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-09-10 | 1998-03-12 | 1998-09-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-09-10 | 2002-03-12 | 2002-09-11 | $7700.00 | Window Closed / Lapsed |