Isolation of p-n junctions

Claim 2

A semiconductor structure including means for isolating discrete portions thereof comprises: semi-insulating substrate; a plurality of stacked layers overlying each other with the innermost layer thereof overlying said semi-insulating substrate, and the outermost layer doped with a first select species of dopant; and at least one first predetermined region comprising a dopant species of the same dopant type as that of the outermost layer of said stacked layers diffused therein at least to the depth of said semi-insulating substrate; and a second predetermined region ion implanted to a depth which is at least as deep as the outermost layer of said stacked layers which is doped with a dopant opposite from said first select species of dopant to render the second predetermined region substantially non-conductive, said first and second regions having common portions with respect to each other, and collectively defining at least one isolating barrier between the discrete portions of said semiconductor structure.

Claim 3

The isolation structure of claim 1 wherein the p-n junction is formed in a GaAs--AlGaAs system wherein the innermost layer of the p-n junction is n-type and the outermost layer is p-type and the diffused dopant species is zinc or cadmium.

Claim 4

The semiconductor structure of claim 2 wherein the ion implanted in the second predetermined region is hydrogen.

Claim 5

The semiconductor structure of claim 1 wherein the p-n junction is formed in a GaAs--AlGaAs system wherein the innermost layer of the p-n junction is p-type and the outermost layer is n-type and the diffused dopant species is silicon or sulfer.

Claim 6

The semiconductor structure of claim 4 wherein the ion implanted in the second predetermined region is hydrogen.

Claim 7

The semiconductor structure of claim 2 wherein the ion implanted in the second predetermined region is oxygen.

Claim 8

The semiconductor structure of claim 2, wherein the ion implanted in the second predetermined region is boron.

Claim 9

The semiconductor structure of claim 1, wherein the p-n junction is formed in system comprised of III-V semiconductor compounds wherein the innermost layer of the p-n junction is n-type and the outermost layer is p-type and the diffused dopant species is zinc or cadmium.

Claim 10

The semiconductor structure of claim 8 wherein the ion implanted in the second predetermined region is hydrogen or oxygen.

Claim 11

An LED array which comprises: a semi-insulating substrate; an n-type doped conduction layer epitaxially grown on said semi-insulating substrate; an n-type confinement layer epitaxially grown on said conduction layer; an active layer epitaxially grown on said n-type confinement layer; a p-type doped confinement layer epitaxially grown on said active layer; a heavily p-type doped cap layer epitaxially grown on the p-type confinement layer; at least one first predetermined region comprising a p-type dopant species diffused therein at least to the depth of the semi-insulating substrate; and a second predetermined region ion implanted to at least the top of the n-type confinement layer to render the second predetermined region substantially non-conductive, said first and second regions having common portions with respect to each other, and collectively defining at least one isolation barrier between LED's.

Claim 12

An LED array which comprises: a semi-insulating substrate; an n-type doped conduction layer epitaxially grown on said semi-insulating substrate; an n-type confinement layer epitaxially grown on said conduction layer; an active layer epitaxially grown on said n-type confinement layer; a p-type doped confinement layer epitaxially grown on said active layer; a heavily p-type doped cap layer epitaxially grown on the p-type confinement layer; at least one first predetermined region comprising a p-type dopant species diffused therein at least to the depth of the semi-insulating substrate; and a second predetermined region ion implanted to at least the top of the n-type confinement layer to render the second predetermined region substantially non-conductive, said first and second regions having common portions with respect to each other, and collectively defining at least one isolation barrier between LED's.

Claim 13

A light-emitting diode array structure comprising: semi-insulating substrate; a conduction layer epitaxially grown on said semi-insulating substrate and doped with a select dopant species; at least one group of overlying layers comprising a first epitaxially grown confinement layer overlying said conduction layer, an epitaxially grown active layer overlying said first confinement layer, and a second epitaxially grown confinement layer overlying said active layer; an epitaxially grown cap layer overlying said group of layers and heavily doped with a dopant species of the opposite dopant type as that of the conduction layer; and at least one first predetermined region comprising a dopant species of the opposite dopant type as that of the conductive layer diffused therein at least to the depth of the semi-insulating substrate and a second predetermined region ion implanted to a depth which is at least to the top of said active layer as to render the second predetermined regions substantially non-conductive, said first and second regions having common portions with respect to each other and collectively defining at least one isolation barrier between individual light emitting diodes of said array.

Claim 14

A light-emitting diode array structure comprising: semi-insulating substrate; a conduction layer epitaxially grown on said semi-insulating substrate and doped with a select dopant species; at least one group of overlying layers comprising a first epitaxially grown confinement layer overlying said conduction layer, an epitaxially grown active layer overlying said first confinement layer, and a second epitaxially grown confinement layer overlying said active layer; an epitaxially grown cap layer overlying said group of layers and heavily doped with a dopant species of the opposite dopant type as that of the conduction layer; and at least one first predetermined region comprising a dopant species of the opposite dopant type as that of the conductive layer diffused therein at least to the depth of the semi-insulating substrate and a second predetermined region ion implanted to a depth which is at least to the top of said active layer as to render the second predetermined regions substantially non-conductive, said first and second regions having common portions with respect to each other and collectively defining at least one isolation barrier between individual light emitting diodes of said array.

Claim 15

The diode structure of claim 11, comprising a select plurality of said groups of layer wherein: each group overlies each other in stacked relationship from the bottom group directly overlying said conduction layer to the top group directly underlying said cap layer and the active layer of each group has a bandgap greater than all the underlying active layers of said groups so that select portions of each of said groups define a differently colored LED; said second predetermined regions being located to define select non-conducting portions between said select LED defining portions of said groups.

Claim 16

The diode structure of claim 12 comprising at least two of said select pluralities of said groups of layers wherein said first predetermined regions including said select common portions with said second predetermined regions are located to define non-conducting portions between each of said plurality of said groups.

Claim 17

The diode structure of claim 13 wherein the dopant species of said conduction layer is n-type/ and the conduction species of said cap layer is p-type.