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US4952788A
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Method of photoelectric detection with reduction of remanence of a phototransistor, notably of the NIPIN type
Assignee: Thales SA
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Filing: 1989-10-06
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Granted: 1990-08-28
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Expires: 2009-10-06
Abstract
Abstract The disclosure concerns photosensitive matrices, and especially those using NIPIN or PINIP type phototransistors made of amorphous silicon. To prevent problems of remanence, due to the collecting of holes in the base after an illumination stage, it is proposed to follow the step for reading the illumination signal by a remanence erasure step in which the phototransistor is made conductive in forward or reverse bias, so as to inject, into the base, electrons which will eliminate the holes by recombination. Switching on by reverse bias proves to be more efficient than switiching on by forward bias. The invention is applicable notably to a matrix structure of rows and columns of photosensitive sites in which each site is formed by a NIPIN transistor made of amorphous silicon in series with a reading diode that may be put into reverse conduction.
Inventors
- 👤 Jean L. Berger
- 👤 Marc Arques
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 09:00
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/60; H04N25/62; H04N25/626; H04N25/70; H04N25/76; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; H10F39/197; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
105 words
A method of photoelectric detection wherein there is used, as a detection element, a phototransistor connected between a first electrode and a floating node, with a switch-over element connected between the floating node and a second electrode, the method including a detection step in which the phototransistor is biased in non-conductive mode and photoelectric charges generated in the phototransistor are stored at the floating node, and a reading step during which the switch-over element is made conductive and the stored charges are removed, a method wherein, after the reading step, a step is executed for the erasure of remanence, consisting in turning the phototransistor on.
Claim 2
Independent Claim
105 words
A method of photoelectric detection wherein there is used, as a detection element, a phototransistor connected between a first electrode and a floating node, with a switch-over element connected between the floating node and a second electrode, the method including a detection step in which the phototransistor is biased in non-conductive mode and photoelectric charges generated in the phototransistor are stored at the floating node, and a reading step during which the switch-over element is made conductive and the stored charges are removed, a method wherein, after the reading step, a step is executed for the erasure of remanence, consisting in turning the phototransistor on.
Claim 3
Dependent Claim
40 words
A method according to claim 1, wherein the phototransistor is a non-connected base transistor, and its being made conductive during the remanence erasure step is achieved by the application of a high voltage pulse between the collector and the emitter.
Claim 4
Dependent Claim
23 words
A method according to claim 2, wherein the voltage pulse is applied in forward bias, injecting charges from the emitter to the base.
Claim 5
Dependent Claim
38 words
A method according to claim 2, wherein the voltage pulse is applied in reverse bias, injecting charges from the collector to the base, the bias being high enough to make the transistor go beyond a reverse conduction threshold.
Claim 6
Dependent Claim
28 words
A method according to claim 4, wherein the reverse bias voltage during the erasure of the remanence is close to the reverse conduction threshold voltage of the phototransistor.
Claim 7
Dependent Claim
23 words
A method according to claim 1, wherein the phototransistor is a PINIP or NIPIN phototransistor made of amorphous silicon with five superimposed layers.
Claim 8
Independent Claim
165 words
A method for the erasure of the remanence of a photosensitive matrix, each photosensitive dot of which comprises a phototransistor as a photosensitive element and a reading diode, placed in series with the latter between a row conductor and a column conductor of the matrix, the reading diode and the phototransistor being capable of being placed in reverse conduction, wherein: first of all, an idle voltage level is applied to the row conductor during a stage of integration of charges due to the illumination; then a voltage pulse, called a reading pulse, is applied, said reading pulse having a first sign with respect to the idle level; then a voltage pulse of the opposite sign is applied, this voltage pulse being called a remanence erasure pulse, the potential difference between the level of this pulse and the potential of the column conductor being greater in terms of absolute value than the sum of the reverse conduction thresholds of the phototransistor and of the reading diode.
Claim 9
Independent Claim
165 words
A method for the erasure of the remanence of a photosensitive matrix, each photosensitive dot of which comprises a phototransistor as a photosensitive element and a reading diode, placed in series with the latter between a row conductor and a column conductor of the matrix, the reading diode and the phototransistor being capable of being placed in reverse conduction, wherein: first of all, an idle voltage level is applied to the row conductor during a stage of integration of charges due to the illumination; then a voltage pulse, called a reading pulse, is applied, said reading pulse having a first sign with respect to the idle level; then a voltage pulse of the opposite sign is applied, this voltage pulse being called a remanence erasure pulse, the potential difference between the level of this pulse and the potential of the column conductor being greater in terms of absolute value than the sum of the reverse conduction thresholds of the phototransistor and of the reading diode.
Claim 10
Dependent Claim
42 words
A method according to claim 7, wherein the potential difference between the level of the erasure pulse and the potential of the column conductor is close to the sum of the reverse conduction thresholds of the reading diode and of the phototransistor.
Claim 11
Dependent Claim
31 words
A method according to claim 7, wherein the erasure pulse is followed by a resetting pulse, with an amplitude that is sufficient to place the reading diode again under forward conduction.
Claim 12
Dependent Claim
53 words
A method according to claim 7, wherein the reading pulses are applied successively to the different rows of the matrix, and wherein the remanence erasure pulses are applied simultaneously for all the rows, a time interval being planned between the end of the reading pulse and the start of the remanence erasure pulse.
Claim 13
Dependent Claim
38 words
A method according to claim 7, 10, wherein the reading diode is made in the form of a non-connected base transistor of the NIPIN or PINIP type, placed in series and in the same direction as the phototransistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-27 | 1994-02-26 | 1994-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-27 | 1998-02-26 | 1998-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-27 | 2002-02-26 | 2002-08-28 | $7700.00 | Window Closed / Lapsed |