Abstract The present invention concerns an analysis process of a line transfer photosensitive device. The charge-signal and the charge noise transfers from the columns towards the memory have the same duration and are made by using a same training charge, stored in memory, that must be at least sufficient to allow to pass in high inversion at the beginning of the transfer from the columns towards the memory. The transfers of the charge-signal and the charge-noise from the memory towards the read-out register or the drain have the same duration and are made by using training charges at least sufficient to allow to pass in high inversion at the beginning of the transfer. These training charges are read with the charge-signal or collected with the charge-noise.
A line transfer photosensitive device comprising a photosensitive zone of M lines of N photosensitive points, the photosensitive points of the different lines being connected in parallel by conducting columns to a memory that ensures the transfer towards a read-out register of the charge-signal (QS) of a single line and which ensures the transfer towards a drain of the charge-noise (QB) present on the columns prior to the intake of the charge-signal, wherein the line memory (4) comprises a series of intermediary capacitances (C1), each capacitance being connected on either side of the columns to switchover means leading the contents of the intermediary capacitances either towards the drain or towards the read-out register.
Claim 2
Dependent Claim
113 words
A line transfer photosensitive device comprising a photosensitive zone of M lines of N photosensitive points, the photosensitive points of the different lines being connected in parallel by conducting columns to a memory that ensures the transfer towards a read-out register of the charge-signal (QS) of a single line and which ensures the transfer towards a drain of the charge-noise (QB) present on the columns prior to the intake of the charge-signal, wherein the line memory (4) comprises a series of intermediary capacitances (C1), each capacitance being connected on either side of the columns to switchover means leading the contents of the intermediary capacitances either towards the drain or towards the read-out register.
Claim 3
Dependent Claim
70 words
Device according to claim 1, wherein the line memory (4) is a double stage memory of which the switchover means comprise a series of capacitances (C2), the access to each capacitance (C2) being controlled by three gates, namely a gate (G0) between the corresponding intermediary capacitances (C1) and capacitance (C2), a gate (R) between the drain and capacity (C2) and a gate (C) between the read-out register (3) and capacitance.