Nibble-mode dram solid state storage device

Claim 1

A nibble-mode solid state storage device, comprising: a system clock; one or more memory sections; a plurality of memory groups within each said section; port means for each said section, said port means for carrying parallel read and write data words out of and into said memory groups within each section; a plurality of memory ranks within each said group; each said rank including at least one nibble-mode DRAM bank, each siad DRAM bank including a plurality of DRAM semiconductors each including storage cells and responsive to a column address strobe signal to retrieve and store data in said cells; and assembly register for each said plurality of ranks, said register having a segment corresponding to each of said ranks, said segments connected to form a data pipeline into said group, each said segment providing at least one storage location for a word of data, said assembly register connected to receive data words from said port means; a write data register connected to said assembly register including a segment corresponding to each of said ranks, each said segment providing a storage location corresponding to a storage location in said assembly register; means for connecting said write data register to said DRAM banks in said ranks; a read data register for each said plurality of ranks, said read data register including a data storage segment corresponding to each of said ranks, each said segment providing at least one data storage location for a word of data, said segments connected to form a data pipeline out of said group, said segments including a parallel load input to receive read data words from said banks, a serial load input to receive read data words from a prior segment in the pipeline and a serial output to output read data words to the next segment in the pipeline; means for connecting said segments of said read data register to receive data at said parallel load input from said DRAM banks in said ranks and to convey a serial stream of read data words to said port means; and control and memory address means for controlling the transfer of data into said groups to be stored in said DRAM banks in a write cycle, and the transfer of data from said DRAM banks out of said groups in a read cycle, (a) said control means active in said write cycle (i) to pipeline load said assembly register with a set of write data words received from said port means, said write data words loaded in synchrony with said system clock, (ii) to transfer said set from said assembly register to said write data register in parallel, (iii) to cycle said column address strobe signal after said set is loaded in said write data register so that said set is transferred to said storage cells in said DRAM banks, and (iv) to pipeline load said assembly register with another set of write data words while the words in said write data register are transferred to and stored in the DRAM banks, and (b) said control means active in a read cycle (i) to cycle said column address signal to retrieve a set of read data words from the storage cells of said DRAM banks, (ii) to parallel load said read data register from said banks with a set of read data words, said parallel load occurring through said parallel load input, (iii) to unload said set from said read data register in a pipeline fashion so that read data words are output to said port means in a serial stream, the read data words in said set being pipeline transferred from said serial data outputs to corresponding serial data inputs in synchrony with sad system clock, and (iv) to cycle said column address strobe signal again so that another set of words are retrieved from said storage cells while said read data words are pipeline unloaded from said read data register.