Integrated structure with active and passive components enclosed in insulating pockets and operating at higher than the breakdown voltage between each component and the pocket containing it

Claim 1

An integrated circuit structure formed by a plurality of circuit components each of which is included in an insulated pocket defined within a respective surrounding doped insulating band formed in an oppositely-doped semiconductor substrate biassed with a substrate voltage and has opposed ends biassed with respective higher and lower voltages, the arrangement being such as to define a first breakdown voltage between each insulating band and the substrate and a second breakdown voltage between the same insulating band and the circuit component contained therein, the first breakdown voltage being much higher than the second breakdown voltage, wherein each insulating band is biassed with a band voltage provided by the respective component and comprised between said higher and lower voltages of the respective component, said band voltage differing from said higher voltage by a value greater than the difference between said higher voltage and the substrate voltage.