US4946802A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor laser device fabricating method
Assignee: Mitsubishi Electric Corp
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Filing: 1988-11-18
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Granted: 1990-08-07
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Expires: 2008-11-18
Abstract
Abstract A high-power AlGaAs/GaAs laser device comprises: a ridge formed on the top surface of a substrate from one end to the opposite end, thereof wherein the width of the ridge is made narrower in regions near both the ends and wider in a middle region; a depression is formed in the wider region of the ridge; a clad layer is grown epitaxially over the top surface of the substrate; and an active layer is grown epitaxially on the clad layer, wherein the thickness of the active layer is thinner in portions just above the narrower ridge regions and relatively thicker in a portion just above the wider ridge region.
Inventors
- 👤 Akihiro Shima
- 👤 Wataru Susaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:11
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/16; H01S5/1053; H01S5/1064; H01S5/20; H01S5/22; H01S5/2201; H01S5/223; H01S5/2232; H01S5/2234; H01S5/2235; Y; Y10; Y10S; Y10S148/00; Y10S148/095; Y10S148/11
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
142 words
A method for fabricating a semiconductor laser device, comprising the steps of: preparing a substrate; forming a ridge on a main surface of said substrate from one end to the opposite end, wherein width of said ridge is narrower in regions near both the ends and wider in a middle region; forming a depression in the wider region of said ridge; forming a narrow groove, narrower than said depression, along the surface of said ridge from said one end to said opposite end; forming a first clad layer over the main surface of said substrate; forming an active layer on said first clad layer, whereby thickness of said active layer is made thinner in portions just above said narrower ridge regions and made thicker in portion just above said wider ridge region; and forming a second clad layer on said active layer.
Claim 2
Independent Claim
142 words
A method for fabricating a semiconductor laser device, comprising the steps of: preparing a substrate; forming a ridge on a main surface of said substrate from one end to the opposite end, wherein width of said ridge is narrower in regions near both the ends and wider in a middle region; forming a depression in the wider region of said ridge; forming a narrow groove, narrower than said depression, along the surface of said ridge from said one end to said opposite end; forming a first clad layer over the main surface of said substrate; forming an active layer on said first clad layer, whereby thickness of said active layer is made thinner in portions just above said narrower ridge regions and made thicker in portion just above said wider ridge region; and forming a second clad layer on said active layer.
Claim 3
Dependent Claim
22 words
A method in accordance with claim 1, wherein said first clad layer and said active layer are grown by liquid phase epitaxy.
Claim 4
Dependent Claim
27 words
A method in accordance with claim 1 further comprising a step of forming a current-blocking layer which has a slit along the center axis of said ridge.
Claim 5
Dependent Claim
27 words
A method in accordance with claim 3, wherein said current-blocking layer is grown by liquid phase epitaxy and provided between said substrate and said first clad layer.
Claim 6
Dependent Claim
14 words
A method in accordance with claim 3, wherein said device of an A1GaAs/GaAs system.
Claim 7
Independent Claim
147 words
A method for fabricating a semiconductor laser device, comprising the steps of: preparing a substrate; forming a ridge on a main surface of said substrate from one end to the opposite end, wherein width of said ridge is narrower in regions near both the ends and wider in a middle region; forming a depression in the wider region of said ridge; forming a first clad layer over the main surface of said substrate; forming an active layer on said first clad layer, whereby thickness of said active layer is made thinner in portions just above said narrower ridge regions and made thicker in portion just above said wider ridge region; forming a second clad layer on said active layer; and forming a current-blocking layer which has a slit along the center axis of said ridge and wherein said current-blocking layer is provided on said second clad layer.
Claim 8
Independent Claim
147 words
A method for fabricating a semiconductor laser device, comprising the steps of: preparing a substrate; forming a ridge on a main surface of said substrate from one end to the opposite end, wherein width of said ridge is narrower in regions near both the ends and wider in a middle region; forming a depression in the wider region of said ridge; forming a first clad layer over the main surface of said substrate; forming an active layer on said first clad layer, whereby thickness of said active layer is made thinner in portions just above said narrower ridge regions and made thicker in portion just above said wider ridge region; forming a second clad layer on said active layer; and forming a current-blocking layer which has a slit along the center axis of said ridge and wherein said current-blocking layer is provided on said second clad layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-06 | 1994-02-05 | 1994-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-06 | 1998-02-05 | 1998-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-06 | 2002-02-05 | 2002-08-07 | $7700.00 | Window Closed / Lapsed |