High power single spatial mode semiconductor laser

Claim 2

In a high power single spatial mode semiconductor laser having a substrate, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of n-doped indium phosphide (n-InP); a layer of p-doped indium phosphide (p-InP); an active layaer of InGaAsP sandwiched between said layers of n-InP and p-InP to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of n-InP and p-InP joining together along a planar junction without said active layer, wherein, in the plane of said junction, said InGaAsP active layer has a narrow waveguide section which provides lateral mode stability and discrimination against high order transverse modes, and an amplifier section adjoining said waveguide section, said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greater than that of said waveguide section, and the sandwich of aid n-doped layer, said active layer, and said p-doped layer being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 3

The laser as recited in claim 1 wherein said high order transverse modes includes all transverse modes in excess of a single transverse mode.

Claim 4

The laser as recited in claim 1 wherein said narrow waveguide section has a width between 1 μm and 2 μm, and a length of from 20 μm to 100 μm; and said amplifier section has a width between 5 μm and 20 μm and a length of several hundred microns.

Claim 5

The laser as recited in claim 3 wherein said narrow waveguide section has a width of 1.5 μm.

Claim 6

The laser as recited in claim 3 wherein said active layer including said waveguide sectio adjoining said amplifier section further includes a rear facet formed on said amplifier section, distant from said waveguide section; a front facet formed on said waveguide section, distant from said amplifier section; a dielectric film coated on said rear facet to produce a reflectivity between 90% and 97%; and a dielectric film coated on said front facet to reduce front facet reflectivity to below 10%.

Claim 7

In a high power single spatial mode semiconductor laer having a substrate, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of n-doped indium phosphide (n-InP); a layer of p-doped indium phosphide (p-InP); and an active layer of InGaAsP sandwiched between said layers of n-InP and p-InP to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of n-InP and p-InP joining together along a planar junction without said active layer, wherein, in the plane of said junction, said InGaAsP active layer has a first narrow wavelength section for providing lateral mode stability and discrimination against high order transverse modes, said first section having a first end having a front facet formed thereon, and a second end; a second narrow waveguide section for providing lateral mode stability and discrimination against high order transverse modes, said second section having a first end having a rear facet formed thereon, and a second end; and an amplifier section, wider than said narrow waveguide sections, positioned between said second ends of said waveguide sections, said amplifier section having a length greater than that of said wavelength section, and the sandwich of said n-doped layer, said active layer and said p-doped layer being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 8

In a high power single spatial mode semiconductor laer having a substrate, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of n-doped indium phosphide (n-InP); a layer of p-doped indium phosphide (p-InP); and an active layer of InGaAsP sandwiched between said layers of n-InP and p-InP to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of n-InP and p-InP joining together along a planar junction without said active layer, wherein, in the plane of said junction, said InGaAsP active layer has a first narrow wavelength section for providing lateral mode stability and discrimination against high order transverse modes, said first section having a first end having a front facet formed thereon, and a second end; a second narrow waveguide section for providing lateral mode stability and discrimination against high order transverse modes, said second section having a first end having a rear facet formed thereon, and a second end; and an amplifier section, wider than said narrow waveguide sections, positioned between said second ends of said waveguide sections, said amplifier section having a length greater than that of said wavelength section, and the sandwich of said n-doped layer, said active layer and said p-doped layer being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 9

The laser as recited in claim 6 wherein said high order transverse modes includes all transverse modes in excess of a single transverse mode.

Claim 10

The laser as recited in calim 6 wherein each of said waveguide sections has a width between 1 μm and 2 μm, and a length of from 20 μm to 100 μm; and said amplifier section has a width from 5 μm to 20 μm and a length of several hundred microns.

Claim 11

The laser as recited in calim 6 wherein each of said waveguide sections has a width between 1 μm and 2 μm, and a length of from 20 μm to 100 μm; and said amplifier section has a width from 5 μm to 20 μm and a length of several hundred microns.

Claim 12

The laser as recited in claim 6 further comprising a dielectric film coated on said rear facet to produce a reflectivity between 90% and 97%; and a dielectric film coated on said front facet to reduce front facet reflectivity to below 10%.

Claim 13

In a high power single spatial mode semiconductor laser having a substrte, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of first semiconductor material with bandgap energy E 1 ; a layaer of p-doped second semiconductor material with bandgap energy E 2 ; and an active layer of a third semiconductor material with bandgap energy E 3 sandwiched between said layers of said first material and said second material to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of said first material and said second material joining together along a planar junction without said active layer, wherein, in the plane of said junction, said active layer has a narrow waveguide section which provides lateral mode stability and discrimination against high order transverse modes, and an amplifier section adjoining said waveguide section wherein E 3 <E 1 <E 2 , said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greter than that of said waveguide section, and the sandwich of said layer of said first material, said active layer, and said layer of second material being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 14

In a high power single spatial mode semiconductor laser having a substrte, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of first semiconductor material with bandgap energy E 1 ; a layaer of p-doped second semiconductor material with bandgap energy E 2 ; and an active layer of a third semiconductor material with bandgap energy E 3 sandwiched between said layers of said first material and said second material to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of said first material and said second material joining together along a planar junction without said active layer, wherein, in the plane of said junction, said active layer has a narrow waveguide section which provides lateral mode stability and discrimination against high order transverse modes, and an amplifier section adjoining said waveguide section wherein E 3 <E 1 <E 2 , said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greter than that of said waveguide section, and the sandwich of said layer of said first material, said active layer, and said layer of second material being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 15

The laser as recited in claim 10 wherein said high order transverse modes includes all transverse modes in excess of a single transverse mode.

Claim 16

The laser as recited in claim 10 wherein said narrow waveguide section has a width between 1 μm and 2 μm, and a length of from 20 μm to 100 μm; and said amplifier section has a width between 5 μm and 20 μm and a length of several hundred microns.

Claim 17

The laser as recited in claim 12 wherein said narrow waveguide section has a width of 1.5 μm.

Claim 18

The laser as recited in claim 12 wherein said active layer including said waveguide section adjoining said amplifier section further includes a rear facet formed on said amplifier section, distant from said waveguide section; a front facet formed on said waveguide section, distant from aid amplifier section; a dielectric film coated on said rear facet to produce a reflectivity between 90% and 97%; and a dielectric film coated on said front facet to reduce front facet reflectivity to below 10%.

Claim 19

In a high power single spatial mode semiconductor laser having a substrate, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of n-doped first semiconductor material with bandgap energy E 1 ; a layer of p-doped second semiconductor material with bandgap energy E 2 ; and an active layer of a third semiconductor material with bandgap energy E 3 sandwiched between said layers of said first material and said second material to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of said first material and said second material joining together along a planar junction without said active layer, wherein E 3 <E 1 and E 3 <E 2 and wherein, in the plane of said junction, said active layer has a first narrow waveguide section for providing lateral mode stability and discrimination against high order transverse modes, said first section having a first end having a front facet formed thereon, and a second end; a second narrow waveguide section for providing lateral mode stability and discriminantion against high order transverse modes, said second section having a first end having a rear facet formed thereon, and a second end; and an amplifier section positioned between said second ends of said waveguide sections, said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greater than that of said waveguide section, and the sandwich of said first material, said third material, and said second material being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 20

In a high power single spatial mode semiconductor laser having a substrate, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of n-doped first semiconductor material with bandgap energy E 1 ; a layer of p-doped second semiconductor material with bandgap energy E 2 ; and an active layer of a third semiconductor material with bandgap energy E 3 sandwiched between said layers of said first material and said second material to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of said first material and said second material joining together along a planar junction without said active layer, wherein E 3 <E 1 and E 3 <E 2 and wherein, in the plane of said junction, said active layer has a first narrow waveguide section for providing lateral mode stability and discrimination against high order transverse modes, said first section having a first end having a front facet formed thereon, and a second end; a second narrow waveguide section for providing lateral mode stability and discriminantion against high order transverse modes, said second section having a first end having a rear facet formed thereon, and a second end; and an amplifier section positioned between said second ends of said waveguide sections, said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greater than that of said waveguide section, and the sandwich of said first material, said third material, and said second material being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 21

The laser as recited in claim 15 wherein said high order transverse mode includes all transverse modes in excess of a single transverse mode.

Claim 22

The laser as recited in claim 15 wherein each of said waveguide sections has a width between 1 μm and 2 μm, and a length of from 20 μm to 100 μm; and said amplifier section has a width from 5 μm to 20 μm and a length of several hundred microns.

Claim 23

The laser as recited in claim 15 further comprising a dielectric film coated on said rear facet to produce a reflectivity between 90% and 97%; and a dielectric film coated on said front facet to reduce front facet refletivity to below 10%.

Claim 24

In a high power single spatial mode semiconductor laser having a substrate, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of n-doped Al x Ga 1-x As; a layer of p-doped Al y Ga 1-y As; and an active layer of Al z Ga 1-z As such that z<x and z<y sandwiched between said layers of n-Al x Ga 1-x As and p-Al y Ga 1-y As to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of n-Aq x Ga 1-x As and p-Al y Ga 1-y As joining together along a planar junction without said active layer, wherein, in the plane of said junction, said active layer has a narrow waveguide section which provides lateral mode stability and discrimination against high order transverse modes, and an amplifier section adjoining said waveguide section, wherein 0<x<1, 0<y<1, and 0<z<1, said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greater than that of said waveguide section, and the sandwich of n-doped layer, said active layer, and said p-doped layer being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 25

In a high power single spatial mode semiconductor laser having a substrate, a resonant cavity, and electrodes, an apparatus wherein the improvement comprises a layer of n-doped Al x Ga 1-x As; a layer of p-doped Al y Ga 1-y As; and an active layer of Al z Ga 1-z As such that z<x and z<y sandwiched between said layers of n-Al x Ga 1-x As and p-Al y Ga 1-y As to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of n-Aq x Ga 1-x As and p-Al y Ga 1-y As joining together along a planar junction without said active layer, wherein, in the plane of said junction, said active layer has a narrow waveguide section which provides lateral mode stability and discrimination against high order transverse modes, and an amplifier section adjoining said waveguide section, wherein 0<x<1, 0<y<1, and 0<z<1, said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greater than that of said waveguide section, and the sandwich of n-doped layer, said active layer, and said p-doped layer being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 26

The laser as recited in claim 19 wherein said high order transverse modes includes all transverse modes in excess of a single transverse mode.

Claim 27

The laser as recited in claim 19 wherein said narrow waveguide section has a width between 1 μm and 2μm, and a length of from 20 μm to 100 μm; and said amplifier section has a width between 5 μm and 20 μm and a length of several hundred microns.

Claim 28

The laser as recited in claim 21 wherein said narrow waveguide section has a width of 1.5 μm.

Claim 29

The laser as recited in claim 21 wherein said active layer including said waveguide section adjoining said amplifier section further includes a rear facet formed on said amplifier section, distant from said waveguide section; a front facet formed on said waveguide section, distant from said amplifier section; a dielectric film coated on said rear facet to produce a reflectivity between 90% and 97%; and a dielectric film coated on said front facet to reduce front facet reflectivity to below 10%.

Claim 30

In a high power single spatial mode semiconductor laser having a substrate, a resonant cavity, and electrodes, and apparatus wherein the improvement comprises a layer of n-doped Al x Ga 1-x As; a layer of p-doped Al y Ga 1-y As; and an active layer of Al z GA 1-z As such that z<x and z<y sandwiched between said layers of n-Al x Ga 1-x As and p-Al y Ga 1-y As to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of n-Al x Ga Ga 1-x As and p-Al y Ga 1-y As joingin together along a planar junction without said active layer, wherein 0<x<1, 0<y<1, and 0<z<1, and wherein, in the plane of said junction, said active layer has a first narrow waveguide section for providing lateral mode stability and discriminantion against high order transverse modes, said first section having a first end having a front facet formed thereon, and a second end; a second narrow waveguide section for providing lateral mode stability and discrimination against high order transverse modes, said second section having a first end having a rear facet formed thereon, and a second end; and an amplifier section positioned between said second ends of said waveguide sections, said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greater than that of said waveguide section, and the sandwich of said n-doped layer, said active layer, and said p-doped layer being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 31

In a high power single spatial mode semiconductor laser having a substrate, a resonant cavity, and electrodes, and apparatus wherein the improvement comprises a layer of n-doped Al x Ga 1-x As; a layer of p-doped Al y Ga 1-y As; and an active layer of Al z GA 1-z As such that z<x and z<y sandwiched between said layers of n-Al x Ga 1-x As and p-Al y Ga 1-y As to form a double heterostructure laser cavity which functions as said resonant cavity, said layers of n-Al x Ga Ga 1-x As and p-Al y Ga 1-y As joingin together along a planar junction without said active layer, wherein 0<x<1, 0<y<1, and 0<z<1, and wherein, in the plane of said junction, said active layer has a first narrow waveguide section for providing lateral mode stability and discriminantion against high order transverse modes, said first section having a first end having a front facet formed thereon, and a second end; a second narrow waveguide section for providing lateral mode stability and discrimination against high order transverse modes, said second section having a first end having a rear facet formed thereon, and a second end; and an amplifier section positioned between said second ends of said waveguide sections, said amplifier section having a length greater than that of said waveguide section, said amplifier section having a width greater than that of said waveguide section, and the sandwich of said n-doped layer, said active layer, and said p-doped layer being coupled to said substrate, whereby said electrodes can be applied across said substrate and said sandwich.

Claim 32

The laser as recited in claim 24 wherein said high order transverse modes includes all transverse modes in excess of a single transverse mode.

Claim 33

The laser as recited in claim 24 wherein each of said waveguide sections has a width between 1 μm and 2 μm, and a length of from 20 μm to 100 μm; and said amplifier section has a width about 5 μm to 20 μm and a length of several hundred microns.

Claim 34

The laser as recited in claim 24 further comprising a dielectric film coated on said rear facet to produce a reflectivity between 90% and 97%; and a dielectric film coated on said front facet to reduce front facet reflectivity to below 10%.