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US4219785A Expired / Lapsed US ⏱️ 0.0 years remaining

Optical beam scanning by phase delays

Assignee: Xerox Corp
•
Filing: 1978-06-26
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Granted: 1980-08-26
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Expires: 1998-06-26
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Abstract

Abstract A light beam scanner of the moving interference fringe pattern type which includes a body of semiconductor material having a source of coherent radiation and wave guides for guiding the coherent radiation along a plurality of spatially displaced paths which are optically uncoupled, and means associated with the spatially displaced paths for producing relative phase changes between radiation in the different paths whereby interference fringes in the far field are spatially scanned. In addition, wavelength modulation of the laser over a range of about 80 A can be achieved. The source of the coherent radiation can be a single laser or a plurality of optically coupled lasers, and the optical uncoupling can be achieved by spatial displacement of the paths or by insertion of a high loss medium between the paths.

Inventors

  • 👤 Donald R. Scifres
  • 👤 Robert D. Burnham
  • 👤 William Streifer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 23:13
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4068; H01S5/04; H01S5/042; H01S5/0425; H01S5/04254; H01S5/06; H01S5/062; H01S5/06233; H01S5/06243; H01S5/4075

Claims Analysis

Total Claims: 16
Claim 1
Independent Claim 204 words
A monolithic semiconductor device for providing a light beam scanner of the moving interference fringe type comprising: a plurality of layers of semiconductor material, one of said layers being a light waveguide layer, said light waveguide layer and another of said layers in contact with said light waveguide layer being doped such that a rectifying junction is formed at the interface therebetween, means for forward biasing selected portions of said rectifying junction to produce an injection of minority carriers into selected portions of said light waveguide layer, means for establishing a plurality of resonant cavities each including at least one of said selected portions of said light waveguide to produce in conjunction with said means for forward biasing a plurality of laser beams, said resonant cavities being optically coupled, a light output region for each of said plurality of laser beams, said light output regions being disposed such that said laser beams are optically uncoupled at said light output regions, and means operatively associated with at least one of said resonant cavities for producing a relative phase change between light radiation in said resonant cavities whereby the far field interference fringes produced by said laser beams exiting said light output regions are spatially scanned.
Claim 2
Dependent Claim 204 words
A monolithic semiconductor device for providing a light beam scanner of the moving interference fringe type comprising: a plurality of layers of semiconductor material, one of said layers being a light waveguide layer, said light waveguide layer and another of said layers in contact with said light waveguide layer being doped such that a rectifying junction is formed at the interface therebetween, means for forward biasing selected portions of said rectifying junction to produce an injection of minority carriers into selected portions of said light waveguide layer, means for establishing a plurality of resonant cavities each including at least one of said selected portions of said light waveguide to produce in conjunction with said means for forward biasing a plurality of laser beams, said resonant cavities being optically coupled, a light output region for each of said plurality of laser beams, said light output regions being disposed such that said laser beams are optically uncoupled at said light output regions, and means operatively associated with at least one of said resonant cavities for producing a relative phase change between light radiation in said resonant cavities whereby the far field interference fringes produced by said laser beams exiting said light output regions are spatially scanned.
Claim 3
Dependent Claim 22 words
The device of claim 1 wherein said means for producing a relative phase shift adjusts the bias applied to said resonant cavities.
Claim 4
Dependent Claim 18 words
The device of claim 1 wherein said light output regions are optically uncoupled due to their spatial separation.
Claim 5
Dependent Claim 25 words
The device of claim 1 wherein said light output regions are optically uncoupled due to a material having a low refractive index being disposed therebetween.
Claim 6
Dependent Claim 20 words
The device of claim 1 wherein said resonant cavities are optically coupled by providing each cavity with a common portion.
Claim 7
Dependent Claim 41 words
The device of claim 1 wherein said resonant cavities are optically coupled by disposing said resonant cavities in proximity to each other such that there is an overlapping of the radiation patterns of said light beams produced by said resonant cavities.
Claim 8
Dependent Claim 118 words
A monolithic semiconductor device for providing a scanning light beam comprising: a plurality of optically resonant cavities, pumping means associated with each of said cavities for ininjecting minority carriers thereinto, said resonant cavities and said pumping means producing a laser beam in each of said resonant cavities, said resonant cavities being optically coupled, a light output area associated with each of said resonant cavities whereby a portion of each of said laser beams can exit each of said resonant cavities, said light output areas being optically uncoupled, and means for changing the relative phase of said portions of said laser beams whereby the interference fringe pattern produced by said portions of said laser beams is caused to scan.
Claim 9
Dependent Claim 118 words
A monolithic semiconductor device for providing a scanning light beam comprising: a plurality of optically resonant cavities, pumping means associated with each of said cavities for ininjecting minority carriers thereinto, said resonant cavities and said pumping means producing a laser beam in each of said resonant cavities, said resonant cavities being optically coupled, a light output area associated with each of said resonant cavities whereby a portion of each of said laser beams can exit each of said resonant cavities, said light output areas being optically uncoupled, and means for changing the relative phase of said portions of said laser beams whereby the interference fringe pattern produced by said portions of said laser beams is caused to scan.
Claim 10
Dependent Claim 25 words
The device of claim 7 wherein said means for changing the relative phase of said laser beams adjusts the relative magnitudes of said pump means.
Claim 11
Dependent Claim 20 words
The device of claim 7 wherein said resonant cavities are optically coupled by providing each cavity with a common portion.
Claim 12
Dependent Claim 41 words
The device of claim 7 wherein said resonant cavities are optically coupled by disposing said resonant cavities in proximity to each other such that there is an overlapping of the radiation patterns of said light beam produced by said resonant cavities.
Claim 13
Dependent Claim 18 words
The device of claim 7 wherein said light output regions are optically uncoupled due to their spatial separation.
Claim 14
Dependent Claim 25 words
The device of claim 7 wherein said light output regions are optically uncoupled due to a material having a low refractive index being disposed therebetween.
Claim 15
Dependent Claim 108 words
A monolithic semiconductor device for providing laser cavity wavelength modulation comprising: a plurality of optically resonant cavities, pumping means associated with each of said cavities for injecting minority carriers thereinto, said resonant cavities and said pumping means producing a laser beam in each of said resonant cavities, said resonant cavities being optically coupled, a light output area associated with each of said resonant cavities whereby a portion of each of said light beams can exit each of said resonant cavities, said light output areas being optically uncoupled, and means for changing the relative phase of said portions of said laser beams whereby laser cavity wavelength modulation is achieved.
Claim 16
Dependent Claim 108 words
A monolithic semiconductor device for providing laser cavity wavelength modulation comprising: a plurality of optically resonant cavities, pumping means associated with each of said cavities for injecting minority carriers thereinto, said resonant cavities and said pumping means producing a laser beam in each of said resonant cavities, said resonant cavities being optically coupled, a light output area associated with each of said resonant cavities whereby a portion of each of said light beams can exit each of said resonant cavities, said light output areas being optically uncoupled, and means for changing the relative phase of said portions of said laser beams whereby laser cavity wavelength modulation is achieved.

References Cited (Backward Citations)

US3436679A Cited
US3626321A Cited
US3691483A Cited
US3701044A Cited
US4159452A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1983-08-26 1984-02-25 1984-08-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1987-08-26 1988-02-25 1988-08-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1991-08-26 1992-02-25 1992-08-26 $7700.00 Window Closed / Lapsed

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