Method of thinning a silicon wafer using a reinforcing material

Claim 1

A method of thinning a plate-like body of a given material at least about 0.5 mm thick, comprising forming a coating on one main face of the body, the coating comprising as a component at least about 18 weight percent of said given material and being in finely divided form, fusing the coating material so as to form a mechanically-supportive coating in direct adhesive relationship with said body, and thinning the body from the opposite main face of the body to a thickness in the range from about 10 μm to about 160 μm.

Claim 2

A method of thinning a plate-like body of a given material at least about 0.5 mm thick, comprising forming a coating on one main face of the body, the coating comprising as a component at least about 18 weight percent of said given material and being in finely divided form, fusing the coating material so as to form a mechanically-supportive coating in direct adhesive relationship with said body, and thinning the body from the opposite main face of the body to a thickness in the range from about 10 μm to about 160 μm.

Claim 4

A method of thinning a plate-like body of silicon at least about 0.5 mm thick and having a layer of refractory metal adhered to one main face of the body, comprising applying a coating of finely-divided silica-based material over said layer of refractory metal, fusing the coating material at a temperature below the melting point of the refractory metal so as to form a mechanically-supportive coating in direct adhesive relationship to the refractory metal, and thinning the body from the opposite main face of the body to a thickness in the range from about 10 μm to about 160 μm.

Claim 5

A method of thinning a plate-like body of silicon at least about 0.5 mm thick and having a layer of refractory metal adhered to one main face of the body, comprising applying a coating of finely-divided silica-based material over said layer of refractory metal, fusing the coating material at a temperature below the melting point of the refractory metal so as to form a mechanically-supportive coating in direct adhesive relationship to the refractory metal, and thinning the body from the opposite main face of the body to a thickness in the range from about 10 μm to about 160 μm.

Claim 8

A method of thinning a plate-like body of silicon having first and second opposite surfaces, said body being about 0.5 mm thick and bearing a pattern of metal and silicon dioxide at one surface, and the method comprising providing a finely divided material that comprises at least about 18 weight percent silicon and can be fused at a temperature below the melting point of said metal to form a liquid that wets both said metal and silicon dioxide and on cooling forms a hard, homogeneous mass that adheres to both said metal and silicon dioxide, applying said material as a coating to said first surface of the body, fusing the finely divided material at a temperature below the melting point of said metal, allowing the body and the fused material to cool, and thinning the body from its second surface to a thickness in the range from about 10 μm to about 160 μm.

Claim 9

A method of thinning a plate-like body of silicon having first and second opposite surfaces, said body being about 0.5 mm thick and bearing a pattern of metal and silicon dioxide at one surface, and the method comprising providing a finely divided material that comprises at least about 18 weight percent silicon and can be fused at a temperature below the melting point of said metal to form a liquid that wets both said metal and silicon dioxide and on cooling forms a hard, homogeneous mass that adheres to both said metal and silicon dioxide, applying said material as a coating to said first surface of the body, fusing the finely divided material at a temperature below the melting point of said metal, allowing the body and the fused material to cool, and thinning the body from its second surface to a thickness in the range from about 10 μm to about 160 μm.

Claim 10

A method of thinning a plate-like body of silicon at least about 0.5 mm thick and having first and second main surfaces, comprising applying to the first main surface of the body a coating of a finely divided material that comprises at least about 40 weight percent of silica, processing the coating material to form a hard, mechanically-supportive mass that is in adhesive relationship with first main surface, and thinning the body from its second main surface to a thickness in the range from about 10 μm to about 160 μm.

Claim 11

A method of thinning a plate-like body of silicon at least about 0.5 mm thick and having first and second main surfaces, comprising applying to the first main surface of the body a coating of a finely divided material that comprises at least about 40 weight percent of silica, processing the coating material to form a hard, mechanically-supportive mass that is in adhesive relationship with first main surface, and thinning the body from its second main surface to a thickness in the range from about 10 μm to about 160 μm.

Claim 13

A method of thinning a plate-like body of a given material at least about 0.5 mm thick and having first and second opposite main surfaces, comprising providing a coating material that comprises as a component at least about 18 weight percent of said given material, applying the coating material to the first main surface of the body in finely divided form, processing the coating material to form a hard, mechanicallysupportive mass that is in adhesive relationship with said first main surface, and thinning the body from its second main surface to a thickness in the range from about 10 μm to about 160 μm.

Claim 14

A method of thinning a plate-like body of a given material at least about 0.5 mm thick and having first and second opposite main surfaces, comprising providing a coating material that comprises as a component at least about 18 weight percent of said given material, applying the coating material to the first main surface of the body in finely divided form, processing the coating material to form a hard, mechanicallysupportive mass that is in adhesive relationship with said first main surface, and thinning the body from its second main surface to a thickness in the range from about 10 μm to about 160 μm.

Claim 17

A method of thinning a wafer that is at least about 0.5 mm thick and has electronic circuit means integrated therein subjacent a front face of the wafer, comprising applying a layer of a glass material to the front face of the wafer, the glass material being in finely divided form and having a coefficient of thermal expansion that matches closely that of the material of the wafer, fusing the glass material so as to form a mechanically-supportive coating in direct adhesive relationship with the wafer, and thinning the wafer from its back face to a thickness less than about 250 μm.

Claim 18

A method of thinning a wafer that is at least about 0.5 mm thick and has electronic circuit means integrated therein subjacent a front face of the wafer, comprising applying a layer of a glass material to the front face of the wafer, the glass material being in finely divided form and having a coefficient of thermal expansion that matches closely that of the material of the wafer, fusing the glass material so as to form a mechanically-supportive coating in direct adhesive relationship with the wafer, and thinning the wafer from its back face to a thickness less than about 250 μm.