US4422091A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Backside illuminated imaging charge coupled device
Assignee: Boeing North American Inc
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Filing: 1981-01-19
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Granted: 1983-12-20
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Expires: 2001-01-19
Abstract
Abstract An imaging charge coupled device (CCD) is provided which has a support on the non-illuminated, circuit side of a CCD channel layer. The other side of the CCD channel layer (the semiconductor side) is epitaxially joined to an absorber layer of semiconductor which is epitaxially joined to a window layer. This structure is fabricated by growing the epitaxial semiconductor layers (window, absorber, and channel) on a semiconductor substrate, fabricating a CCD circuit on the channel layer, mounting the channel layer to a support, and finally etching off the substrate.
Inventors
- 👤 Yet-Zen Liu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:24
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/2823; H10F39/00; H10F39/10; H10F39/12; H10F39/15
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
130 words
An imaging charge coupled device (CCD) comprising: a first layer of supporting material; a second layer of semiconductive material of a first conductivity type having a CCD circuit on one side, said one side being bonded to said first layer; a third layer of semiconductive material of a second conductivity type epitaxially joined to the other side of said second layer; and a fourth thin layer of semiconductive material of said second conductivity type epitaxially joined to said third layer, said semiconductive material forming said fourth layer having a wider bandgap than said semiconductive material forming said third layer so that said fourth layer is a window for said third layer; said imaging CCD not having a substrate, whereby the support for said device is provided by said first layer.
Claim 2
Dependent Claim
130 words
An imaging charge coupled device (CCD) comprising: a first layer of supporting material; a second layer of semiconductive material of a first conductivity type having a CCD circuit on one side, said one side being bonded to said first layer; a third layer of semiconductive material of a second conductivity type epitaxially joined to the other side of said second layer; and a fourth thin layer of semiconductive material of said second conductivity type epitaxially joined to said third layer, said semiconductive material forming said fourth layer having a wider bandgap than said semiconductive material forming said third layer so that said fourth layer is a window for said third layer; said imaging CCD not having a substrate, whereby the support for said device is provided by said first layer.
Claim 3
Dependent Claim
19 words
The device as claimed in claim 1, including a layer of insulating material between said first and second layers.
Claim 4
Dependent Claim
15 words
The device as claimed in claim 2, wherein said first layer comprises a metal layer.
Claim 5
Dependent Claim
26 words
The device as claimed in claim 1, wherein said first layer comprises a semiconductor chip having a circuit which is electrically coupled to said CCD circuit.
Claim 6
Dependent Claim
34 words
The device as claimed in claim 1, wherein said first layer extends outwardly to form a border around the periphery of said second layer and said CCD circuit includes interconnect pads on said border.
Claim 7
Dependent Claim
33 words
The device as claimed in claim 1, wherein said second layer comprises an n-type (GaAl)As semiconductor, said third layer comprises a p-type GaAs semiconductor, and said fourth layer comprises a p-type (GaAl)As semiconductor.
Claim 8
Dependent Claim
119 words
An imaging charge coupled device (CCD) comprising: an epitaxial layer of a first conductivity type (GaAl)As having an aluminum content suitable for a CCD circuit; a CCD circuit on one side of said first conductivity typ (GaAl)As; a layer of support material bounded to said one side of said first conductivity type (GaAs)As; an epitaxial layer of a second conductivity type GaAs on the other side of said first conductivity type (GaAl)As to provide an absorber layer for said imaging CCD; and an epitaxial layer of a second conductivity type (GaAl)As on said second conductivity type GaAs, the Al content of said second conductivity type (GaAl)As being selected to be transparent to the desired wavelength of said imaging CCD.
Claim 9
Dependent Claim
119 words
An imaging charge coupled device (CCD) comprising: an epitaxial layer of a first conductivity type (GaAl)As having an aluminum content suitable for a CCD circuit; a CCD circuit on one side of said first conductivity typ (GaAl)As; a layer of support material bounded to said one side of said first conductivity type (GaAs)As; an epitaxial layer of a second conductivity type GaAs on the other side of said first conductivity type (GaAl)As to provide an absorber layer for said imaging CCD; and an epitaxial layer of a second conductivity type (GaAl)As on said second conductivity type GaAs, the Al content of said second conductivity type (GaAl)As being selected to be transparent to the desired wavelength of said imaging CCD.
Claim 10
Dependent Claim
50 words
The imaging CCD as claimed in claim 7, wherein said layer of first conductivity type (GaAl)As comprises n-type (Ga 0 .7 Al 0 .3)As, said layer of second conductivity type GaAs comprises p-type GaAs, and said layer of second conductivity type (GaAl)As comprises p-type (Ga 0 .5 Al 0 .5)As.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-12-19 | 1987-06-20 | 1987-12-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-12-19 | 1991-06-20 | 1991-12-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-12-19 | 1995-06-20 | 1995-12-20 | $7700.00 | Window Closed / Lapsed |