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US4943948A
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Program check for a non-volatile memory
Assignee: NXP USA Inc
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Filing: 1986-06-05
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Granted: 1990-07-24
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Expires: 2006-06-05
Abstract
Abstract A non-volatile memory has memory cells which are programmable to a programmed state from an unprogrammed state. Programming changes the conductivity of the memory cell which is being programmed. The particular state of a selected memory cell is determined by comparing the conductivity of the selected memory cell to that of a normal reference. In order to assure that a memory cell has been programmed to a conductivity which is sufficient for reliable detection, a substitute reference with a different conductivity is used immediately after programming. If the selected cell is detected as being programmed when compared to the substitute reference, the selected cell is then determined to have been sufficiently programmed for reliable detection using the normal reference.
Inventors
- 👤 Bruce L. Morton
- 👤 Bruce E. Engles
- 👤 Michael H. Chaddock
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:10
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C16/06; G11C16/34; G11C16/3436; G11C16/3454; G11C16/3459
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
156 words
In a memory having an array of non-volatile memory cells which are in either a programmed or unprogrammed state, wherein a memory cell in the programmed state has a conductivity on one side of a first magnitude and a memory cell in the unprogrammed state has a conductivity on the other side of the first magnitude, a circuit comprising: reference means for selectively providing a reference at a conductivity of a second magnitude or a conductivity of a third magnitude; sense amplifier means, coupled to the reference means, for determining if a selected cell is in the programmed or unprogrammed state when the reference means provides the reference at a conductivity of the second magnitude and for determining if a selected cell has a conductivity less than a fourth magnitude when said reference means provides the reference at a conductivity of the third magnitude, said fourth magnitude being on said one side of said first magnitude.
Claim 2
Dependent Claim
156 words
In a memory having an array of non-volatile memory cells which are in either a programmed or unprogrammed state, wherein a memory cell in the programmed state has a conductivity on one side of a first magnitude and a memory cell in the unprogrammed state has a conductivity on the other side of the first magnitude, a circuit comprising: reference means for selectively providing a reference at a conductivity of a second magnitude or a conductivity of a third magnitude; sense amplifier means, coupled to the reference means, for determining if a selected cell is in the programmed or unprogrammed state when the reference means provides the reference at a conductivity of the second magnitude and for determining if a selected cell has a conductivity less than a fourth magnitude when said reference means provides the reference at a conductivity of the third magnitude, said fourth magnitude being on said one side of said first magnitude.
Claim 3
Dependent Claim
78 words
The memory of claim 1, wherein a conductivity on said one side of the fourth magnitude is characterized as a conductivity less than said second magnitude; whereby a cell is programmed when it has a conductivity less than the first magnitude, a cell which is determined to have a conductivity on said one side of the fourth magnitude has a conductivity which is less than the fourth magnitude, and the fourth magnitude is less than the first magnitude.
Claim 4
Dependent Claim
73 words
The memory of claim 2 wherein the sense amplifier is further characterized as providing an output signal in a first logic state when the selected cell has a conductivity which is less than the first magnitude if the reference means provides a conductivity of the second magnitude and when the selected cell has a conductivity which is less than the fourth magnitude if the reference means provides a conductivity of the third magnitude.
Claim 5
Dependent Claim
79 words
The memory of claim 1 wherein the sense amplifier is further characterized as providing an output signal in a first logic state when the selected cell has a conductivity which is on said one side of the first magnitude if the reference means provides a conductivity of the second magnitude and when the selected cell has a conductivity which is on said one side of the fourth magnitude if the reference means provides a conductivity of the third magnitude.
Claim 6
Dependent Claim
160 words
In a memory having an array of non-volatile memory cells which are in either a programmed or an erased state, wherein a memory cell in the programmed state has a conductivity on the side of a first conductivity and a memory cell in the erased state has a conductivity on the other side of the first conductivity, and having a sense amplifier for comparing the conductivity of a selected cell to a reference coupled to the sense amplifier, a circuit comprising: decoder means for selecting a memory cell in response to an address and for coupling said selected memory cell to the sense amplifier; read means for coupling the reference to the sense amplifier at a conductivity of a first magnitude when a control signal is in a first logic state; and program check means for coupling the reference to the sense amplifier at a conductivity of a second magnitude when the control signal is in a second logic state.
Claim 7
Dependent Claim
160 words
In a memory having an array of non-volatile memory cells which are in either a programmed or an erased state, wherein a memory cell in the programmed state has a conductivity on the side of a first conductivity and a memory cell in the erased state has a conductivity on the other side of the first conductivity, and having a sense amplifier for comparing the conductivity of a selected cell to a reference coupled to the sense amplifier, a circuit comprising: decoder means for selecting a memory cell in response to an address and for coupling said selected memory cell to the sense amplifier; read means for coupling the reference to the sense amplifier at a conductivity of a first magnitude when a control signal is in a first logic state; and program check means for coupling the reference to the sense amplifier at a conductivity of a second magnitude when the control signal is in a second logic state.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-23 | 1994-01-22 | 1994-07-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-23 | 1998-01-22 | 1998-07-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-23 | 2002-01-22 | 2002-07-24 | $7700.00 | Window Closed / Lapsed |