Integrated-circuit having two NMOS depletion mode transistors for producing stable DC voltage

Claim 2

An integrated-circuit which in response to a variable DC input voltage produces a stable DC output voltage, comprising: a. first and second NMOS depletion mode transistors each having gate, drain and source electrodes electrically connected as follows the source electrode of the first transistor and the drain electrodes of the second transistor being connected, the gate electrodes of both transistors and the source electrode of the second transistor being connected to a reference potential and the drain electrode of the first transistor being connected to the variable DC input voltage; and b. parameters of the first and second transistors being selected so that the desired stable DC voltage is produced at the electrical junction of the connected source and drain electrodes.

Claim 3

The invention as set forth in claim 1, wherein both transistors are operated in saturated modes of operation.

Claim 4

The invention as set forth in claim 1, wherein the first transistor is operated in the saturated mode and the second transistor is operated in the linear mode.

Claim 5

An integrated-circuit which in response to a variable DC input voltage produces a stable DC output voltage, consisting essentially of: a. first and second NMOS depletion mode transistors each having gate, drain and source electrodes and the following parameters: V T (threshhold voltage), L (channel length) and W (channel width), the electrodes being electrically connected as follows: the source and drain electrodes of the first and second transistors, respectively, being connected, the gate electrodes of both transistors and the source electrode of the second transistor being connected to ground and the drain electrode of the first transistor being connected to the variable input voltage; and b. the parameters V T , W, and L of the first and second transistors being selected so that the desired stable DC voltage is produced at the electrical junction of the connected source and drain electrodes.

Claim 6

An integrated-circuit which in response to a variable DC input voltage produces a stable DC output voltage, consisting essentially of: a. first and second NMOS depletion mode transistors each having gate, drain and source electrodes and the following parameters: V T (threshhold voltage), L (channel length) and W (channel width), the electrodes being electrically connected as follows: the source and drain electrodes of the first and second transistors, respectively, being connected, the gate electrodes of both transistors and the source electrode of the second transistor being connected to ground and the drain electrode of the first transistor being connected to the variable input voltage; and b. the parameters V T , W, and L of the first and second transistors being selected so that the desired stable DC voltage is produced at the electrical junction of the connected source and drain electrodes.

Claim 7

The invention as set forth in claim 4, wherein both transistors are operated in saturated modes of operation.

Claim 8

The invention as set forth in claim 4, wherein the first transistor is operated in the saturated mode and the second transistor is operated in the linear mode.