US4001612A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Linear resistance element for lsi circuitry
Assignee: International Business Machines Corp
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Filing: 1975-12-17
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Granted: 1977-01-04
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Expires: 1995-12-17
Abstract
Abstract This invention features the use of two paralleled insulated gate depletion channel field effect transistors (FET) having their gates connected one to the source voltage and one to the drain voltage to provide a linear resistance element. The actual resistance value can be controlled by selecting design parameters and can be extended by using a plurality of such elements in series to provide greater resistances and/or higher voltage capabilities or in parallel to provide greater current capacity. The described resistor is used as a cost and space saving alternate to discrete resistor components and is particularly useful as a part of an integrated circuit in analog type devices.
Inventors
- 👤 Takaaki Aoki
- 👤 Paul Evrenidis
- 👤 Ryo Igarashi
- 👤 Seiki Ogura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:04
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D30/00; H10D30/60
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
138 words
A constant resistance integrated circuit configuration for a semi-conductor chip, said circuit comprising: two substantially similar depletion mode field effect transistors, each having a source and a drain electrode connected by a conductive region; a conductive area on said chip connected to said drain electrodes of both said transistors to form a drain connection; a second conductive area on said chip connected to said source electrodes of both said transistors to form a source connection; a pair of gate electrodes, each forming a part of one of said transistors with each gate electrode adjacent to and insulated from an associated one of said conductive regions to control the flow of current therein; a conductor connecting one of said gate electrodes to said drain connection; and another conductor connecting the other of said gate electrodes to said source connection.
Claim 2
Dependent Claim
138 words
A constant resistance integrated circuit configuration for a semi-conductor chip, said circuit comprising: two substantially similar depletion mode field effect transistors, each having a source and a drain electrode connected by a conductive region; a conductive area on said chip connected to said drain electrodes of both said transistors to form a drain connection; a second conductive area on said chip connected to said source electrodes of both said transistors to form a source connection; a pair of gate electrodes, each forming a part of one of said transistors with each gate electrode adjacent to and insulated from an associated one of said conductive regions to control the flow of current therein; a conductor connecting one of said gate electrodes to said drain connection; and another conductor connecting the other of said gate electrodes to said source connection.
Claim 3
Dependent Claim
108 words
A constant resistance integrated circuit for use with other circuits on a semi-conductor substrate, said circuit comprising: a pair of depletion mode field effect transistors, each having a source terminal and a drain terminal connected by a conductive region and each with a gate electrode adjacent to and insulated from said conductive region, a conductor connected to the drain terminals of both said transistors and to one of said gates, and a second conductor connected to the source terminals of both said transistors and to the other of said gates, said first and second conductors being connectable with other circuits on said chip to control current flow therein.
Claim 4
Dependent Claim
108 words
A constant resistance integrated circuit for use with other circuits on a semi-conductor substrate, said circuit comprising: a pair of depletion mode field effect transistors, each having a source terminal and a drain terminal connected by a conductive region and each with a gate electrode adjacent to and insulated from said conductive region, a conductor connected to the drain terminals of both said transistors and to one of said gates, and a second conductor connected to the source terminals of both said transistors and to the other of said gates, said first and second conductors being connectable with other circuits on said chip to control current flow therein.
References Cited (Backward Citations)
US3700981A
Cited
US3829888A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-01-04 | 1980-07-05 | 1981-01-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-01-04 | 1984-07-05 | 1985-01-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-01-04 | 1988-07-05 | 1989-01-04 | $7700.00 | Window Closed / Lapsed |