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US4940673A
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PN junction passivation using methylated silyloxy groups
Assignee: US Philips Corp
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Filing: 1988-09-26
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Granted: 1990-07-10
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Expires: 2008-09-26
Abstract
Abstract The invention relates to a method of manufacturing a semiconductor device, in which methylated silyloxy groups are formed on a silicon oxide layer which protects a PN junction, the methylated silyloxy groups being formed to reduce the leakage current of the device. The method employs a solution in which an amine is present which is at least di-substituted.
Inventors
- 👤 Johannes J. Ponjee
- 👤 Fredericus J. Touwslager
- 👤 Ivo G. J. Camps
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 15:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/66; H10P14/662; H10W; H10W74/00; H10W74/40; H10W74/47; H10P14/63; H10P14/6326; H10P14/6342; H10P14/69215
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
80 words
A method of minimizing leakage current on a PN junction present in a semiconductor device the surface of which is provided, at least at the location of the PN junction, with a silicon oxide layer, comprising forming methyl-substituted silyloxy groups on the surface of said layer by exposing said silicon oxide layer with a solution capable of forming such groups and in which solution an amine is present in which two alkyl groups are directly attached to the amino nitrogen.
Claim 2
Independent Claim
80 words
A method of minimizing leakage current on a PN junction present in a semiconductor device the surface of which is provided, at least at the location of the PN junction, with a silicon oxide layer, comprising forming methyl-substituted silyloxy groups on the surface of said layer by exposing said silicon oxide layer with a solution capable of forming such groups and in which solution an amine is present in which two alkyl groups are directly attached to the amino nitrogen.
Claim 3
Independent Claim
87 words
A method of minimizing leakage current on a PN junction present in a semiconductor device the surface of which is provided, at least at the location of the PN junction, with a silicon oxide layer, comprising forming methyl-substituted silyloxy groups on the surface of said layer by exposing, at a temperature of approximately 100° C., said silicon oxide layer to a solution capable of forming such groups and in which solution an amine is present in which two alkyl groups are directly attached to the amino nitrogen.
Claim 4
Independent Claim
87 words
A method of minimizing leakage current on a PN junction present in a semiconductor device the surface of which is provided, at least at the location of the PN junction, with a silicon oxide layer, comprising forming methyl-substituted silyloxy groups on the surface of said layer by exposing, at a temperature of approximately 100° C., said silicon oxide layer to a solution capable of forming such groups and in which solution an amine is present in which two alkyl groups are directly attached to the amino nitrogen.
Claim 5
Dependent Claim
21 words
A method as claimed in claim 1 wherein amine is a dialkylamine in which the alkyl is methyl, ethyl or propyl.
Claim 6
Dependent Claim
22 words
A method as claimed in claim 1, characterized in that the silyloxy groups are formed in vapour of the solution while refluxing.
Claim 7
Dependent Claim
23 words
A method as claimed in claim 1, characterized in that the silyloxy groups are formed by immersing the semiconductor body in the solution.
Claim 8
Dependent Claim
40 words
A method as claimed in claim 1, characterized in that a solution is used which contains a compound selected from the group consisting of (dialkyl amino)-trimethyl silane and bis (dialkyl amino)-dimethyl silane, in which alkyl is methyl, ethyl or propyl.
Claim 9
Dependent Claim
54 words
A method as claimed in claim 1, characterized in that a solution is used which contains an amine and a compound selected from the group consisting of a trimethyl silyl compound having a silicon-bonded group which can be split off and a dimethyl silyl compound having two silicon-bonded groups which can be split off.
Claim 10
Dependent Claim
28 words
A method as claimed in claim 7, characterized in that the groups which can be split off are selected from the group consisting of chlorine, methoxy and ethoxy.
Claim 11
Dependent Claim
16 words
A method as claimed in claim 1, characterized in that toluene is selected as a solvent.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-09 | 1994-01-08 | 1994-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-09 | 1998-01-08 | 1998-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-09 | 2002-01-08 | 2002-07-10 | $7700.00 | Window Closed / Lapsed |