US4933742A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Metallization contact system for large scale integrated circuits
Assignee: Intersil Corp
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Filing: 1988-02-01
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Granted: 1990-06-12
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Expires: 2008-02-01
Abstract
Abstract A contact metal such as tungsten, platinum silicide or palladium silicide is selectively deposited or formed on the semiconductor substrate portion of an integrated circuit chip. The metallization pattern for the circuit makes contact with the contact metal at the bottom of a contact opening or via, rather than contacting the substrate directly. Thus, the interconnection metal makes contact to the semiconductor surface through an intermediate contact metal so as to provide decreased contact resistance. This permits narrower interconnect metallization patterns so as to facilitate the construction of denser integrated circuits. In the present invention, therefore, metal framing of the contact hole is not employed.
Inventors
- 👤 Dale M. Brown
- 👤 Bernard Gorowitz
- 👤 Ronald H. Wilson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 22:16
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/0698; H10P; H10P14/00; H10P14/40; H10P14/418; H10P14/42; H10P14/43; H10P14/432; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 29
Claim 1
Independent Claim
124 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer of tungsten, disposed within said at least one opening, in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer being self-aligned to either said conductive region or said opening; and a layer of interconnection metallization disposed in ohmic electrical contact with said contact enhancement layer with said interconnection metallization being disposed so as to only partially overlie said contact enhancement layer, said interconnection metallization having a width less than a width of said opening.
Claim 2
Dependent Claim
124 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer of tungsten, disposed within said at least one opening, in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer being self-aligned to either said conductive region or said opening; and a layer of interconnection metallization disposed in ohmic electrical contact with said contact enhancement layer with said interconnection metallization being disposed so as to only partially overlie said contact enhancement layer, said interconnection metallization having a width less than a width of said opening.
Claim 3
Dependent Claim
19 words
The device of claim 1 in which said interconnection metallization and said contact enhancement layer metal comprise distinct materials.
Claim 4
Dependent Claim
34 words
The device of claim 1 in which said interconnection metallization comprises tungsten and said contact enhancement layer metal is sufficiently thick so as not to be completely removable by patterning of said interconnection metallization.
Claim 5
Dependent Claim
21 words
The device of claim 1 in which a portion of said contact enhancement layer is not covered by said interconnection metallization.
Claim 6
Dependent Claim
20 words
The device of claim 1 in which said semiconductor material is selected from the group consisting of silicon and gallium-arsenide.
Claim 7
Dependent Claim
133 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer disposed within said opening in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer comprising material selected from the group consisting of platinum silicide and palladium silicide and being self aligned to said conductive region; and a layer of interconnection metallization disposed in ohmic electrical contact with said contact enhancement layer in said opening with said interconnection metallization being disposed so as to only partially overlie said contact enhancement layer, said interconnection metallization having a width less than a width of said opening.
Claim 8
Dependent Claim
133 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer disposed within said opening in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer comprising material selected from the group consisting of platinum silicide and palladium silicide and being self aligned to said conductive region; and a layer of interconnection metallization disposed in ohmic electrical contact with said contact enhancement layer in said opening with said interconnection metallization being disposed so as to only partially overlie said contact enhancement layer, said interconnection metallization having a width less than a width of said opening.
Claim 9
Dependent Claim
19 words
The device of claim 6 in which said interconnection metallization and said contact enhancement layer material comprise distinct materials.
Claim 10
Dependent Claim
27 words
The device of claim 6 in which said contact enhancement layer is sufficiently thick so as not to be completely removable by patterning of said interconnection metal.
Claim 11
Dependent Claim
21 words
The device of claim 6 in which a portion of said contact enhancement layer is not covered by said interconnection metallization.
Claim 12
Dependent Claim
20 words
The device of claim 6 in which siad semiconductor material is selected from the group consisting of silicon and gallium-arsenide.
Claim 13
Dependent Claim
91 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a contact enhancement layer disposed in ohmic electrical contact with said conductive region of semiconductor material, and self aligned to said conductive region; and a layer of interconnection metallization directly disposed in ohmic electrical contact with said contact enhancement layer, without being deposited through a contact hole formed in a layer of insulation material and with said interconnection metallization being disposed so as to only partially overlie said contact enhancement layer.
Claim 14
Dependent Claim
91 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a contact enhancement layer disposed in ohmic electrical contact with said conductive region of semiconductor material, and self aligned to said conductive region; and a layer of interconnection metallization directly disposed in ohmic electrical contact with said contact enhancement layer, without being deposited through a contact hole formed in a layer of insulation material and with said interconnection metallization being disposed so as to only partially overlie said contact enhancement layer.
Claim 15
Dependent Claim
119 words
An unframed contact configuration for use in integrated circuit devices, said configuration comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material and having at least one opening therein; a layer of contact enhancement material selectively disposed within said at least one opening in ohmic electrical contact with said conductive region of semiconductor material and self-aligned to said conductive region; and a layer of interconnection metallization in ohmic electrical contact with said contact enhancement layer, said interconnection metallization layer not being wider than said at least one opening, said contact enhancement layer providing a lower contact resistance between said interconnection metallization layer and said conductive region.
Claim 16
Dependent Claim
119 words
An unframed contact configuration for use in integrated circuit devices, said configuration comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material and having at least one opening therein; a layer of contact enhancement material selectively disposed within said at least one opening in ohmic electrical contact with said conductive region of semiconductor material and self-aligned to said conductive region; and a layer of interconnection metallization in ohmic electrical contact with said contact enhancement layer, said interconnection metallization layer not being wider than said at least one opening, said contact enhancement layer providing a lower contact resistance between said interconnection metallization layer and said conductive region.
Claim 17
Dependent Claim
93 words
An unframed contact configuration for use in integrated circuit devices, said configuration comprising: a conductive region of semiconductor material of one type conductivity; a layer of contact enhancement material selectively disposed in ohmic electrical contact with said semiconductor material and self-aligned to said conductive region; a layer of interconnection metallization disposed at least partially over and in electrical contact with said contact enhancement layer, said interconnection metallization layer in the vicinity of said contact enhancement layer not being wider than the metallization layer leading to said contact enhancement layer to improve packing density.
Claim 18
Dependent Claim
93 words
An unframed contact configuration for use in integrated circuit devices, said configuration comprising: a conductive region of semiconductor material of one type conductivity; a layer of contact enhancement material selectively disposed in ohmic electrical contact with said semiconductor material and self-aligned to said conductive region; a layer of interconnection metallization disposed at least partially over and in electrical contact with said contact enhancement layer, said interconnection metallization layer in the vicinity of said contact enhancement layer not being wider than the metallization layer leading to said contact enhancement layer to improve packing density.
Claim 19
Dependent Claim
21 words
The device of claim 1 in which said contact enhancement layer substantially completely covers said semiconductor material exposed through said opening.
Claim 20
Dependent Claim
21 words
The device of claim 6 in which said contact enhancement layer substantially completely covers said semiconductor material exposed through said opening.
Claim 21
Dependent Claim
21 words
The device of claim 11 in which said contact enhancement layer substantially completely covers said conductive region of said semiconductive material.
Claim 22
Dependent Claim
23 words
The configuration of claim 12 in which said layer of contact enhancement material substantially completely covers said semiconductor material exposed through said opening.
Claim 23
Dependent Claim
22 words
The configuration of claim 13 in which said layer of contact enhancement material substantially completely covers exposed portions of said semiconductor material.
Claim 24
Dependent Claim
129 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer of tungsten, selectively disposed in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer being self-aligned to said at least one opening; and a layer of interconnection metallization disposed in ohmic electrical contact with said contact enhancement layer, said interconnection metallization exhibiting a width which is approximately the same as or less than the width of said at least one opening, said contact enhancement layer providing a lower contact resistance between said interconnection metallization layer and said conductive region.
Claim 25
Dependent Claim
129 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer of tungsten, selectively disposed in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer being self-aligned to said at least one opening; and a layer of interconnection metallization disposed in ohmic electrical contact with said contact enhancement layer, said interconnection metallization exhibiting a width which is approximately the same as or less than the width of said at least one opening, said contact enhancement layer providing a lower contact resistance between said interconnection metallization layer and said conductive region.
Claim 26
Dependent Claim
146 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer selectively disposed within said opening in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer comprising material selected from the group consisting of platinum silicide and palladium silicide and being self aligned to said conductive region; and a layer of interconnection metallization at least partially overlying said insulative layer and disposed in ohmic electrical contact with said contact enhancement layer in said opening, said interconnection metallization layer exhibiting a width which is approximately the same as or less than the width of said opening, at least in the vicinity of said opening to improve packing density.
Claim 27
Dependent Claim
146 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a layer of insulative material overlying said conductive region of semiconductor material, said insulative layer having at least one opening therein; a contact enhancement layer selectively disposed within said opening in ohmic electrical contact with said conductive region of semiconductor material, said contact enhancement layer comprising material selected from the group consisting of platinum silicide and palladium silicide and being self aligned to said conductive region; and a layer of interconnection metallization at least partially overlying said insulative layer and disposed in ohmic electrical contact with said contact enhancement layer in said opening, said interconnection metallization layer exhibiting a width which is approximately the same as or less than the width of said opening, at least in the vicinity of said opening to improve packing density.
Claim 28
Dependent Claim
111 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a contact enhancement layer selectively disposed in ohmic electrical contact with said conductive region of semiconductor material, and self aligned to said conductive region; and a layer of interconnection metallization at least partially overlying said contact enhancement layer and disposed in ohmic electrical contact with said contact enhancement layer, said interconnection metallization exhibiting a width which is approximately the same as or less than the width of said contact enhancement layer, at least in the vicinity of contact between said interconnection metallization and said contact enhancement layer to improve packing density.
Claim 29
Dependent Claim
111 words
A semiconductor device with improved metallization patterning, said device comprising: a conductive region of semiconductor material of one type conductivity; a contact enhancement layer selectively disposed in ohmic electrical contact with said conductive region of semiconductor material, and self aligned to said conductive region; and a layer of interconnection metallization at least partially overlying said contact enhancement layer and disposed in ohmic electrical contact with said contact enhancement layer, said interconnection metallization exhibiting a width which is approximately the same as or less than the width of said contact enhancement layer, at least in the vicinity of contact between said interconnection metallization and said contact enhancement layer to improve packing density.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-11 | 1993-12-11 | 1994-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-11 | 1997-12-11 | 1998-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-11 | 2001-12-11 | 2002-06-12 | $7700.00 | Window Closed / Lapsed |