Superlattice imaging device

Claim 2

A semiconductor imaging element for generating an electric signal representing the intensity of incident light comprising: a semiconductor substrate; an avalanche photodiode, having sequential p-type, intrinsic, and n-type layers, and including a compositional superlattice as said intrinsic layer, one of the p-type or n-type layers being oriented to receive incident light and produce photocarriers in response thereto, the compositional superlattice being disposed to receive said photocarriers and by impact ionization to create and convey a larger number of carriers to the other of said p-type or n-type layers, thereby to convert incident light to an amplified electrical signal; and switching means electrically connected to said photodiode for receiving and reading out said signal.

Claim 3

The imaging element of claim 1 wherein said photodiode at least partially overlies said switching means on said substrate.

Claim 4

The imaging element of claim 1 wherein said switching means is a transistor formed at least partly in said substrate.

Claim 5

The imaging element of claim 3 wherein said transistor is one of the group consisting of MOSFET, MESFET, and bipolar transistors.

Claim 6

The imaging element of claim 1 wherein said switching means comprises a charge coupled device.

Claim 7

The imaging element of claim 1 wherein said substrate is silicon and said superlattice includes alternating layers of GaAs and Al x Ga 1-x As.

Claim 8

The imaging element of claim 6 including a second compositional superlattice disposed between said intrinsic layer and said substrate as a distortion-relieving layer.

Claim 9

The imaging element of claim 7 wherein said second superlattice includes alternating layers of GaAs and Al y Ga 1-y As.

Claim 10

The imaging element of claim 1 wherein said superlattice includes alternating layers of hydrogenated amorphous silicon and hydrogenated amorphous silicon containing a band gap modifying agent chosen from the group consisting of nitrogen and carbon.

Claim 11

The imaging element of claim 1 wherein said substrate is GaAs and said superlattice includes alternating layers of GaAs and Al x Ga 1-x As.

Claim 12

The imaging element of claim 2 wherein said p-type layer of said photodiode is disposed for receiving light and said n-type layer of said photodiode also forms an active region of said switching means.

Claim 13

The imaging element of claim 2 wherein said n-type layer of said photodiode is a first n-type region formed in the substrate, said substrate being p-type, said p-type layer of said photodiode being oriented to receive the incident light, said switching means comprising said first n-type region as an electrode of a field effect transistor, a second n-type region in said substrate as a second electrode, and a gate disposed between said first and second n-type regions for establishing a path for the flow of electrons between said first and second n-type regions, and said p-type layer of said photodiode being positioned to substantially overlie said field effect transistor in such a way as to provide an aperture ratio approaching 100 percent.

Claim 14

The imaging element of claim 2 wherein said n-type layer of said photodiode is a first n-type region formed in the substrate, said substrate being p-type, and said switching means comprises said n-type region as the emitter of a bipolar transistor and including a p-type base formed in said substrate surrounding said emitter, and an n-type collector formed in said substrate surrounding said base.

Claim 15

The imaging element of claim 1 including a transparent, electrically conductive electrode disposed on said photodiode for transmitting incident light and for applying a voltage bias to said photodiode.

Claim 16

The imaging element of claim 1 including a metallic electrode disposed on a portion of said photodiode that receives incident light for applying a voltage bias to said photodiode.

Claim 17

A semiconductor imaging device for generating an electrical signal representing a two-dimensional picture of a material object comprising: a common substrate; a two-dimensional array of a plurality of imaging elements, each imaging element including an avalanche photodiode, having sequential p-type, intrinsic, and n-type layers and including a compositional superlattice as said intrinsic layer, one of the p-type or n-type layers being oriented to receive incident light and produce photocarriers in response thereto, the compositional superlattice being disposed to receive said photocarriers and by impact ionization to create and convey a larger number of carriers to the other of said p-type or n-type layers, thereby to convert incident light to an amplified electrical signal; and switching means electrically connected to a said photodiode for receiving and reading out said signal.

Claim 18

A semiconductor imaging device for generating an electrical signal representing a two-dimensional picture of a material object comprising: a common substrate; a two-dimensional array of a plurality of imaging elements, each imaging element including an avalanche photodiode, having sequential p-type, intrinsic, and n-type layers and including a compositional superlattice as said intrinsic layer, one of the p-type or n-type layers being oriented to receive incident light and produce photocarriers in response thereto, the compositional superlattice being disposed to receive said photocarriers and by impact ionization to create and convey a larger number of carriers to the other of said p-type or n-type layers, thereby to convert incident light to an amplified electrical signal; and switching means electrically connected to a said photodiode for receiving and reading out said signal.

Claim 19

The imaging device of claim 16 wherein each said photodiode at least partially overlies said respective switching means on said common substrate.

Claim 20

The imaging device of claim 16 wherein at least one of said switching means is a transistor formed at least partly in said common substrate.

Claim 21

The imaging device of claim 18 wherein said transistor is one of the group consisting of MOSFET, MESFET, and bipolar transistors.

Claim 22

The imaging device of claim 16 wherein at least one of said switching means comprises a charge coupled device.

Claim 23

The imaging device of claim 16 wherein said common substrate is silicon and at least one of said superlattices includes alternating layers of GaAs and Al x Ga 1-x As.

Claim 24

The imaging device of claim 21 wherein at least one of said imaging elements includes a second compositional superlattice disposed between said intrinsic layer of said photodiode and said substrate as a distortion-relieving layer.

Claim 25

The imaging device of claim 22 wherein said second superlattice includes alternating layers of GaAs and Al y Ga 1-y As.

Claim 26

The imaging device of claim 16 wherein said substrate is silicon and at least one of said superlattices includes alternating layers of hydrogenated amorphous silicon and hydrogenated amorphous silicon containing a band gap modifying agent chosen from the group consisting of nitrogen and carbon.

Claim 27

The imaging device of claim 16 wherein said substrate is GaAs and at least one of said superlattices includes alternating layers of GaAs and Al x Ga 1-x As.

Claim 28

The imaging device of claim 17 wherein the p-type layers of said photodiodes are disposed for receiving light and said n-type layers of said photodiodes form active regions in said substrate of said respective switching means.

Claim 29

The imaging device of claim 17 wherein said n-type layer of each of said photodiodes is formed as a first n-type region in the substrate, said substrate being p-type, said p-type layer of said photodiode being oriented to receive the incident light, and each of said respective switching means comprising said respective first n-type region as an electrode of a field effect transistor, a second n-type region in said substrate as a second electrode, and a gate disposed between said first and second regions for establishing a path for the flow of electrons between said first and second n-type regions, and said p-type layer of said photodiode being positioned to substantially overlie said field effect transistor in such a way as to provide an aperture ratio approaching 100 percent.

Claim 30

The imaging device of claim 17 wherein said n-type layer of said photodiode is a first n-type region formed in the substrate, said substrate being p-type, and said switching means comprises said respective n-type region as the emitter of a bipolar transistor and including a p-type base in said substrate surrounding said emitter, and an n-type collector in said substrate surrounding said base.

Claim 31

The imaging device of claim 16 wherein said imaging elements are mutually isolated from each other by air gaps.

Claim 32

The imaging device of claim 16 wherein said imaging elements are isolated from each other by at least one electrically insulating film.