US4933565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and apparatus for correcting defects of X-ray mask
Assignee: Hitachi Ltd
•
Filing: 1988-07-08
•
Granted: 1990-06-12
•
Expires: 2008-07-08
Abstract
Abstract The present invention relates to a method and apparatus for correcting defects of an X-ray mask which includes a focused ion beam used to irradiate at least a region having a defective portion of an X-ray mask having a protective film and eliminating the protective film; exposing a circuit pattern having a defective portion located under the region or setting this circuit pattern to the state near the exposure; detecting one of the secondary electrons, secondary ions, reflected electrons, or absorbing current generated from that region and detecting a true defective position. Then positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion thereby correcting the defect.
Inventors
- 👤 Hiroshi Yamaguchi
- 👤 Keiya Saito
- 👤 Mitsuyoshi Koizumi
- 👤 Akira Shimase
- 👤 Satoshi Haraichi
- 👤 Tateoki Miyauchi
- 👤 Shinji Kuniyoshi
- 👤 Susumu Aiuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 23:01
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/68; G03F1/72; G03F1/74; G03F1/22
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
187 words
A method of correcting defects of an X-ray mask comprising the steps of: forming a layer of stopping material on top of a circuit pattern of an X-ray mask having a flat surface wherein the X-ray mask further includes a protective film on said flat surface and wherein the stopping material has a lower sputtering rate than the protective film; irradiating with a focused ion beam a selected region of the X-ray mask having at least a defective portion wherein irradiating with the focused ion beam eliminates said protective film; exposing from the protective film the stopping material located on top of the circuit pattern having the defective portion located under said region wherein such exposing causes a difference in level of material removed between the stopping material and the protective film; detecting at least one of secondary electrons, secondary ions, reflected electrons, and absorbing current generated from said region having the defective portion thereby detecting a true defective position; positioning said focused, ion beam to said true defective position; and irradiating only the defective portion with the focused ion beam to thereby correct the defective portion.
Claim 2
Independent Claim
187 words
A method of correcting defects of an X-ray mask comprising the steps of: forming a layer of stopping material on top of a circuit pattern of an X-ray mask having a flat surface wherein the X-ray mask further includes a protective film on said flat surface and wherein the stopping material has a lower sputtering rate than the protective film; irradiating with a focused ion beam a selected region of the X-ray mask having at least a defective portion wherein irradiating with the focused ion beam eliminates said protective film; exposing from the protective film the stopping material located on top of the circuit pattern having the defective portion located under said region wherein such exposing causes a difference in level of material removed between the stopping material and the protective film; detecting at least one of secondary electrons, secondary ions, reflected electrons, and absorbing current generated from said region having the defective portion thereby detecting a true defective position; positioning said focused, ion beam to said true defective position; and irradiating only the defective portion with the focused ion beam to thereby correct the defective portion.
Claim 3
Dependent Claim
29 words
The method according to claim 1, wherein the protective film is eliminated by the irradiating of the focused ion beam to a depth detected by detecting an absorbing current.
Claim 4
Dependent Claim
25 words
The method according to claim 1, wherein the correction of the defect is performed by methods such as ion beam CVC, and ion beam deposition.
Claim 5
Dependent Claim
29 words
The method according to claim 3, wherein said circuit pattern is exposed or set to the state near the exposure by detecting the absorbing current to the X-ray mask.
Claim 6
Dependent Claim
25 words
The method according to claim 3, wherein the correction of the defect is performed by methods such as ion beam CVD, and ion beam deposition.
Claim 7
Dependent Claim
29 words
The method of claim 1, wherein the protective film is eliminated by the irradiating of the focused ion beam to a depth dependent upon a detected elapsed working time.
Claim 8
Independent Claim
112 words
A method of correcting defects of an X-ray mask comprising the steps of: irradiating with a focused ion beam at least a region having a defective portion of an X-ray mask a flat surfaced having a protective film and eliminating said protective film; exposing from under the protective film a circuit pattern having a defective portion located under said region or setting the circuit pattern to a state near the exposure; picking up an image of said region by a scanning electron microscope and detecting a true defective position; positioning the focused ion beam to said true defective position; irradiating the defective portion with the focused ion beam; and correcting the defect.
Claim 9
Independent Claim
112 words
A method of correcting defects of an X-ray mask comprising the steps of: irradiating with a focused ion beam at least a region having a defective portion of an X-ray mask a flat surfaced having a protective film and eliminating said protective film; exposing from under the protective film a circuit pattern having a defective portion located under said region or setting the circuit pattern to a state near the exposure; picking up an image of said region by a scanning electron microscope and detecting a true defective position; positioning the focused ion beam to said true defective position; irradiating the defective portion with the focused ion beam; and correcting the defect.
Claim 10
Independent Claim
132 words
A method of correcting defects of an X-ray mask having a protective film covered flat surface comprising the steps of: irradiating with a focused ion beam an X-ray mask having a fine pattern covered by a protective film while scanning the focused ion beam, and eliminating a part of said protective film; irradiating with an electron beam the X-ray mask a part of which was eliminated while scanning the electron beam, and extracting an image signal of the fine pattern covered by the protective film; irradiating with the focused ion beam the X-ray mask a part of which was eliminated while scanning the focused ion beam, and extracting an image signal of the X-ray mask; and combining said two kinds of image signals and working the defective portion of the fine pattern.
Claim 11
Independent Claim
132 words
A method of correcting defects of an X-ray mask having a protective film covered flat surface comprising the steps of: irradiating with a focused ion beam an X-ray mask having a fine pattern covered by a protective film while scanning the focused ion beam, and eliminating a part of said protective film; irradiating with an electron beam the X-ray mask a part of which was eliminated while scanning the electron beam, and extracting an image signal of the fine pattern covered by the protective film; irradiating with the focused ion beam the X-ray mask a part of which was eliminated while scanning the focused ion beam, and extracting an image signal of the X-ray mask; and combining said two kinds of image signals and working the defective portion of the fine pattern.
Claim 12
Dependent Claim
29 words
The method according to claim 8, wherein the protective film is eliminated by the irradiating of the focused ion beam to a depth detected by an elapsed working time.
Claim 13
Dependent Claim
28 words
The method of claim 8, wherein the protective film is eliminated by the irradiating of the focused ion beam to a depth dependent upon a detected absorbing current.
Claim 14
Independent Claim
221 words
A method of correcting defects of an X-ray mask having a flat surface with a protective film on said flat surface comprising the steps of: forming a protective film on a circuit pattern of the X-ray mask flat surface; eliminating by irradiating with an ion beam, an area of the protective film wherein the area eliminated has a width larger than a defective portion of the circuit pattern and a depth which does not expose the circuit pattern under the protective film; applying an electronic beam to the X-ray mask in order to obtain a first image of the X-ray mask, wherein the first image includes the area of the protective film which has been eliminated, the circuit pattern, and the defective portion of the circuit pattern located within the area of the eliminated protective layer; applying an ion beam to the X-ray mask in order to obtain a second image of the X-ray mask wherein, the second image includes the area of the protective layer which has been eliminated; superimposing the first and second images to obtain a precise location of the defective portion; focusing the ion beam on the precise location of the defective portion; irradiating with the ion beam only the defective portion to thereby correct the defect; and filling in the area of the protective film eliminated.
Claim 15
Independent Claim
221 words
A method of correcting defects of an X-ray mask having a flat surface with a protective film on said flat surface comprising the steps of: forming a protective film on a circuit pattern of the X-ray mask flat surface; eliminating by irradiating with an ion beam, an area of the protective film wherein the area eliminated has a width larger than a defective portion of the circuit pattern and a depth which does not expose the circuit pattern under the protective film; applying an electronic beam to the X-ray mask in order to obtain a first image of the X-ray mask, wherein the first image includes the area of the protective film which has been eliminated, the circuit pattern, and the defective portion of the circuit pattern located within the area of the eliminated protective layer; applying an ion beam to the X-ray mask in order to obtain a second image of the X-ray mask wherein, the second image includes the area of the protective layer which has been eliminated; superimposing the first and second images to obtain a precise location of the defective portion; focusing the ion beam on the precise location of the defective portion; irradiating with the ion beam only the defective portion to thereby correct the defect; and filling in the area of the protective film eliminated.
References Cited (Backward Citations)
JPS56332A
Cited
US4503329A
Cited
US4609809A
Cited
US4609809B1
Cited
US4623256A
Cited
EP0168056A2
Cited
US4683378A
Cited
US4751169A
Cited
US4748327A
Cited
US4696878A
Cited
EP1090149A1
Cited
EP1109375A2
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-06-11 | 1993-12-11 | 1994-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-06-11 | 1997-12-11 | 1998-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-06-11 | 2001-12-11 | 2002-06-12 | $7700.00 | Window Closed / Lapsed |