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US4931425A
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Process for chemical vapor deposition of superconductive oxide
Assignee: Fujitsu Ltd
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Filing: 1988-09-27
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Granted: 1990-06-05
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Expires: 2008-09-27
Abstract
Abstract A thin film of a high temperature superconductive oxide of rare earth metal-alkali earth metal-copper-oxygen system or group VA metal-alkali earth metal-copper-oxygen system, which has an excellent crystallinity, particularly a single crystalline structure, is formed on a substrate by a CVD method, in which halides of the metals and an oxygen source gas are separately flowed over a substrate and caused to react with each other over the substrate, to deposit a desired superconducting oxide film.
Inventors
- 👤 Takafumi Kimura
- 👤 Hideki Yamawaki
- 👤 Kazuto Ikeda
- 👤 Masaru Ihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 07:15
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/408; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0436; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/73
Claims Analysis
Total Claims: 64
Claim 1
Independent Claim
404 words
A process for chemical vapor deposition of an oxide superconductive film on a substrate, wherein the substrate is held in a reaction chamber and heated to a first temperature in a range from 750° to 1200° C., said process comprising the steps of: (a) flowing a mixture of vapors introduced at a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a halide of a rare earth metal, one of an alkali earth metal selected from the group consisting of magnesium, calcium, strontium and barium or the corresponding halide thereof, and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of 700° to 1200° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (b) heating the rare earth metal halide at a temperature of 630° to 750° C. to form a vapor of the rare earth metal halide; (c) heating the alkali earth metal or alkali earth metal halide at a temperature of 600° to 1100° C. to form a vapor of the alkali earth metal or alkali earth metal halide; (d) heating the copper halide at a temperature of 300° to 600° C. to form a vapor of the copper halide, the heating temperatures used for vaporizing the components being less than the first temperature; (e) arranging the three vapor sources of the rare earth metal halide, the alkali earth metal or halide thereof and the copper halide, in a passage such that the copper halide vapor source is the farthest upstream and the vapor source of the alkali earth metal or the halide thereof is the farthest downstream in the passage; (f) heating the passage increasingly from upstream to downstream to the second temperature; (g) flowing a carrier gas over the vapor sources in the passage downstream toward the substrate; (h) introducing an oxygen source gas at position over the substrate in the reaction chamber, the vapor mixture and oxygen oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas come into contact with each other and are heated to the first temperature to cause a reaction between the vapor mixture and the oxygen source gas; and (i) depositing a superconducting oxide of a rare earth metal-alkali earth metal-copper-oxygen system on the substrate.
Claim 2
Dependent Claim
404 words
A process for chemical vapor deposition of an oxide superconductive film on a substrate, wherein the substrate is held in a reaction chamber and heated to a first temperature in a range from 750° to 1200° C., said process comprising the steps of: (a) flowing a mixture of vapors introduced at a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a halide of a rare earth metal, one of an alkali earth metal selected from the group consisting of magnesium, calcium, strontium and barium or the corresponding halide thereof, and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of 700° to 1200° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (b) heating the rare earth metal halide at a temperature of 630° to 750° C. to form a vapor of the rare earth metal halide; (c) heating the alkali earth metal or alkali earth metal halide at a temperature of 600° to 1100° C. to form a vapor of the alkali earth metal or alkali earth metal halide; (d) heating the copper halide at a temperature of 300° to 600° C. to form a vapor of the copper halide, the heating temperatures used for vaporizing the components being less than the first temperature; (e) arranging the three vapor sources of the rare earth metal halide, the alkali earth metal or halide thereof and the copper halide, in a passage such that the copper halide vapor source is the farthest upstream and the vapor source of the alkali earth metal or the halide thereof is the farthest downstream in the passage; (f) heating the passage increasingly from upstream to downstream to the second temperature; (g) flowing a carrier gas over the vapor sources in the passage downstream toward the substrate; (h) introducing an oxygen source gas at position over the substrate in the reaction chamber, the vapor mixture and oxygen oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas come into contact with each other and are heated to the first temperature to cause a reaction between the vapor mixture and the oxygen source gas; and (i) depositing a superconducting oxide of a rare earth metal-alkali earth metal-copper-oxygen system on the substrate.
Claim 3
Dependent Claim
50 words
A process according to claim 1, wherein the superconductive oxide is represented by the formula X 1 Z 2 CuO x where X stands for at least one rare earth metal, Z stands for at least one alkali earth metal, and x has a value different from the stoichiometric value.
Claim 4
Dependent Claim
17 words
A process according to claim 1, wherein the mixture of vapors is carried by a carrier gas.
Claim 5
Dependent Claim
18 words
A process according to claim 1, wherein the oxygen source gas further contains hydrogen as a reaction accelerator.
Claim 6
Dependent Claim
24 words
A process according to claim 1, wherein the oxygen source gas is selected from the group consisting of oxygen, carbon dioxide and water vapor.
Claim 7
Dependent Claim
29 words
A process according to claim 1, wherein the rare earth halide is yttrium chloride and the yttrium chloride is heated at a temperature of from 650° to 750° C.
Claim 8
Dependent Claim
21 words
A process according to claim 6, wherein the yttrium chloride is heated at a temperature of from 675° to 725° C.
Claim 9
Dependent Claim
30 words
A process according to claim 1, wherein the alkali earth metal halide is calcium iodide and the calcium iodide is heated at a temperature of from 700° to 900° C.
Claim 10
Dependent Claim
21 words
A process according to claim 8, wherein the calcium iodide is heated at a temperature of from 750° to 850° C.
Claim 11
Dependent Claim
30 words
A process according to claim 1, wherein the alkali earth metal halide is strontium iodide and the strontium iodide is heated at a temperature of from 750° to 950° C.
Claim 12
Dependent Claim
21 words
A process according to claim 10, wherein the strontium iodide is heated at a temperature of from 775° to 850° C.
Claim 13
Dependent Claim
30 words
A process according to claim 1, wherein the alkali earth metal halide is barium iodide and the barium iodide is heated at a temperature of from 850° to 1050° C.
Claim 14
Dependent Claim
21 words
A process according to claim 12, wherein the barium iodide is heated at a temperature of from 900° to 1000° C.
Claim 15
Dependent Claim
30 words
A process according to claim 1, wherein the alkali earth metal halide is barium chloride and the barium chloride is heated at a temperature of from 950° to 1100° C.
Claim 16
Dependent Claim
21 words
A process according to claim 14, wherein the barium chloride is heated at a temperature of from 1000° to 1050° C.
Claim 17
Dependent Claim
30 words
A process according to claim 1, wherein the alkali earth metal halide is magnesium chloride and the magnesium chloride is heated at a temperature of from 700° to 850° C.
Claim 18
Dependent Claim
23 words
A process according to claim 16, wherein the source of magnesium chloride is heated at a temperature of from 750° to 800° C.
Claim 19
Dependent Claim
28 words
A process according to claim 1, wherein the copper halide is copper chloride and the copper halide is heated at a temperature of from 300° to 500° C.
Claim 20
Dependent Claim
21 words
A process according to claim 19, wherein the copper chloride is heated at a temperature of from 350° to 400° C.
Claim 21
Dependent Claim
28 words
A process according to claim 1, wherein the copper halide is copper bromide and the copper bromide is heated at a temperature of from 350° to 500° C.
Claim 22
Dependent Claim
21 words
A process according to claim 20, wherein the copper bromide is heated at a temperature of from 400° to 450° C.
Claim 23
Dependent Claim
28 words
A process according to claim 1, wherein the copper halide is copper iodide and the copper iodide is heated at a temperature of from 400° to 600° C.
Claim 24
Dependent Claim
21 words
A process according to claim 22, wherein the copper iodide is heated at a temperature of from 450° to 550° C.
Claim 25
Dependent Claim
28 words
A process according to claim 1, wherein the alkali earth metal is barium and the barium metal is heated at a temperature of from 600° to 800° C.
Claim 26
Dependent Claim
21 words
A process according to claim 24, wherein the barium metal is heated at a temperature of from 650° to 750° C.
Claim 27
Dependent Claim
71 words
A process according to claim 1, wherein the three vapor sources of the rare earth metal halide, the alkali earth metal halide or the alkali earth metal, and the copper halide are arranged in separate passages and heated to the temperatures of 630°-750° C., 600°-1100° C. and 300°-600° C., respectively in the respective passages, the passages being directed toward the substrate, and carrier gases flowing through the passages toward the substrate.
Claim 28
Dependent Claim
82 words
A process according to claim 26, wherein the passages of the three vapor sources of the rare earth metal halide, the alkali earth metal halide or the alkali earth metal, and the copper halide pass through a furnace having first to third zones in the direction of the flow of the carrier gases, the three sources being arranged in the first to third zones on a one-to-one basis, the first to third zones having temperatures increasing from the first to third zones.
Claim 29
Dependent Claim
15 words
A process according to claim 1, wherein the substrate is of single crystalline magnesium oxide.
Claim 30
Dependent Claim
39 words
A process according to claim 1, wherein the substrate has a buffer layer on a surface thereof, the buffer layer being of one selected from the group consisting of magnesium oxide, barium fluoride, and magnesium spinel on silicon substrate.
Claim 31
Dependent Claim
392 words
A process for chemical vapor deposition of an oxide superconductive film on a substrate, wherein the substrate is held in a reaction chamber and heated to a first temperature in a range of 750° to 1100° C., said process comprising the steps of: (a) introducing a mixture of vapors to a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a halide of a group VA metal, halides of two alkali earth metals selected from the group consisting of magnesium, calcium, strontium and barium, and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of 700° to 1100° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (b) heating the halide of the group VA metal at a temperature of 150° to 250° C. to form a vapor of the halide of the group VA metal; (c) heating the two alkali earth metal halides at temperatures of 600° to 1100° C. to form vapors of the alkali earth metal halides; (d) heating the copper halide at a temperature of 300° to 600° C. to form a vapor of the copper halide, the heating temperatures used for vaporizing the components being less than said first temperature; (e) arranging the four vapor sources of the halide of the group VA metal, the halides of two alkali earth metals and the copper halide in a passage such that the vapor source of the halide of the group VA metal is the farthest upstream and the vapor sources of the two alkali earth metal halide are farthest downstream in the passage; (f) heating the passage increasingly from upstream to downstream to the second temperature; (g) flowing a carrier gas over the vapor sources in the passage downstream toward the substrate; (h) introducing an oxygen source gas at a position over the substrate in the reaction chamber, the vapor mixture and the oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas contact each other and are heated to the first temperature to cause a reaction therebetween; and (j) depositing a superconductive oxide of a group VA metal--an alkali earth metal--an alkali earth metal-copper-oxide system on the substrate.
Claim 32
Dependent Claim
392 words
A process for chemical vapor deposition of an oxide superconductive film on a substrate, wherein the substrate is held in a reaction chamber and heated to a first temperature in a range of 750° to 1100° C., said process comprising the steps of: (a) introducing a mixture of vapors to a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a halide of a group VA metal, halides of two alkali earth metals selected from the group consisting of magnesium, calcium, strontium and barium, and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of 700° to 1100° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (b) heating the halide of the group VA metal at a temperature of 150° to 250° C. to form a vapor of the halide of the group VA metal; (c) heating the two alkali earth metal halides at temperatures of 600° to 1100° C. to form vapors of the alkali earth metal halides; (d) heating the copper halide at a temperature of 300° to 600° C. to form a vapor of the copper halide, the heating temperatures used for vaporizing the components being less than said first temperature; (e) arranging the four vapor sources of the halide of the group VA metal, the halides of two alkali earth metals and the copper halide in a passage such that the vapor source of the halide of the group VA metal is the farthest upstream and the vapor sources of the two alkali earth metal halide are farthest downstream in the passage; (f) heating the passage increasingly from upstream to downstream to the second temperature; (g) flowing a carrier gas over the vapor sources in the passage downstream toward the substrate; (h) introducing an oxygen source gas at a position over the substrate in the reaction chamber, the vapor mixture and the oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas contact each other and are heated to the first temperature to cause a reaction therebetween; and (j) depositing a superconductive oxide of a group VA metal--an alkali earth metal--an alkali earth metal-copper-oxide system on the substrate.
Claim 33
Dependent Claim
68 words
A process according to claim 30, wherein the superconductive oxide is represented by the formula QZ 1 Z 2 Cu y O 3 , where Q stands for a metal of the VA group of the periodic table, Z 1 and Z 2 stand for an alkali earth metal, y has a value of about 2 or about 1.5, x has a value different from the stoichiometric value.
Claim 34
Dependent Claim
17 words
A process according to claim 30, wherein the mixture of vapors is carried by a carrier gas.
Claim 35
Dependent Claim
18 words
A process according to claim 30, wherein the oxygen source gas further contains hydrogen as a reaction accelerator.
Claim 36
Dependent Claim
24 words
A process according to claim 30, wherein the oxygen source gas is selected from the group consisting of oxygen, carbon dioxide and water vapor.
Claim 37
Dependent Claim
38 words
A process according to claim 28, wherein the halide of the metal of the VA group of the periodic table is bismuth halide and the bismuth halide is heated to a temperature of from 150° to 250° C.
Claim 38
Dependent Claim
21 words
A process according to claim 35, wherein the bismuth halide is heated to a temperature of from 170° to 200° C.
Claim 39
Dependent Claim
32 words
A process according to claim 30, wherein one of the alkali earth metal halides is calcium iodide and the calcium iodide is heated at a temperature of from 700° to 900° C.
Claim 40
Dependent Claim
21 words
A process according to claim 37, wherein the calcium iodide is heated at a temperature of from 750° to 850° C.
Claim 41
Dependent Claim
32 words
A process according to claim 30, wherein one of the alkali earth metal halides is strontium iodide and the strontium iodide is heated at a temperature of from 750° to 950° C.
Claim 42
Dependent Claim
21 words
A process according to claim 39, wherein the strontium iodide is heated at a temperature of from 775° to 850° C.
Claim 43
Dependent Claim
32 words
A process according to claim 30, wherein one of the alkali earth metal halide is barium iodide and the barium iodide is heated at a temperature of from 850° to 1050° C.
Claim 44
Dependent Claim
21 words
A process according to claim 41, wherein the barium iodide is heated at a temperature of from 900° to 1000° C.
Claim 45
Dependent Claim
32 words
A process according to claim 30, wherein one of the alkali earth metal halide is barium chloride and the barium chloride is heated at a temperature of from 950° to 1100° C.
Claim 46
Dependent Claim
21 words
A process according to claim 43, wherein the barium chloride is heated at a temperature of from 1000° to 1050° C.
Claim 47
Dependent Claim
31 words
A process according to claim 30, wherein one of the alkali earth metal halide is magnesium chloride and the magnesium is heated at a temperature of from 700° to 850° C.
Claim 48
Dependent Claim
21 words
A process according to claim 45, wherein the magnesium chloride is heated at a temperature of from 750° to 800° C.
Claim 49
Dependent Claim
28 words
A process according to claim 30, wherein the copper halide is copper chloride and the copper halide is heated at a temperature of from 300° to 500° C.
Claim 50
Dependent Claim
21 words
A process according to claim 47, wherein the copper chloride is heated at a temperature of from 350° to 400° C.
Claim 51
Dependent Claim
28 words
A process according to claim 30, wherein the copper halide is copper bromide and the copper bromide is heated at a temperature of from 350° to 500° C.
Claim 52
Dependent Claim
21 words
A process according to claim 49, wherein the copper bromide is heated at a temperature of from 400° to 450° C.
Claim 53
Dependent Claim
27 words
A process according to claim 30, wherein the copper halide is copper iodide the copper iodide is heated at a temperature of from 400° to 600° C.
Claim 54
Dependent Claim
21 words
A process according to claim 51, wherein the copper iodide is heated at a temperature of from 450° to 550° C.
Claim 55
Dependent Claim
71 words
A process according to claim 30, wherein the four vapor sources of the halide of the metal of the VA group, the alkali earth metal halides, and the copper halide are arranged in separate passages and heated to the temperatures of 150°-250° C., 600°-1100° C. and 300°-600° C. temperatures respectively in the respective passages, the passages being directed toward the substrate, and carrier gases flowing through the passages toward the substrate.
Claim 56
Dependent Claim
82 words
A process according to claim 53, wherein the passages of the four vapor sources of the halide of the metal of the VA group, the alkali earth metal halides, and the copper halide pass through a furnace having first to fourth zones in the direction of the flow of the carrier gases, the four sources being arranged in the first to fourth zones on a one-to-one basis, the temperatures of the first to fourth zones increasing from the first to fourth zones.
Claim 57
Dependent Claim
15 words
A process according to claim 30, wherein the substrate is of single crystalline magnesium oxide.
Claim 58
Dependent Claim
37 words
A process according to claim 30, wherein the substrate has a buffer-layer on a surface thereof, the buffer layer being of one selected from the group consisting of magnesium oxide, barium fluoride, and magnesium spinel on silicon.
Claim 59
Dependent Claim
330 words
A process for a chemical vapor deposition of an oxide superconductive film, comprising the steps of: (a) holding a substrate in a reaction chamber and heating the substrate to a first temperature in a range of 750° to 1200° C.; (b) introducing a mixture of vapors at a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a yttrium chloride, one of an alkali earth metal or the corresponding halide thereof, and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of 600° to 1100° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (c) heating the yttrium chloride at a temperature of 675° to 725° C. to form a vapor of the yttrium chloride; (d) heating one of the alkali earth metal halide and the halide thereof selected from calcium iodide at a temperature between 750°-850° C., strontium iodide at a temperature between 775°-850° C., barium iodide at a temperature between 900°-1000° C., barium chloride at a temperature between 1000°-1050° C., magnesium chloride at a temperature between 750°-800° C. and barium at a temperature between 650°-750° C., to form a vapor of the alkali earth metal or the halide thereof; (e) heating the copper halide selected form copper chloride at a temperature between 350°-400° C., copper bromide at a temperature between 400°-450° C. and copper iodide at a temperature between 450°-550° C., to form a vapor of the copper halide; (f) introducing an oxygen source gas at a position over the substrate in the reaction chamber, the vapor mixture and the oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas contact each other and are heated to the first temperature to cause a reaction therebetween; and (g) depositing a superconductive oxide of yttrium-alkali earth metal-copper-oxygen system on the substrate.
Claim 60
Dependent Claim
330 words
A process for a chemical vapor deposition of an oxide superconductive film, comprising the steps of: (a) holding a substrate in a reaction chamber and heating the substrate to a first temperature in a range of 750° to 1200° C.; (b) introducing a mixture of vapors at a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a yttrium chloride, one of an alkali earth metal or the corresponding halide thereof, and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of 600° to 1100° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (c) heating the yttrium chloride at a temperature of 675° to 725° C. to form a vapor of the yttrium chloride; (d) heating one of the alkali earth metal halide and the halide thereof selected from calcium iodide at a temperature between 750°-850° C., strontium iodide at a temperature between 775°-850° C., barium iodide at a temperature between 900°-1000° C., barium chloride at a temperature between 1000°-1050° C., magnesium chloride at a temperature between 750°-800° C. and barium at a temperature between 650°-750° C., to form a vapor of the alkali earth metal or the halide thereof; (e) heating the copper halide selected form copper chloride at a temperature between 350°-400° C., copper bromide at a temperature between 400°-450° C. and copper iodide at a temperature between 450°-550° C., to form a vapor of the copper halide; (f) introducing an oxygen source gas at a position over the substrate in the reaction chamber, the vapor mixture and the oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas contact each other and are heated to the first temperature to cause a reaction therebetween; and (g) depositing a superconductive oxide of yttrium-alkali earth metal-copper-oxygen system on the substrate.
Claim 61
Dependent Claim
153 words
A process according to claim 57, wherein said step (h) of heating the rare earth metal is formed by heating a source of yttrium chloride at a temperature between 675°-725° C., wherein said step (i) of heating one of the alkali earth metal and the alkali earth metal halide is formed by heating a source of calcium iodide at a temperature between 750°-850° C., strontium iodide at a temperature between 775°-850° C., barium iodide at a temperature between 900°-1000° C., barium chloride at a temperature between 1000°-1050° C., magnesium chloride at a temperature between 750°-800° C., and barium at a temperature between 650°-750° C., and wherein said step (j) of heating copper halide for forming a vapor of copper halide is formed by heating a source of copper chloride at a temperature between 300°-500° C., copper bromide at a temperature between 400°-450° C., and copper iodide at a temperature between 450° -550° C.
Claim 62
Dependent Claim
306 words
A process for chemical vapor deposition of an oxide superconductive film, comprising the steps of: (a) holding a substrate in a reaction chamber and heating the substrate to a temperature in a range of approximately 750°-1100° C.; (b) introducing a mixture of vapors at a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a halide of bismuth, halides of two alkali earth metals and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of approximately 150°-1100° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (c) heating the bismuth halide at a temperature between 170°-200° C. to form a vapor of the halide of bismuth; (d) heating the halides of the two alkali earth metals selected from calcium iodide at a temperature between 750°-850° C., strontium iodide at a temperature between 775°-850° C., barium chloride at a temperature between 1000°-1050° C., and magnesium chloride at a temperature between 750°-800° C., to form vapors of the two alkali earth metal halides; and (e) heating the copper halide selected from copper chloride at a temperature between 350°-400° C., copper bromide at a temperature between 400°-450° C., and copper iodide at a temperature between 450°-550° C., to form a vapor of the copper halide; (f) introducing an oxygen source gas at a position over the substrate in the reaction chamber, the vapor mixture and the oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas contact each other and are heated to the first temperature to cause a reaction therebetween; and (g) depositing a superconductive oxide of bismuth- an alkali earth metal--an alkali earth metal-copper-oxygen system on the substrate.
Claim 63
Dependent Claim
306 words
A process for chemical vapor deposition of an oxide superconductive film, comprising the steps of: (a) holding a substrate in a reaction chamber and heating the substrate to a temperature in a range of approximately 750°-1100° C.; (b) introducing a mixture of vapors at a position over the substrate in the reaction chamber, said mixture of vapors consisting essentially of a halide of bismuth, halides of two alkali earth metals and a halide of copper, at a second temperature equal to or less than the first temperature and being in a range of approximately 150°-1100° C.; wherein said mixture of vapors introduced into the reaction chamber is formed by: (c) heating the bismuth halide at a temperature between 170°-200° C. to form a vapor of the halide of bismuth; (d) heating the halides of the two alkali earth metals selected from calcium iodide at a temperature between 750°-850° C., strontium iodide at a temperature between 775°-850° C., barium chloride at a temperature between 1000°-1050° C., and magnesium chloride at a temperature between 750°-800° C., to form vapors of the two alkali earth metal halides; and (e) heating the copper halide selected from copper chloride at a temperature between 350°-400° C., copper bromide at a temperature between 400°-450° C., and copper iodide at a temperature between 450°-550° C., to form a vapor of the copper halide; (f) introducing an oxygen source gas at a position over the substrate in the reaction chamber, the vapor mixture and the oxygen source gas being separated from each other until they approach a point near the substrate at which the vapor mixture and the oxygen source gas contact each other and are heated to the first temperature to cause a reaction therebetween; and (g) depositing a superconductive oxide of bismuth- an alkali earth metal--an alkali earth metal-copper-oxygen system on the substrate.
Claim 64
Dependent Claim
155 words
A process according to claim 59, wherein said step (h) of forming a vapor of the halide of a group VA metal is formed by heating a source of bismuth halide at a temperature between 170°-200° C., wherein said step (i) of heating the two alkali earth metal halides to form vapors of the two alkali earth metal halides are formed by heating sources of one of calcium iodide at a temperature between 770°-850° C., strontium iodide at a temperature of 775°-850° C., barium iodide at a temperature between 900°-1000° C., barium chloride at a temperature between 1000°-1050° C. and magnesium at a temperature between 750°-800°, and wherein said step (j) of heating copper halide to form vapors of copper halide is formed by heating a source of one of copper chloride at a temperature between 350°-400° C., copper bromide at a temperature between 400°-450° C., or copper iodide at a temperature between 450°-550° C.
References Cited (Backward Citations)
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