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US4929984A
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Resonant tunnelling barrier structure device
Assignee: Fujitsu Ltd
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Filing: 1988-11-01
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Granted: 1990-05-29
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Expires: 2008-11-01
Abstract
Abstract A resonant tunnelling barrier (RTB) structure device (e.g., diode), having a large peak-to-valley current density (Jp/Jv) ratio, includes an InP substrate and a RTB structure structure. The RTB structure is formed by a first doped layer of InP or In 0 .53 GA 0 .47 As, a first barrier layer of Al x Ga 1-x As y Sb 1-y (0≦x≦1, y=0.51+0.05x), a well layer of InP or In z Ga 1-z As (0.52≦z≦0.54), a second barrier layer of the AlGaAsSb, and a second doped layer of InP or In z Ga 1-z As. The layers of the RTB structure are lattice-matched to InP.
Inventors
- 👤 Shunichi Muto
- 👤 Tsuguo Inata
- 👤 Atsushi Takeuchi
- 👤 Yoshihiro Sugiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:36
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/70; H10D8/755; B; B82; B82Y; B82Y10/00; H10D62/00; H10D62/80; H10D62/82; H10D62/824
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
95 words
A resonant tunnelling barrier structure device comprising: an InP substrate; and a resonant tunnelling barrier structure formed on said InP substrate and consisting of at least two barrier layers of Al x Ga 1-x As-ySb 1-y (0≦x≦1, y=0.51+0.05x), at least one well layer of InP or In z Ga 1-z As (0.52≦z≦0.54) sandwiched between said barrier layers, and two doped layers of InP or In z Ga 1-z As holding all of said barrier layers and said well layer therebetween, said barrier layers, well layers and doped layers being lattice-matched to InP of said substrate.
Claim 2
Dependent Claim
95 words
A resonant tunnelling barrier structure device comprising: an InP substrate; and a resonant tunnelling barrier structure formed on said InP substrate and consisting of at least two barrier layers of Al x Ga 1-x As-ySb 1-y (0≦x≦1, y=0.51+0.05x), at least one well layer of InP or In z Ga 1-z As (0.52≦z≦0.54) sandwiched between said barrier layers, and two doped layers of InP or In z Ga 1-z As holding all of said barrier layers and said well layer therebetween, said barrier layers, well layers and doped layers being lattice-matched to InP of said substrate.
Claim 3
Dependent Claim
20 words
A device according to claim 1, wherein the mole fraction "x" of said barrier layers is from 0.35 to 1.
Claim 4
Dependent Claim
41 words
A device according to claim 1, wherein said resonant tunnelling barrier structure further comprises two undoped spacer layers of InP or In z Ga 1-z As, each of said layers being formed between said doped layers and said barrier layers, respectively.
Claim 5
Dependent Claim
125 words
A resonant tunnelling barrier structure device comprising: an InP substrate; a first doped layer of InP or In z Ga 1-z As (0.52≦z≦0.54) formed on said InP substrate and lattice-matched to InP; a first barrier layer of Al x Ga 1-x As y Sb 1-y (0≦x≦1, y=0.51+0.05x) formed on said first doped layer and lattice-matched to InP; a well layer of InP or In z Ga 1-z As formed on said first barrier layer and lattice-matched to InP; a second barrier layer of Al x Ga 1-x As y Sb 1-y (0≦x≦1, y=0.51+0.05x) formed on said well layer and lattice-matched to InP; and a second doped layer of InP or In z Ga 1-z As formed on said second barrier layer and lattice-matched to InP.
Claim 6
Dependent Claim
125 words
A resonant tunnelling barrier structure device comprising: an InP substrate; a first doped layer of InP or In z Ga 1-z As (0.52≦z≦0.54) formed on said InP substrate and lattice-matched to InP; a first barrier layer of Al x Ga 1-x As y Sb 1-y (0≦x≦1, y=0.51+0.05x) formed on said first doped layer and lattice-matched to InP; a well layer of InP or In z Ga 1-z As formed on said first barrier layer and lattice-matched to InP; a second barrier layer of Al x Ga 1-x As y Sb 1-y (0≦x≦1, y=0.51+0.05x) formed on said well layer and lattice-matched to InP; and a second doped layer of InP or In z Ga 1-z As formed on said second barrier layer and lattice-matched to InP.
Claim 7
Dependent Claim
23 words
A device according to claim 4, wherein the mole fraction "x" of said first and second barrier layers is from 0.35 to 1.
Claim 8
Dependent Claim
57 words
A device according to claim 4, further comprising a first undoped spacer layer of InP or In z Ga 1-z As formed between said first doped layer and said first barrier layer, and a second undoped spacer layer of InP or In z Ga 1-z As formed between said second barrier layer and said second doped layer.
Claim 9
Dependent Claim
79 words
A device according to claim 4, further comprising a first contact layer of InP or In z Ga 1-z As formed between said InP substrate and said first doped layer, a second contact layer of InP or In z Ga 1-z As formed on said second doped layer, a first electrode formed on said first contact layer, a second electrode formed on said second contact layer, and a means for applying a voltage across said first and second electrodes.
References Cited (Backward Citations)
US4712121A
Cited
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