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US4929566A
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Method of making dielectrically isolated integrated circuits using oxygen implantation and expitaxial growth
Assignee: Intersil Corp
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Filing: 1989-07-06
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Granted: 1990-05-29
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Expires: 2009-07-06
Abstract
Abstract A method includes forming an oxide layer on the substrate of a first thickness and patterning the insulative layer to form the laterally dielectric walls in exposed island areas of the substrate. The islands are epitaxially grown on the exposed surface of the substrate to a second thickness to form the laterally dielectrically isolated islands. For totally dielectrically isolated islands, the second thickness is less than the first thickness and a horizontal dielectric isolation is formed in the epitaxial layer by ion implanting oxygen. This is followed by increasing the island thickness to the first thickness by further epitaxial growth.
Inventors
- 👤 Bruce A. Beitman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:43
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1908; H10W10/011; H10W10/014; H10W10/17
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
121 words
A method of forming an integrated circuit having laterally dielectrically isolated islands comprising: forming a first insulative layer of a first thickness on a substrate; patterning said first insulating layer to form lateral dielectric walls and exposed island areas of said substrate; epitaxially growing islands of a first conductivity type on exposed island areas of said substrate to a second thickness less than said first thickness; implanting an oxygen into said epitaxial island to form a horizontal dielectric isolation wall extending lateral between said lateral dielectric walls and displaced from a top surface of said epitaxial island to form totally dielectrically isolated islands; and epitaxially increasing the total thickness of said islands to said first thickness subsequent to implanting said oxygen.
Claim 2
Independent Claim
121 words
A method of forming an integrated circuit having laterally dielectrically isolated islands comprising: forming a first insulative layer of a first thickness on a substrate; patterning said first insulating layer to form lateral dielectric walls and exposed island areas of said substrate; epitaxially growing islands of a first conductivity type on exposed island areas of said substrate to a second thickness less than said first thickness; implanting an oxygen into said epitaxial island to form a horizontal dielectric isolation wall extending lateral between said lateral dielectric walls and displaced from a top surface of said epitaxial island to form totally dielectrically isolated islands; and epitaxially increasing the total thickness of said islands to said first thickness subsequent to implanting said oxygen.
Claim 3
Dependent Claim
26 words
A method according to claim 1, including selectively introducing second conductivity type impurities into selected islands to change said selected islands to said second conductivity type.
Claim 4
Dependent Claim
17 words
A method according to claim 2, wherein said second conductivity type impurities are introduced by ion implantation.
Claim 5
Dependent Claim
14 words
A method according to claim 1, wherein said patterning is performed by plasma etching.
Claim 6
Dependent Claim
35 words
A method according to claim 4, including oxidizing said exposed areas of said substrate to form a sacrificial oxide and chemically etching to remove said sacrificial oxide to expose fresh island areas of said substrate.
Claim 7
Dependent Claim
26 words
A method according to claim 2, including introducing second conductivity type impurities into selected islands of said second thickness which is less than said first thickness.
Claim 8
Dependent Claim
22 words
A method according to claim 1, wherein said epitaxially growing steps are performed selectively to grow only on said exposed island areas.
Claim 9
Dependent Claim
26 words
A method according to claim 1, wherein said epitaxially growing steps are performed non-selectively and including removing epitaxially grown material from over said lateral dielectric walls.
Claim 10
Dependent Claim
16 words
A method according to claim 8, wherein removing includes grinding down to said lateral dielectric walls.
References Cited (Backward Citations)
US4255207A
Cited
US4412868A
Cited
JPS5955035A
Cited
US4566914A
Cited
JPS60144950A
Cited
US4612701A
Cited
WO1987001239A1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-28 | 1993-11-27 | 1994-05-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-28 | 1997-11-27 | 1998-05-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-28 | 2001-11-27 | 2002-05-29 | $7700.00 | Window Closed / Lapsed |