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US4929301A Expired / Lapsed US ⏱️ 0.0 years remaining

Anisotropic etching method and etchant

Assignee: International Business Machines Corp
•
Filing: 1986-06-18
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Granted: 1990-05-29
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Expires: 2006-06-18
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Abstract

Abstract The present invention is directed toward an improved etching solution which is a five component system and does not use ethylene-diamine. This etch will preferentially etch lightly doped, single crystalline silicon at an etch rate of 0.6 microns per minute ±0.05 microns per minute and will effectively stop at a selectively doped level in the silicon body being etched because the etch rate of this selectively doped level drops from 0.6 microns per minute to between 0.001 microns per minute and 0.0006 microns per minute. The etch is comprised of ethanol-amine, piperidine, water, pyrocatechol and 30% hydrogen peroxide. The solution preferably consists of 28 mls. ethanol-amine, 2 mls. piperidine, 5.5 mls. water, 5.5 grams pyrocatechol and 0.25 mls. hydrogen peroxide. If desired a trace of a long chain surfactant can be added to the solution.

Inventors

  • 👤 Nicholas Beechko

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 07:24
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/126; H10P50/00; H10P50/60; H10P50/64; H10P50/642; H10P50/644

Claims Analysis

Total Claims: 11
Claim 1
Independent Claim 46 words
A method for etching silicon including the steps of preparing an etch solution comprising: preparing an ethylene-diamine free etch solution comprising ethanol-amine, pyrocatechol, water, piperidine and hydrogen peroxide, applying said etch solution to said silicon at temperatures for time sufficient to affect a desired etched pattern.
Claim 2
Independent Claim 46 words
A method for etching silicon including the steps of preparing an etch solution comprising: preparing an ethylene-diamine free etch solution comprising ethanol-amine, pyrocatechol, water, piperidine and hydrogen peroxide, applying said etch solution to said silicon at temperatures for time sufficient to affect a desired etched pattern.
Claim 3
Dependent Claim 13 words
The method according to claim 1 wherein said hydrogen peroxide is 30% solution.
Claim 4
Dependent Claim 28 words
The method of claim 2 wherein the solution comprises 925 mls. ethanol-amine, 66 mls. piperidine, 181 mls. water, 181 grams pyrocatechol, and 8.5 mls. of 30% hydrogen peroxide.
Claim 5
Dependent Claim 16 words
The method of claim 1 wherein said solution is heated to a temperature of 125±1° C.
Claim 6
Dependent Claim 11 words
An etch solution comprising ethanol-amine, piperidine, water, pyrocatechol and hydrogen peroxide.
Claim 7
Dependent Claim 11 words
An etch solution comprising ethanol-amine, piperidine, water, pyrocatechol and hydrogen peroxide.
Claim 8
Dependent Claim 45 words
An etch solution free of ethylene-diamine wherein 925 mls. ethanol-amine, 66 mls. piperidine, 181 mls. water, and 181 grams pyrocatechol is heated to approximately 70° C. until the pyrocatechol is completely in solution, adding 8.5 mls. hydrogen peroxide and heating said solution to 125° C.
Claim 9
Dependent Claim 45 words
An etch solution free of ethylene-diamine wherein 925 mls. ethanol-amine, 66 mls. piperidine, 181 mls. water, and 181 grams pyrocatechol is heated to approximately 70° C. until the pyrocatechol is completely in solution, adding 8.5 mls. hydrogen peroxide and heating said solution to 125° C.
Claim 10
Dependent Claim 36 words
An etch solution free of ethylene-diamine for etching silicon comprising approximately 55 mole percent of ethanol-amine, approximately 2.3 mode percent of piperidine, approximately 5.8 mole percent of pyrocatechol, and approximately 1 mole percent of hydrogen peroxide.
Claim 11
Dependent Claim 36 words
An etch solution free of ethylene-diamine for etching silicon comprising approximately 55 mole percent of ethanol-amine, approximately 2.3 mode percent of piperidine, approximately 5.8 mole percent of pyrocatechol, and approximately 1 mole percent of hydrogen peroxide.

References Cited (Backward Citations)

US3457107A Cited
US3650957A Cited
US3873203A Cited
US4229979A Cited
US4293373A Cited
US4342817A Cited
US4417946A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-05-28 1993-11-27 1994-05-29 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-05-28 1997-11-27 1998-05-29 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-05-28 2001-11-27 2002-05-29 $7700.00 Window Closed / Lapsed

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