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US4928156A
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N-channel MOS transistors having source/drain regions with germanium
Assignee: NXP USA Inc
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Filing: 1989-03-06
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Granted: 1990-05-22
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Expires: 2009-03-06
Abstract
Abstract Metal-oxide-semiconductor (MOS) transistors with n-type source/drain regions also having germanium-doped regions in or near the source/drains. The presence of germanium near or at the location of phosphorus in graded source drains (GSDs), lightly doped drains (LDDs) and double diffused drains (DDDs) gives a better profile of the drain region with a reduced junction depth than that obtainable with phosphorus or particularly phosphorus and arsenic together. Good grading of the drain junction to avoid hot carrier instability or hot carrier injection problems is obtained along with shallow source junctions, which minimizes lateral dopant diffusion and decreases the distance between n - and n + regions in GSDs and LDDs.
Inventors
- 👤 John R. Alvis
- 👤 James R. Pfiester
- 👤 Orin W. Holland
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 05:56
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/0227; H10D30/60; H10D30/601; H10D30/605; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/60; H10D62/80; H10D62/83; H10D62/834; H10P30/208; Y; Y10; Y10S; Y10S257/00; Y10S257/919
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
126 words
An n-channel MOSFET having at least one source or drain region improved with germanium, comprising: a semiconductor substrate having a surface; a thin dielectric layer on the surface of the semiconductor substrate; a patterned gate of conductive material on the thin dielectric layer, where the gate has opposite sides; and source and drain regions in the semiconductor substrate on the opposite sides of and beneath the gate, defining a channel in the semiconductor substrate between the source and drain regions, where at least one of the source and drain regions has germanium atoms in a first region, and phosphorus atoms in a second region of the semiconductor substrate, where said first region and said second region are in a relationship but not coextensive with each other.
Claim 2
Dependent Claim
126 words
An n-channel MOSFET having at least one source or drain region improved with germanium, comprising: a semiconductor substrate having a surface; a thin dielectric layer on the surface of the semiconductor substrate; a patterned gate of conductive material on the thin dielectric layer, where the gate has opposite sides; and source and drain regions in the semiconductor substrate on the opposite sides of and beneath the gate, defining a channel in the semiconductor substrate between the source and drain regions, where at least one of the source and drain regions has germanium atoms in a first region, and phosphorus atoms in a second region of the semiconductor substrate, where said first region and said second region are in a relationship but not coextensive with each other.
Claim 3
Dependent Claim
18 words
The n-channel MOSFET of claim 1 wherein the channel has a length equal to one micron or less.
Claim 4
Dependent Claim
13 words
The n-channel MOSFET of claim 1 wherein the semiconductor substrate is monocrystalline silicon.
Claim 5
Dependent Claim
124 words
An n-channel MOSFET having source and drain regions improved with germanium, comprising: a semiconductor substrate having a surface; a thin dielectric layer on the surface of the semiconductor substrate; a patterned gate of conductive material on the thin dielectric layer, where the gate has opposite sides; and source and drain regions in the semiconductor substrate defining a channel in the semiconductor substrate between the source and drain regions, where the source and drain regions include a first n - region doped with phosphorus and aligned with the opposite sides of the gate and a second n 30 region doped with arsenic and germanium, with the second n + region overlapping the first n - region but spaced away from the sides of the gate.
Claim 6
Dependent Claim
124 words
An n-channel MOSFET having source and drain regions improved with germanium, comprising: a semiconductor substrate having a surface; a thin dielectric layer on the surface of the semiconductor substrate; a patterned gate of conductive material on the thin dielectric layer, where the gate has opposite sides; and source and drain regions in the semiconductor substrate defining a channel in the semiconductor substrate between the source and drain regions, where the source and drain regions include a first n - region doped with phosphorus and aligned with the opposite sides of the gate and a second n 30 region doped with arsenic and germanium, with the second n + region overlapping the first n - region but spaced away from the sides of the gate.
Claim 7
Dependent Claim
157 words
An n-channel MOSFET having at least one source/drain region improved with germanium, comprising: a semiconductor substrate having a surface; a thin dielectric layer on the surface of the semiconductor substrate; a patterned gate of conductive material on the thin dielectric layer, where the gate has opposite sides; n - source/drain regions in the semiconductor substrate aligned to the opposite sides of and beneath the gate, defining a channel in the semiconductor substrate between the source/drain regions, where the n - source/drain regions are doped with phosphorus only; at least one sidewall spacer at the side of the gate; and an n + source/drain region in the semiconductor substrate aligned to the sidewall spacer on the side of the gate, overlapping but not coextensive with one of the n - source/drain regions, where the n + source/drain region is doped with germanium and an n-type dopant selected from the group consisting of phosphorus, arsenic and a combination thereof.
Claim 8
Dependent Claim
157 words
An n-channel MOSFET having at least one source/drain region improved with germanium, comprising: a semiconductor substrate having a surface; a thin dielectric layer on the surface of the semiconductor substrate; a patterned gate of conductive material on the thin dielectric layer, where the gate has opposite sides; n - source/drain regions in the semiconductor substrate aligned to the opposite sides of and beneath the gate, defining a channel in the semiconductor substrate between the source/drain regions, where the n - source/drain regions are doped with phosphorus only; at least one sidewall spacer at the side of the gate; and an n + source/drain region in the semiconductor substrate aligned to the sidewall spacer on the side of the gate, overlapping but not coextensive with one of the n - source/drain regions, where the n + source/drain region is doped with germanium and an n-type dopant selected from the group consisting of phosphorus, arsenic and a combination thereof.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1993-05-21 | 1993-11-20 | 1994-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-21 | 1997-11-20 | 1998-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-21 | 2001-11-20 | 2002-05-22 | $7700.00 | Window Closed / Lapsed |