Microelectronic field ionizer and method of fabricating the same

Claim 2

A microelectronic field ionizer comprising a planer substrate; means at a surface of said substrate defining a gas outlet, said means defining said gas outlet being capable of maintaining a first electric potential at said outlet; and a first electrically conductive material on said substrate spaced but adjacent said outlet providing a counterelectrode for a second, different electric potential to create an electrostatic field at said outlet for ionizing gas thereat.

Claim 3

The microelectronic field ionizer of claim 1 wherein the edge of said gas outlet is generally annular and has a thickness of less than about 500 Å, and said outlet has a diameter of about one-half micron.

Claim 4

The microelectronic field ionizer of claim 1 wherein the closest spacing between any portion of said means defining said gas outlet and said first conductive material providing said counterelectrode is greater than the distance necessary to cause an electrical breakdown when said ionizer is operating between said means and said material at the pressure of gases within said spacing.

Claim 5

The microelectronic field ionizer of claim 3 further including a potential source for applying a potential difference between said means and said material which, is less than that necessary at said closest spacing to cause an electrical breakdown as aforesaid, irrespective of the pressure of the gases within said spacing.

Claim 6

The microelectronic field ionizer of claim 3 wherein said spacing is in the range of between one-tenth and one micron.

Claim 7

The microelectronic field ionizer of claim 1 wherein a passage for gas to be ionized extends through said substrate from a second surface thereof to the one at which said gas outlet is defined.

Claim 8

The microelectronic field ionizer of any of the previous claims wherein said means defines an array of said gas outlets at said substrate surface, and said electrically conductive material is a layer of said material having apertures which register with each of said outlets to thereby provide respectively for each of the same, a counterelectrode for a second, different electric potential to create electrostatic fields at the gas outlets of said array for ionizing gas thereat.

Claim 11

The method of claim 8 of fabricating a field ionizer wherein said planer substrate is a semiconductive material, further including the step of forming an insulating layer between it and said electrically conductive material.

Claim 12

The method of claim 8 for fabricating a field ionizer wherein said step of forming a gas outlet at said surface of said substrate comprises the steps of forming an aperture through said substrate to said surface at the location desired for said gas outlet; and forming through said aperture with a second electrically conductive material, a gas outlet at said one surface of said substrate having a diameter in the range of between 0.1 and 1 microns and a generally annular edge having a thickness of less than about 1,000 Å.

Claim 13

The method of claim 10 for fabricating a field ionizer wherein said gas outlet is formed by applying said second electrically conductive material through said aperture from a surface opposite the surface thereof at which said gas outlet is desired.

Claim 14

The method of claim 10 of fabricating a field ionizer wherein said step of forming said gas outlet further comprises the steps of forming an insulating layer on said surface of said substrate between said first material and said substrate; forming a via through said first material and said insulating layer in registration with said aperture in said substrate; applying a removable closure material at said via over said insulating layer and said first electrically conductive material; applying a second electrically conductive material to said closure material through said aperture extending through said substrate; and thereafter removing said closure material to expose said first electrically conductive material and form a free-standing, generally thin edge of said second electrically conductive material at said gas outlet.

Claim 15

The method of claim 10 of fabricating a field ionizer wherein said step of forming said gas outlet further comprises the steps of forming an insulating layer on said surface of said substrate between said first material and said substrate; forming a via through said first material and said insulating layer in registration with said aperture in said substrate; removing said first material from adjacent the edges of said insulating layer at said via; and applying a second electrically conductive material through said aperture to said edges of said insulating layer; and thereafter removing a portion of said insulating layer at said edge to form a free-standing, generally thin edge of said second electrically conductive material at said gas outlet.

Claim 17

In a field ionizer having a structure defining a gas outlet that is capable of maintaining a first electrical potential at said outlet and a counterelectrode adjacent said outlet capable of maintaining a second different electrical potential for ionizing gas at said outlet, the improvement comprising a layer of conductive material providing said counterelectrode on the same structure as that defining said gas outlet.

Claim 18

In a field ionizer having a structure defining a gas outlet that is capable of maintaining a first electrical potential at said outlet and a counterelectrode adjacent said outlet capable of maintaining a second different electrical potential for ionizing gas at said outlet, the improvement comprising a layer of conductive material providing said counterelectrode on the same structure as that defining said gas outlet.