Patent US4924807A successfully refreshed from Google Patents.
US4924807A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Apparatus for chemical vapor deposition
Assignee: Ulvac Inc
•
Filing: 1987-07-24
•
Granted: 1990-05-15
•
Expires: 2007-07-24
Abstract
Abstract An apparatus for a chemical vapor deposition in which at least one substrate which has partially an insulating film on the surface thereof is disposed in a pressure reduced reaction chamber, the reaction chamber is provided with a nozzle for feeding a reactive gas into the reaction chamber, and a light source is provided for emitting a light beam to heat the substrate. The apparatus has provision for feeding a second gas opposite the substrate to put the reactive gas in the vicinity of the substrate surface into laminar flow. The combination of substrate heating source using infrared rays and the laminarized jet of reactive gas is utilized for maintaining the selectivity, facilitating the thin film forming reaction, and obtaining improved high reproducibility and controllability.
Inventors
- 👤 Izumi Nakayama
- 👤 Akitoshi Suzuki
- 👤 Hiroyuki Nawa
- 👤 Motohiro Kaneko
- 👤 Yoshiro Kusumoto
- 👤 Kazuo Takakuwa
- 👤 Tetsuya Ikuta
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:52
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45519; C23C16/48; C23C16/481; H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
107 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber having means for supporting at least one substrate; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposed to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 2
Independent Claim
107 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber having means for supporting at least one substrate; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposed to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 3
Dependent Claim
151 words
An apparatus according to claim 1, wherein said substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface thereof with a first metal film, said first gas comprises a gas containing a metal element and a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, and a temperature difference is created between said electrical insulating film and said first metal film on the surface of said substrate by the difference in a light absorptivity of the body of said substrate, said electrical insulating film and said first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film of said metal element is formed on the surface of the first metal film.
Claim 4
Dependent Claim
226 words
An apparatus according to claim 1, wherein said substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface of said substrate with no electrical insulating film, said first gas comprises a gas containing a metal element and/or a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, at least said gas containing the metal element is introduced into said reaction chamber under reduced pressure to form a first metal film including said metal element on the portion of the surface of said substrate formed with no electrical insulating film, and after formation of said first metal film, said gas containing the metal element and said reducing gas are introduced into said reaction chamber and said each substrate is irradiated by the light beam from said light beam emitting means to create a temperature difference between said electrical insulating film and said first metal film thus formed by the difference in a light absorptivity of the body of said substrate, the electrical insulating film and the first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film is formed on the surface of the first metal film.
Claim 5
Dependent Claim
26 words
An apparatus according to claim 2 wherein the metal element which constitutes said first metal film is the same as that of said second metal film.
Claim 6
Dependent Claim
25 words
An apparatus according to claim 2 wherein the metal element which constitutes said first metal film is different from that of said second metal film.
Claim 7
Dependent Claim
63 words
An apparatus according to claim 2 wherein said reducing gas is H 2 , and said first gas containing the metal element is any one or more metallic halides selected from the group consisting of WF 6 , MoF 6 , TaF 5 , CrF 4 , TiF 4 , TiCl 4 , MoCl 5 , MCl 6 , and AlCl 3 .
Claim 8
Dependent Claim
61 words
An apparatus according to claim 2 wherein said electrical insulating film on the surface of the substrate is formed of any one or more oxides selected from the group consisting of SiO 2 , Al 2 O 3 , BSG, PSG, BPSG, and nitrides selected from the group consisting of BN and SiN x , and SiN x O y .
Claim 9
Dependent Claim
36 words
An apparatus according to claim 2 wherein said first metal film is formed of any one or more metals selected from the group consisting of W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au and Ni.
Claim 10
Dependent Claim
29 words
An apparatus according to claim 2 wherein said first metal film is formed of any one or more selected from the group consisting of metallic silicides, and metallic nitrides.
Claim 11
Dependent Claim
26 words
An apparatus according to claim 2 wherein said substrate is made of any one of Si, SiO 2 , Al 2O 3 , glass, or sapphire.
Claim 12
Dependent Claim
41 words
An apparatus according to claim 2 wherein said substrate is made of any one of Si, SiO 2 , Al 2 O 3 , glass or sapphire, which is provided with a thin film of Si on the uppermost layer thereof.
Claim 13
Dependent Claim
29 words
An apparatus according to claim 1 wherein said light beam emitting means comprises at least one high intensity lamp which radiates heat energy at a wavelength of approximately 0.75-5μm.
Claim 14
Dependent Claim
38 words
An apparatus according to claim 12, wherein said lamp is positioned outside of the reaction chamber, the light beam from the lamp being transmitted through a transparent window provided on the reaction chamber wall into the reaction chamber.
Claim 15
Dependent Claim
37 words
An apparatus according to claim 1, further comprising means for optically, filtering the light beam from the light beam emitting means, said filter means being interposed between the light beam emitting means and the reaction chamber wall.
Claim 16
Independent Claim
117 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber; means for supporting at least one substrate in said reaction chamber and having means for heating said substrate; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposite to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 17
Independent Claim
117 words
An apparatus for a chemical vapor deposition, comprising a pressure reduced reaction chamber; means for supporting at least one substrate in said reaction chamber and having means for heating said substrate; means for feeding a first gas substantially parallel to the surface of said substrate under reduced pressure in a sheet-like flow; means for feeding a second gas opposite to the surface of said substrate to put said first gas flow into a laminar flow state in the vicinity of said substrate; and means for emitting a light beam to heat said substrate in said reaction chamber; thereby producing a chemical reaction to form a thin film having the component of said first gas on said substrate.
Claim 18
Dependent Claim
151 words
An apparatus according to claim 15, wherein said substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface thereof with a first metal film, said first gas comprises a gas containing a metal element and a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, and a temperature difference is created between said electrical insulating film and said first metal film on the surface of said substrate by the difference in a light absorptivity of the body of said substrate, said electrical insulating film and said first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film of said metal element is formed on the surface of the first metal film.
Claim 19
Dependent Claim
225 words
An apparatus according to claim 15, wherein said substrate is formed at a portion of the surface thereof with an electrical insulating film and is formed at the other portion of the surface of said substrate no electrical insulating film, said first gas comprises a gas containing a metal element and/or a reducing gas, said second gas comprises an inert gas or a gas containing the inert gas as a main component, at least said gas containing the metal element is introduced into said reaction chamber under reduced pressure to form a first metal film including said metal element on the portion of the surface of said substrate formed with no electrical insulating film, and after formation of said first metal film, said gas containing the metal element and said reducing gas are introduced into said reaction chamber and said each substrate is irradiated by the light beam from said light beam emitting means to create a temperature difference between said electrical insulating film and said first metal film thus formed by the difference in a light absorptivity of the body of said substrate, the electrical insulating film and the first metal film, thereby causing the chemical reaction to occur only on the surface of said first metal film so that a second metal film is formed on the surface of the first metal film.
Claim 20
Dependent Claim
26 words
An apparatus according to claim 16, wherein the metal element which constitutes said first metal film is the same as that of said second metal film.
Claim 21
Dependent Claim
25 words
An apparatus according to claim 16, wherein the metal element which constitutes said first metal film is different from that of said second metal film.
Claim 22
Dependent Claim
63 words
An apparatus according to claim 16 wherein said reducing gas is H 2 , and said first gas containing the metal element is any one or more metallic halides selected from the group consisting of WF 6 , MoF 6 , TaF 5 , CrF 4 , TiF 4 , TiCl 4 , MoCl 5 , WCl 6 , and AlCl 3 .
Claim 23
Dependent Claim
60 words
An apparatus according to claim 16 wherein said electrical insulating film on the surface of the substrate is formed of any one or more oxides selected from the group consisting of SiO 2 , Al 2 O 3 , BSG, PSG, and BPSG, nitrides selected from the group consisting of BN and SiN x and SiN x O y .
Claim 24
Dependent Claim
36 words
An apparatus according to claim 16 wherein said first metal film is formed of any one or more metals selected from the group consisting of W, Mo, Ta, Cr, Ti, Al, Pt, Pd, Au, and Ni.
Claim 25
Dependent Claim
43 words
An apparatus according to claim 16 wherein said first metal film is formed of any one or more metallic silicides selected from the group consisting of WSi x , TiSi x , TaSi x , MoSi x and PtSi x , and TiN.
Claim 26
Dependent Claim
25 words
An apparatus according to claim 16 wherein said each substrate is made of Si, SiO 2 , Al 2 O 3 , glass or sapphire.
Claim 27
Dependent Claim
38 words
An apparatus according to claim 17 wherein said substrate is made of Si, SiO 2 , Al 2 O 3 , glass or sapphire, which is provided with a thin film of Si on the uppermost layer thereof.
Claim 28
Dependent Claim
29 words
An apparatus according to claim 15, wherein said light beam emitting means comprises at least one high intensity lamp which radiates heat energy at a wavelength of approximately 0.75-5μm.
Claim 29
Dependent Claim
38 words
An apparatus according to claim 26, wherein said lamp is positioned outside of the reaction chamber, the light beam from the lamp being transmitted through a transparent window provided on the reaction chamber wall into the reaction chamber.
Claim 30
Dependent Claim
37 words
An apparatus according to claim 15, further comprising means for optically filtering the light beam from the light beam emitting means, said filtering means being interposed between the light beam emitting means and the reaction chamber wall.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-05-14 | 1993-11-13 | 1994-05-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-05-14 | 1997-11-13 | 1998-05-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-05-14 | 2001-11-13 | 2002-05-15 | $7700.00 | Window Closed / Lapsed |