Crystal growth method

Claim 2

A process for making large single crystals of a material comprising the steps of introducing into a boron nitride crucible a relatively small monocrystalline seed crystal of the material and a quantity of the material in polycrystalline form, heating the crucible to melt the quantity of material, and freezing the material such that at least a major part of the frozen material extends as a single crystal from the seed crystal, characterized in that; prior to the introduction of the quantity of polycrystalline material into the crucible, essentially all of that part of the inner surface of the crucible with which the quantity of material makes contact is reacted to form a layer of boric oxide.

Claim 3

The process of claim 1 further characterized in that the crucible is made of pyrolytic boron nitride, and the boric oxide substantially completely melts during the step of heating the crucible to melt the quantity of polycrystalline material.

Claim 4

The process of claim 2 further characterized in that the oxide layer is made by thermally oxidizing a major portion of the inner surface of the boron nitride crucible.

Claim 5

The process of claim 3 further characterized in that the crucible contains a seed well portion designed to hold the seed crystal, and steps are taken to assure that substantially no part of the seed well portion and substantially no part of the outer surface of the crucible are thermally oxidized.

Claim 6

The process of claim 4 further characterized in that the crucible comprises a substantially cylindrical major portion connected by a frusto-conical portion to the seed well portion, and the inner surface of the major portion and the frusto-conical portion are thermally oxidized by heating the crucible while using an oxygen-transmitting tube to expose selectively portions of the crucible to oxygen while directing inert gas over the outer surface of the crucible.

Claim 7

The process of claim 5 further characterized in that the oxygen-transmitting tube extends through an open end of the cylindrical major portion of the crucible and expels oxygen in the direction of the seed well portion, and part of the inert gas is directed into an open end of the cylindrical seed well portion to prevent oxidation of the inner surface of the seed well portion.

Claim 8

The process of claim 1 further characterized in that the material is a Group III-V compound material.

Claim 9

The process of claim 7 further characterized in that the material is gallium arsenide.

Claim 10

The process of claim 5 further characterized in that the process for making single crystals is a vertical gradient freeze process in which the crucible axis extends in the vertical direction with the seed well portion at the bottom thereof, and, during the freezing step, there are significant temperature gradients in the vertical direction in the seed well, the frusto-conical portion, and the major portion, the vertical temperature gradient is greater in the seed well portion than in the frusto-conical portion, and the vertical temperature gradient in the frusto-conical portion is greater than that in the major portion.

Claim 11

The process of claim 9 further characterized in that the material is a Group III-V compound material.

Claim 12

The process of claim 6 further characterized in that the inert gas is nitrogen gas, which is contained by a cylinder that surrounds the crucible during the thermal oxidation step, an annular element having the same diameter as the major portion of the crucible is abutted against the open-end of the major portion of the crucible during the thermal oxidation step.

Claim 13

The process of claim 6 further characterized in that a cover encloses most of the open-end of the major portion of the crucible during the thermal oxidation step.

Claim 14

A VGF process for making single crystals of a compound semiconductor comprising the steps of forming a crucible to have a seed well portion at a bottom end, a major cylindrical portion at a top end, and a transition portion between the seed well and major portions, introducing a monocrystalline seed crystal into the seed well portion, introducing a quantity of raw material into the major and transition portions of the cylinder, heating the crucible to melt the raw material and part of the seed crystal, and freezing the molten material by introducing temperature gradients in the vertical direction in the seed well, transition and major portions, the vertical temperature gradient being larger in the seed well portion than in the transition portion, the vertical temperature gradient in the transition portion being greater than in the major portion, and the temperature gradients being selected such as to cause progressive solidification of the material on the seed crystal in a vertically upward direction, characterized in that prior to the introduction of the quantity of raw material into the crucible, substantially all of that part of the inner surface of the crucible with which the quantity of raw material makes contact is reacted to form a layer of a boric oxide.

Claim 15

A VGF process for making single crystals of a compound semiconductor comprising the steps of forming a crucible to have a seed well portion at a bottom end, a major cylindrical portion at a top end, and a transition portion between the seed well and major portions, introducing a monocrystalline seed crystal into the seed well portion, introducing a quantity of raw material into the major and transition portions of the cylinder, heating the crucible to melt the raw material and part of the seed crystal, and freezing the molten material by introducing temperature gradients in the vertical direction in the seed well, transition and major portions, the vertical temperature gradient being larger in the seed well portion than in the transition portion, the vertical temperature gradient in the transition portion being greater than in the major portion, and the temperature gradients being selected such as to cause progressive solidification of the material on the seed crystal in a vertically upward direction, characterized in that prior to the introduction of the quantity of raw material into the crucible, substantially all of that part of the inner surface of the crucible with which the quantity of raw material makes contact is reacted to form a layer of a boric oxide.

Claim 16

The process of claim 13 further characterized in that the compound semiconductor is a Group III-V compound.

Claim 17

The process of claim 14 further characterized in that the crucible is made of pyrolytic boron nitride, and the oxide layer is made by thermally oxidizing a major portion of the inner surface of the crucible.

Claim 18

The process of claim 15 further characterized in that steps are taken to assure that substantially no part of the seed well portion and substantially no part of the outer surface of the crucible are thermally oxidized.

Claim 19

The process of claim 16 further characterized in that the inner surface of the major portion and the inner surface of the transition portion are thermally oxidized by heating the crucible while using an oxygen-transmitting tube to expose selectively those inner surface portions of the crucible to oxygen.

Claim 20

The process of claim 17 further characterized in that the oxygen-transmitting tube extends through an open end of the major portion of the crucible and expels oxygen in the direction of the seed well portion, and inert gas is directed into an open end of the seed well portion and over the outer surface of the crucible so as to prevent oxidation of the inner surface of the seed well portion and the entire outer surface of the crucible.