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US4922290A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor exposing system having apparatus for correcting change in wavelength of light source

Assignee: Hitachi Ltd
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Filing: 1988-10-05
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Granted: 1990-05-01
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Expires: 2008-10-05
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Abstract

Abstract The invention relates to a semiconductor exposing system for projecting a pattern of a mask onto a semiconductor wafer and, more particularly, to such a system having an apparatus for correcting an influence on the resolution by a fluctuation in wavelength of a laser light source. The system of the invention comprises: a laser light source; an optical projecting system for projecting a laser beam emitted from the laser light source onto the semiconductor wafer through the mask; and an apparatus for receiving a part of the laser beam emitted from the laser light source, for detecting the wavelength fluctuation, and for correcting the position and magnification of the optical projecting system in accordance with the wavelength fluctuation value or an apparatus for correcting the refractive index of the optical projecting system.

Inventors

  • 👤 Yasuhiro Yoshitake
  • 👤 Yoshitada Oshida

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 12:48
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/7055; G03F7/70575; G03F7/70216; G03F7/70258; G03F7/708; G03F7/70808; G03F7/70841; G03F7/70858; G03F7/70883

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 195 words
An exposure apparatus for exposing a circuit pattern of a mask onto a surface of a substrate by an excimer laser beam comprising: an excimer laser source for generating the excimer laser beam; an illumination optical system for illuminating the circuit pattern of the mask with the excimer laser beam from said excimer laser source; a reduction projection lens for projecting the circuit pattern of the mask onto the substrate with said illuminating excimer laser beam, said illuminating excimer laser beam being passed through the circuit pattern of the mask so as to focus onto a pupil surface of the reduction projection lens, said reduction projection lens being formed by a material incapable of correcting chromatic aberration; a measuring means for measuring a change amount Δλ of a wavelength of the excimer laser beam emitted from said excimer laser source; and control means for controlling position of an image plane on which said circuit pattern of the mask is projected through said reduction projection lens by said illuminating excimer laser beam and an image magnification of said circuit pattern of the mask projecting through said reduction projection lens in accordance with said change amount Δλ.
Claim 2
Dependent Claim 195 words
An exposure apparatus for exposing a circuit pattern of a mask onto a surface of a substrate by an excimer laser beam comprising: an excimer laser source for generating the excimer laser beam; an illumination optical system for illuminating the circuit pattern of the mask with the excimer laser beam from said excimer laser source; a reduction projection lens for projecting the circuit pattern of the mask onto the substrate with said illuminating excimer laser beam, said illuminating excimer laser beam being passed through the circuit pattern of the mask so as to focus onto a pupil surface of the reduction projection lens, said reduction projection lens being formed by a material incapable of correcting chromatic aberration; a measuring means for measuring a change amount Δλ of a wavelength of the excimer laser beam emitted from said excimer laser source; and control means for controlling position of an image plane on which said circuit pattern of the mask is projected through said reduction projection lens by said illuminating excimer laser beam and an image magnification of said circuit pattern of the mask projecting through said reduction projection lens in accordance with said change amount Δλ.
Claim 3
Dependent Claim 99 words
An exposure apparatus according to claim 1, wherein said control means includes a first moving means for moving said substrate by a first amount calculated by a calculating means in accordance with said change amount Δλ, said first moving means moving said substrate in a direction of an optical axis of the reduction projection lens, and a second moving means for moving said mask by a second amount calculated by said calculating means in accordance with said change amount Δλ, said second moving means moving said mask in said direction of an optical axis of the reduction projection lens.
Claim 4
Dependent Claim 89 words
An exposure apparatus according to claim 1, wherein said control means includes a first moving means for moving said substrate by a first amount calculated by a calculating means in accordance with said change amount Δλ, said first moving means moving said substrate in a direction of an optical axis of the reduction projection lens, and a second moving means for moving an auxiliary lens provided between said reduction projection lens and said mask by a second amount in said direction of optical axis of the reduction projection lens.
Claim 5
Dependent Claim 45 words
An exposure apparatus according to claim 1, wherein said control means includes correcting means for correcting a refractive index of the reduction projection lens by controlling partial pressures of a plurality of gases having different refractive indices which are filled around said reduction projection lens.
Claim 6
Dependent Claim 71 words
An exposure apparatus according to claim 1, wherein said reduction projection lens includes a plurality of lenses and a container for enclosing said plurality of lenses and a plurality of gases having different refractive indices, said plurality of gases being filled among said plurality of lenses, said control means also including correcting means for correcting a refractive index of the reduction projection lens by controlling partial pressures of said plurality gases.
Claim 7
Dependent Claim 15 words
An exposure apparatus according to claim 1, wherein said material is comprised of synthetic quartz.
Claim 8
Dependent Claim 31 words
An exposure apparatus according to claim 1, wherein said control means includes means for moving said substrate so that a projecting surface of said substrate is aligned with said image plane.

References Cited (Backward Citations)

EP0066053A1 Cited
US4703166A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-04-30 1993-10-30 1994-05-01 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-04-30 1997-10-30 1998-05-01 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-04-30 2001-10-30 2002-05-01 $7700.00 Window Closed / Lapsed

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