US4920077A
Expired / Lapsed
US
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Method of manufacturing monolythic integrated circuits
Assignee: STMicroelectronics SRL
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Filing: 1988-09-27
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Granted: 1990-04-24
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Expires: 2008-09-27
Abstract
Abstract A method is disclosed wherein monolythic integrated circuit undergo a so-called aluminum annealing process step and so-called passivation step carried out within a deposition reactor of the PECVD type at a temperature of 420° to 450° C. and a pressure of 1 to 1.5 Torr. Applications of this method results in an increased electrical yield of the circuits produced and a reduction of their manufacturing costs.
Inventors
- 👤 Marco Mora
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 08:34
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S438/00; Y10S438/909
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
49 words
A method of manufacturing monolythic integrated circuits, comprising a process step of aluminum annealing and a process step of final passivation, characterized in that said steps are carried out at least in part simultaneously at a pressure of 1 to 1.5 Torr and a temperature of about 450° C.
Claim 2
Independent Claim
49 words
A method of manufacturing monolythic integrated circuits, comprising a process step of aluminum annealing and a process step of final passivation, characterized in that said steps are carried out at least in part simultaneously at a pressure of 1 to 1.5 Torr and a temperature of about 450° C.
Claim 3
Dependent Claim
19 words
A method according to claim 1, characterized in that said steps are carried out within a PECVD deposition reactor.
Claim 4
Independent Claim
165 words
A method of manufacturing monolythic integrated circuits, comprising the successive steps of: feeding said circuits into a PECVD deposition reactor; providing, inside said reactor, an inert atmosphere controlled at a pressure of about 1.5 Torr, by a nitrogen stream infeed; initiating an aluminum annealing treatment by raising the temperature to a value of about 450° C. and injecting a stream of SiH 4 and N 2 ; initiating, after a predetermined time period and while continuing the aluminum annealing treatment, a deposition of a passivating film, following further lowering of the pressure down to about 1 Torr, by the infeed of a stream of SiH 4 , PH 3 , Argon, and NO, and concurrent generation of a deposition plasma therefrom; flushing the interior of said reactor by the infeed of a nitrogen stream; and unloading, at the end of a predetermined time period, said circuits from said reactor after the pressure has been raised to atmospheric and the temperature decreased to about 300° C.
Claim 5
Independent Claim
165 words
A method of manufacturing monolythic integrated circuits, comprising the successive steps of: feeding said circuits into a PECVD deposition reactor; providing, inside said reactor, an inert atmosphere controlled at a pressure of about 1.5 Torr, by a nitrogen stream infeed; initiating an aluminum annealing treatment by raising the temperature to a value of about 450° C. and injecting a stream of SiH 4 and N 2 ; initiating, after a predetermined time period and while continuing the aluminum annealing treatment, a deposition of a passivating film, following further lowering of the pressure down to about 1 Torr, by the infeed of a stream of SiH 4 , PH 3 , Argon, and NO, and concurrent generation of a deposition plasma therefrom; flushing the interior of said reactor by the infeed of a nitrogen stream; and unloading, at the end of a predetermined time period, said circuits from said reactor after the pressure has been raised to atmospheric and the temperature decreased to about 300° C.
Claim 6
Dependent Claim
24 words
The method of claim 1, wherein the steps are carried out in the presence of hydrogen formed by the decomposition of a silicon-hydrogen compound.
Claim 7
Dependent Claim
89 words
In a process of manufacturing monolithic silicon integrated circuits having aluminum contacts and subjected to an aluminum annealing treatment in the presence of hydrogen to lower contact resistance and reduce residual valence forces and to a passivation treatment to increase the lifetime of the circuits, the improvement of increasing the yield of satisfactory circuits by the steps of: (a) partly simultaneously carrying out the annealing treatment and the passivation treatment at a pressure of 1-1.5 Torr and at a temperature of about 450° C. in the presence of hydrogen.
Claim 8
Dependent Claim
89 words
In a process of manufacturing monolithic silicon integrated circuits having aluminum contacts and subjected to an aluminum annealing treatment in the presence of hydrogen to lower contact resistance and reduce residual valence forces and to a passivation treatment to increase the lifetime of the circuits, the improvement of increasing the yield of satisfactory circuits by the steps of: (a) partly simultaneously carrying out the annealing treatment and the passivation treatment at a pressure of 1-1.5 Torr and at a temperature of about 450° C. in the presence of hydrogen.
Claim 9
Dependent Claim
144 words
The process of claim 5, wherein step (a) is carried out by: (b) providing the circuits in a PECVD deposition reactors, (c) raising the temperature in the reactor to about 450° C. and providing in the reactor an atmosphere of 1-1.5 Torr, (d) introducing into the reactor a silicon-hydrogen compound to cause decomposition thereof to produce free hydrogen to initiate the aluminum annealing treatment, (e) thereafter introducing into the reactor a gas stream including a silicon-hydrogen compound and generating a deposition plasma within the reactor to produce free hydrogen to continue the aluminum annealing treatment while simultaneously initiating the deposition of a passivating film on the surface of the integrated circuits, the temperature of the reactor being maintained at about 450° C. and the atmosphere at 1-1.5 Torr, (f) thereafter raising the reactor atmosphere to atmospheric pressure and reducing its temperature below 420° C.
Claim 10
Dependent Claim
17 words
The process of claim 6, wherein the silicon-hydrogen compound supplied during steps (d) and (e) is silane.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-23 | 1993-10-23 | 1994-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-23 | 1997-10-23 | 1998-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-23 | 2001-10-23 | 2002-04-24 | $7700.00 | Window Closed / Lapsed |