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EP0225224A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

After oxide metal alloy process

Assignee: Thomson Components-Mostek Corp
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Filing: 1986-10-22
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Granted: —
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Expires: 2006-10-22
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Abstract

Abstract A process for manufacturing a semiconductor device eliminating a post-metalization heat treatment that results in fewer hillocks and improved ohmic contacts. Semiconductor devices having metalization are processed by maintaining the device at a first temperature below about 275°C subsequent to the deposition of the metalization layer and prior to the deposition of the topcoat silicon dioxide material. Then the layer of silicon dioxide is deposited at a second temperature greater than about 375°C. Preferably, double-level metalization devices are processed by maintaining the device at a first temperature below about 275°C subsequent to the deposition of the first layer of metal and prior to the deposition of the interlevel dielectric silicon dioxide. The interlevel dielectric layer of silicon dioxide is deposited at a second temperature greater than about 275°C and then the second layer of metalization is deposited. The topcoat layer of silicon dioxide is deposited at a third temperature greater than about 375°C.

Inventors

  • 👤 Clay Hafer Craig

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-30 22:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/65; H10P14/6516; H10P14/6548; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69215

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 84 words
A method of manufacturing a semiconductor device by depositing a layer of metalization and depositing a layer of silicon dioxide wherein the improvement comprises: a) maintaining the device at a first temperature below about 275°C subsequent to the deposition of the layer of metal and prior to the deposition of the silicon dioxide; and b) depositing the layer of silicon dioxide at a second temperature greater than about 375°C, resulting in fewer hillocks per square centimeter of metal area and a lower ohmic contact.
Claim 2
Independent Claim 84 words
A method of manufacturing a semiconductor device by depositing a layer of metalization and depositing a layer of silicon dioxide wherein the improvement comprises: a) maintaining the device at a first temperature below about 275°C subsequent to the deposition of the layer of metal and prior to the deposition of the silicon dioxide; and b) depositing the layer of silicon dioxide at a second temperature greater than about 375°C, resulting in fewer hillocks per square centimeter of metal area and a lower ohmic contact.
Claim 3
Dependent Claim 16 words
The method as recited in claim 1 wherein the first temperature is maintained below about 215°C.
Claim 4
Dependent Claim 39 words
The method as recited in claim 1 wherein a dielectric layer of silicon dioxide is deposited at a temperature below about 310°C prior to deposition of the layer of silicon dioxide at the second temperature greater than about 375°C.
Claim 5
Independent Claim 132 words
The method of processing a double-level metalization semiconductor device by depositing a first layer of metal, depositing an interlevel dielectric layer of silicon dioxide, depositing a second layer of metalization and depositing a topcoat layer of silicon dioxide wherein the improvement comprises: a) maintaining the device at a first temperature below about 275°C subsequent to the deposition of the first layer of metal and prior to the deposition of the interlevel dielectric layer of silicon dioxides; b) depositing the interlevel dielectric layer of silicon dioxide at a second temperature less than about 425°C; c) depositing the second layer of metalization; and d) depositing the topcoat layer of silicon dioxide at a third temperature greater than about 375°C, resulting in fewer hillocks per square centimeter of metal area and a lower ohmic contact.
Claim 6
Independent Claim 132 words
The method of processing a double-level metalization semiconductor device by depositing a first layer of metal, depositing an interlevel dielectric layer of silicon dioxide, depositing a second layer of metalization and depositing a topcoat layer of silicon dioxide wherein the improvement comprises: a) maintaining the device at a first temperature below about 275°C subsequent to the deposition of the first layer of metal and prior to the deposition of the interlevel dielectric layer of silicon dioxides; b) depositing the interlevel dielectric layer of silicon dioxide at a second temperature less than about 425°C; c) depositing the second layer of metalization; and d) depositing the topcoat layer of silicon dioxide at a third temperature greater than about 375°C, resulting in fewer hillocks per square centimeter of metal area and a lower ohmic contact.
Claim 7
Dependent Claim 20 words
The method as recited in claim 4 wherein the first temperature is maintained at a temperature lower than about 215°C.
Claim 8
Dependent Claim 27 words
The method as recited in claim 5 wherein the interlevel dielectric layer of silicon dioxide is deposited at a second temperature from about 275°C to about 310°C.

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