US4918494A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film transistor
Assignee: Sharp Corp
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Filing: 1989-01-31
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Granted: 1990-04-17
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Expires: 2009-01-31
Abstract
Abstract A thin film transistor which includes an insulative substrate, and a gate electrode, a gate insulating film, a semi-conductor film, a source electrode, and a drain electrode, which are all laminated in that order onto the insulating substrate in the form of an array. The gate electrode is made of tantalum, and the gate insulating film is formed into a double-layered construction of an anodized tantalum film and a silicon nitride film, while the semi-conductor film is provided at each intersection between the gate electrode and the source electrode.
Inventors
- 👤 Mitsuhiro Koden
- 👤 Hirohisa Tanaka
- 👤 Kohzo Yano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:32
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
195 words
A thin film transistor, comprising: an insulative substrate having a relatively planar transistor supporting surface; a gate electrode bus of a first width disposed on said supporting surface of said substrate and extending along said surface in a first lateral direction and having a transistor forming a portion, thereof, functioning as a transistor gate; a gate insulating film disposed atop at least said transistor forming portion of said gate electrode bus; a semiconductor film disposed atop said gate insulating film; a source electrode bus disposed atop said semiconductor film and extending along a second lateral direction orthogonal to said first lateral direction, said source electrode bus having a branch portion of a second width disposed atop said semiconductor film extending substantially parallel to said first lateral direction, said second width being smaller than said first width; and a drain electrode, disposed atop said semiconductor film without intersecting said source electrode bus, wherein said branch portion extends over a first portion of said semiconductor film such that the entirety of said branch portion is disposed over said gate electrode bus with no portion of said branch portion extending over an edge of said gate electrode bus.
Claim 2
Dependent Claim
195 words
A thin film transistor, comprising: an insulative substrate having a relatively planar transistor supporting surface; a gate electrode bus of a first width disposed on said supporting surface of said substrate and extending along said surface in a first lateral direction and having a transistor forming a portion, thereof, functioning as a transistor gate; a gate insulating film disposed atop at least said transistor forming portion of said gate electrode bus; a semiconductor film disposed atop said gate insulating film; a source electrode bus disposed atop said semiconductor film and extending along a second lateral direction orthogonal to said first lateral direction, said source electrode bus having a branch portion of a second width disposed atop said semiconductor film extending substantially parallel to said first lateral direction, said second width being smaller than said first width; and a drain electrode, disposed atop said semiconductor film without intersecting said source electrode bus, wherein said branch portion extends over a first portion of said semiconductor film such that the entirety of said branch portion is disposed over said gate electrode bus with no portion of said branch portion extending over an edge of said gate electrode bus.
Claim 3
Dependent Claim
31 words
The transistor of claim 1, wherein said gate electrode bus is tantalum and said gate insulating film is a double layered construction of anodized tantalum film and a silicon nitride film.
Claim 4
Dependent Claim
19 words
A thin film transistor as claimed in claim 1, wherein said semiconductor film is an amorphous silicon thin film.
Claim 5
Dependent Claim
185 words
A thin film transistor, comprising: an insulative substrate having a relatively planar transistor supporting surface; a gate electrode bus disposed on said supporting surface of said substrate and extending along said surface in a first lateral direction, said gate electrode bus having an edge and having a transistor forming a portion, thereof, functioning as a transistor gate; a gate insulating film disposed atop at least said transistor forming portion of said gate electrode bus; a semiconductor film disposed atop said gate insulating film; a source electrode bus disposed atop said semiconductor film and extending along a second lateral direction orthogonal to said first lateral direction, but substantially in the plane of said supporting surface; said source electrode bus having a branch portion extending therefrom and the entirety of said branch portion is disposed over said portion of said transistor gate without extending over a substantial portion of said edge thereof to thereby reduce gate to source leakage; and a drain electrode disposed atop said semiconductor film, parallel to said branch portion and extending over portion of said transistor gate without intersecting said source electrode bus.
Claim 6
Dependent Claim
185 words
A thin film transistor, comprising: an insulative substrate having a relatively planar transistor supporting surface; a gate electrode bus disposed on said supporting surface of said substrate and extending along said surface in a first lateral direction, said gate electrode bus having an edge and having a transistor forming a portion, thereof, functioning as a transistor gate; a gate insulating film disposed atop at least said transistor forming portion of said gate electrode bus; a semiconductor film disposed atop said gate insulating film; a source electrode bus disposed atop said semiconductor film and extending along a second lateral direction orthogonal to said first lateral direction, but substantially in the plane of said supporting surface; said source electrode bus having a branch portion extending therefrom and the entirety of said branch portion is disposed over said portion of said transistor gate without extending over a substantial portion of said edge thereof to thereby reduce gate to source leakage; and a drain electrode disposed atop said semiconductor film, parallel to said branch portion and extending over portion of said transistor gate without intersecting said source electrode bus.
Claim 7
Dependent Claim
33 words
The thin film transistor of claim 4, wherein said gate electrode bus is tantalum and said gate insulating film is a double layered construction of anodized tantalum film and a silicon nitride film.
Claim 8
Dependent Claim
17 words
The thin film transistor of claim 4, wherein said semiconductor film is an amorphous silicon thin film.
Claim 9
Dependent Claim
43 words
The thin film transistor of claim 4, wherein said gate electrode bus is tantalum and said gate insulating film is a double layered construction of anodized tantalum film and a silicon nitride film, and said semiconductor film is an amorphous silicon thin film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-16 | 1993-10-16 | 1994-04-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-16 | 1997-10-16 | 1998-04-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-16 | 2001-10-16 | 2002-04-17 | $7700.00 | Window Closed / Lapsed |