US4914057A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Contacting method and structure for integrated circuit pads
Assignee: STMicroelectronics SA
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Filing: 1988-07-15
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Granted: 1990-04-03
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Expires: 2008-07-15
Abstract
Abstract The instant invention relates to a process for forming protruding contacts on an integrated circuit aluminum pad, comprising the following steps: providing beneath the aluminum pad (21) a conductive polycrystalline silicone layer (23); locally removing the aluminum layer for uncovering a portion of the surface of the polycrystalline silicon layer; establishing a connection with the polycrystalline silicon layer by means of a drop of conductive adhesive (30).
Inventors
- 👤 Jean-Pierre Gloton
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:13
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/20; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4451; H10W20/4473; H10W72/251
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
59 words
A method for contacting an integrated circuit aluminum pad, comprising the following steps: providing beneath the aluminum a conductive underlayer constituted of a material ensuring a good electrical contact with aluminum; locally removing the aluminum layer for uncovering a portion of the underlayer surface; and establishing a connection with the underlayer by means of a drop of conductive adhesive.
Claim 2
Independent Claim
59 words
A method for contacting an integrated circuit aluminum pad, comprising the following steps: providing beneath the aluminum a conductive underlayer constituted of a material ensuring a good electrical contact with aluminum; locally removing the aluminum layer for uncovering a portion of the underlayer surface; and establishing a connection with the underlayer by means of a drop of conductive adhesive.
Claim 3
Independent Claim
58 words
A method for forming projection contacts onto an integrated circuit aluminum pad, comprising the following steps: providing beneath the aluminum pad a conductive polycrystalline silicon layer; locally removing the aluminum layer for uncovering a portion of the polycrystalline silicon layer surface; and establishing a connection with the polycrystalline silicon layer by means of a drop of conductive adhesive.
Claim 4
Independent Claim
58 words
A method for forming projection contacts onto an integrated circuit aluminum pad, comprising the following steps: providing beneath the aluminum pad a conductive polycrystalline silicon layer; locally removing the aluminum layer for uncovering a portion of the polycrystalline silicon layer surface; and establishing a connection with the polycrystalline silicon layer by means of a drop of conductive adhesive.
References Cited (Backward Citations)
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Cited
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Cited
GB1525148A
Cited
FR2492164A1
Cited
US4442966A
Cited
US4666737A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-02 | 1993-10-02 | 1994-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-02 | 1997-10-02 | 1998-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-02 | 2001-10-02 | 2002-04-03 | $7700.00 | Window Closed / Lapsed |