US4908685A
Expired / Lapsed
US
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Magnetoelectric transducer
Assignee: Asahi Kasei Corp
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Filing: 1989-03-15
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Granted: 1990-03-13
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Expires: 2009-03-15
Abstract
Abstract A magnetoelectric transducer comprising a group III-V compound semiconductor thin film 14 of 0.1 μm to 10 μm thickness formed as a magnetic field sensing portion on a substrate 12 overlaying an organic insulating layer 13, and a multilayer wire bonding electrode including an ohmic electrode 16 formed on a required area of the thin film and a hard metal layer 17 and a bonding layer 18 which are laminated on the ohmic electrode.
Inventors
- 👤 Ichiro Shibasaki
- 👤 Takashi Kajino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 19:05
CPC Classifications
H; H10; H10N; H10N35/00; H10N35/101; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/07; G01R33/0052; H10N30/00; H10N30/80; H10N30/85; H10N30/853; H10N35/01; H10N35/80; H10N52/00; H10N52/101; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/90; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/5525; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/921; H10W72/923; H10W72/931; H10W72/932; H10W72/951; H10W72/952; H10W74/00; H10W90/00; H10W90/701; H10W90/731; H10W90/736; H10W90/751; H10W90/754; H10W90/756
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
178 words
A compound semiconductor magnetoelectric transducer comprising: a substrate and an organic insulating layer overlaying said substrate; a group III-V compound semiconductor layer of 0.1 to 10μm thickness disposed on said substrate and having a predetermined pattern to provide a magnetic field sensing portion; a plurality of electrodes each formed of a laminated stack of three metal layers; the first metal layer of said laminated stack being continuous to and in ohmic contact with said semiconductor layer and made of a material selected from the group consisting of Cu, Au, Au alloys and Au-Ge alloys; the intermediate layer of said laminated stack providing a mechanical strength above a predetermined value and being formed on said first metal layer and made of a material selected from the group consisting of Ni, Cu and their alloys; the third layer of said laminated stack being provided for wire bonding and being formed on said intermediate layer and made of Au; and said first metal layer, said intermediate metal layer and said third layer each having a thickness of between about 2-5 μm.
Claim 2
Dependent Claim
178 words
A compound semiconductor magnetoelectric transducer comprising: a substrate and an organic insulating layer overlaying said substrate; a group III-V compound semiconductor layer of 0.1 to 10μm thickness disposed on said substrate and having a predetermined pattern to provide a magnetic field sensing portion; a plurality of electrodes each formed of a laminated stack of three metal layers; the first metal layer of said laminated stack being continuous to and in ohmic contact with said semiconductor layer and made of a material selected from the group consisting of Cu, Au, Au alloys and Au-Ge alloys; the intermediate layer of said laminated stack providing a mechanical strength above a predetermined value and being formed on said first metal layer and made of a material selected from the group consisting of Ni, Cu and their alloys; the third layer of said laminated stack being provided for wire bonding and being formed on said intermediate layer and made of Au; and said first metal layer, said intermediate metal layer and said third layer each having a thickness of between about 2-5 μm.
Claim 3
Dependent Claim
64 words
The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said mechanical strength providing metal layer and said bonding surface providing metal layer comprise a single metal layer, disposed immediately below and adjacent to said wire bonding electrode, in ohmic contact with said compound semiconductor layer, said single metal layer having a thickness sufficient to resist at least an ultrasonic bonding force.
Claim 4
Dependent Claim
28 words
The compound semiconductor magnetoelectric transducer as set forth in claim 1 including an inorganic thin insulating layer disposed between said compound semiconductor layer and said organic insulating layer.
Claim 5
Dependent Claim
39 words
The compound semiconductor magnetoelectric transducer as set forth in claim 1 including first and second inorganic thin insulating layers disposed adjacent to the upper and lower surfaces of said compound semiconductor layer to sandwich said compound semiconductor layer therebetween.
Claim 6
Dependent Claim
30 words
The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said compound semiconductor layer is formed of a group III-V compound semiconductor of high electron mobility containing arsenic.
Claim 7
Dependent Claim
25 words
The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said compound semiconductor layer contains at least one of InSb, InAs and InAsP.
Claim 8
Dependent Claim
25 words
The compound semiconductor magnetoelectric transducer as set forth in claim 4 wherein said inorganic insulating layer has a thickness of 500 Å to 2 μm.
Claim 9
Dependent Claim
20 words
The compound semiconductor magnetoelectric transducer as set forth in claim 1 wherein said substrate is formed of ferrite or ceramics.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-12 | 1993-09-11 | 1994-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-12 | 1997-09-11 | 1998-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-12 | 2001-09-11 | 2002-03-13 | $7700.00 | Window Closed / Lapsed |