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US4908331A
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US
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Method of manufacturing a semiconductor device by depositing metal on semiconductor maintained at temperature to form silicide
Assignee: NXP BV
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Filing: 1989-06-21
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Granted: 1990-03-13
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Expires: 2009-06-21
Abstract
Abstract A method of manufacturing a semiconductor device comprises a semiconductor body (1) having a surface (2), which is adjoined by regions of silicon (3, 4, 5 and 6) and regions of insulating material (8 and 9), the regions of silicon being provided with a top layer (10) of a metal silicide by depositing metal on the surface while heating the semiconductor body to a temperature at which metal silicide is formed during the deposition. According to the invention, cobalt or nickel is deposited while the semiconductor body is heated to a temperature at which cobalt or nickel silicide is formed. Thus, metal silicide does not grow over parts of the regions of insulating material adjoining directly the regions of silicon.
Inventors
- 👤 Ivo J. M. M. Raaijmakers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:49
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
101 words
A method of manufacturing a semiconductor device comprising a semiconductor body having a surface which is adjoined by regions of silicon and regions of insulating material, the regions of silicon being provided with a top layer of a metal silicide by depositing metal on the surface and heating the semiconductor body to a temperature at which the metal silicide is formed during the deposition by reaction of the metal with the silicon, characterized in that a metal cobalt or nickel is deposited on the surface, while maintaining the semiconductor body at a temperature at which cobalt or nickel disilicide is formed.
Claim 2
Independent Claim
101 words
A method of manufacturing a semiconductor device comprising a semiconductor body having a surface which is adjoined by regions of silicon and regions of insulating material, the regions of silicon being provided with a top layer of a metal silicide by depositing metal on the surface and heating the semiconductor body to a temperature at which the metal silicide is formed during the deposition by reaction of the metal with the silicon, characterized in that a metal cobalt or nickel is deposited on the surface, while maintaining the semiconductor body at a temperature at which cobalt or nickel disilicide is formed.
Claim 3
Dependent Claim
14 words
A method as claimed in claim 1, characterized in that said metal is cobalt.
Claim 4
Dependent Claim
31 words
A method as claimed in claim 2, characterized in that the semiconductor body is heated during the deposition of cobalt to a temperature which lies between 500° C. and 800° C.
Claim 5
Dependent Claim
31 words
A method as claimed in claim 3, characterized in that the semiconductor body is heated during the deposition of cobalt to a temperature which lies between 580° C. and 660° C.
Claim 6
Dependent Claim
31 words
A method as claimed in claim 1, characterized in that the semiconductor body is heated during the deposition of nickel to a temperature which lies between 750° C. and 900° C.
Claim 7
Dependent Claim
31 words
A method as claimed in claim 5, characterized in that the semiconductor body is heated during the deposition of nickel to a temperature which lies between 800° C. and 880° C.
Claim 8
Dependent Claim
42 words
A method as claimed in claim 1, characterized in that the surface is cleaned before the metal deposition by carrying out a sputter etching treatment, and in that then the metal deposition is carried out directly without exposing the surface to air.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-12 | 1993-09-11 | 1994-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-12 | 1997-09-11 | 1998-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-12 | 2001-09-11 | 2002-03-13 | $7700.00 | Window Closed / Lapsed |