US4907974A
Expired / Lapsed
US
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Method of growing a semiconductor device structure
Assignee: Mitsubishi Electric Corp
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Filing: 1988-01-19
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Granted: 1990-03-13
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Expires: 2008-01-19
Abstract
Abstract A semiconductor device includes a plurality of crystalline layers successively disposed directly on a substrate or on a buffer layer on the substrate and a getter layer comprising a metal of high activity disposed between the substrate or the buffer layer and the plurality of crystalline layers. An MO-CVD crystal growth method for growing a plurality of crystalline layers successively on a substrate or on a substrate having a buffer layer by supplying gases to a reaction tube containing a substrate includes growing a getter layer, including a metal of high activity for removing impurities, on the substrate or the buffer layer before growing a target crystalline layer.
Inventors
- 👤 Yukio Gotoh
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:05
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3218; H10P14/3221; H10P14/3418; H01; H01S; H01S2304/00; H01S2304/04; H01S5/00; H01S5/30; H01S5/32; H01S5/323; H01S5/32308; H01S5/32325; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/80; H10H20/81; H10H20/815
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
115 words
A method of making a crystalline semiconductor device including a plurality of compound semiconductor layers, at least one of said layers including an element such as A1 that can react with impurities such as oxygen during the crystal growth thereof, thereby harming the electronic properties of that layer comprising: growing directly on a surface of a GaAs substrate a layer of A1GaAs as a getter layer for reacting with and removing impurities from the ambient during growth of the layer; growing a layer of GaAs directly on and covering said getter layer as a first buffer layer; and successively growing as a laser structure on said first buffer layer layers of A1GaInP, GaInP, and A1GaInP.
Claim 2
Independent Claim
115 words
A method of making a crystalline semiconductor device including a plurality of compound semiconductor layers, at least one of said layers including an element such as A1 that can react with impurities such as oxygen during the crystal growth thereof, thereby harming the electronic properties of that layer comprising: growing directly on a surface of a GaAs substrate a layer of A1GaAs as a getter layer for reacting with and removing impurities from the ambient during growth of the layer; growing a layer of GaAs directly on and covering said getter layer as a first buffer layer; and successively growing as a laser structure on said first buffer layer layers of A1GaInP, GaInP, and A1GaInP.
Claim 3
Dependent Claim
30 words
The method of claim 1 including growing a second buffer layer of GaAs on said GaAs substrate as the surface of the substrate on which said getter layer is grown.
References Cited (Backward Citations)
JPS5320390A
Cited
JPS55134988A
Cited
US4635343A
Cited
JPS6043880A
Cited
US4569721A
Cited
US4567060A
Cited
US4660208A
Cited
JPS61171242A
Cited
US4706255A
Cited
US4667059A
Cited
US4771433A
Cited
US4750184A
Cited
US4769821A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-03-12 | 1993-09-11 | 1994-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-03-12 | 1997-09-11 | 1998-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-03-12 | 2001-09-11 | 2002-03-13 | $7700.00 | Window Closed / Lapsed |