Manufacture of semiconductor light-emitting device

Abstract

Abstract PURPOSE:To manufacture the title device, a clad layer thereof has a necessary sectional shape, the surface thereof is formed flatly and an active layer thereof is also flattened, with excellent productivity, by growing one part of the clad layer on a semiconductor base body while inhibiting a meltback at the large degree of supercooling and growing it at the small degree of supercooling. CONSTITUTION:A P type Ga1-xAlxAs layer 2 and an N type GaAs layer 3 are grown on an N type GaAs substrate 1 through LPE method, and a striped groove is formed to the surface of the layer 3. Each semiconductor layer is grown on the base body through the LPD method. When a first section 4a in a clad layer 4 is grown at the large degree of supercooling at that time, the meltback of the shoulder, etc. of the striped groove is inhibited. An indentation remains in the groove section in the surface under the state, but the clad layer 4 having a flat surface is formed when a residual section 4b is grown at the small degree of supercooling. Consequently, an active layer 5 and each layer on the layer 5 are also flattened. A P side electrode 8 is formed on a P type GaAs cap layer 7 and an N side electrode 9 on the back of the substrate 1, thus completing a light-emitting element.

Inventors

• 👤 Kazuo Yajima
• 👤 矢島　一夫
• 👤 Katsuto Shima
• 👤 島　克人

Bibliographic Details