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US4904886A Expired / Lapsed US ⏱️ 0.0 years remaining

Gate array with high driving ability cells

Assignee: NEC Corp
•
Filing: 1988-07-20
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Granted: 1990-02-27
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Expires: 2008-07-20
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Abstract

Abstract A gate array for implementing a digital integrated circuit includes first cells and second cells of different kinds which are selectively usable depending upon the application of the gate array, i.e. the first cells for applications which need only a low driving ability and the second cells for applications which need a high driving ability.

Inventors

  • 👤 Toshio Tanahashi

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 15:53
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/173; H03K19/1733; H03K19/1735; H10; H10D; H10D84/00; H10D84/90; Y; Y10; Y10S; Y10S257/00; Y10S257/923

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 115 words
A gate array comprising: a logic area having a first cell and a second cell which is greater in area than said first cell by an integral multiple, wherein said first cell comprises a first transistor group, a first resistor group, and first wiring regions, and said second cell comprises a second transistor group, a second resistor group, and second wiring regions, and wherein said second transistor group is larger than said first transistor group, and said second resistor group has a resistance value lower than a resistance value of said first resistor group; and an input/output buffer area surrounding said logic area for interfacing said logic area to the outside for interchange of signals.
Claim 2
Dependent Claim 115 words
A gate array comprising: a logic area having a first cell and a second cell which is greater in area than said first cell by an integral multiple, wherein said first cell comprises a first transistor group, a first resistor group, and first wiring regions, and said second cell comprises a second transistor group, a second resistor group, and second wiring regions, and wherein said second transistor group is larger than said first transistor group, and said second resistor group has a resistance value lower than a resistance value of said first resistor group; and an input/output buffer area surrounding said logic area for interfacing said logic area to the outside for interchange of signals.
Claim 3
Dependent Claim 23 words
A gate array as claimed in claim 1, wherein a plurality of resistors constituting said first resistor group have a same resistance value.
Claim 4
Dependent Claim 23 words
A gate array as claimed in claim 1, wherein a plurality of resistors constituting said second resistor group have a same resistance value.
Claim 5
Dependent Claim 25 words
A gate array as claimed in claim 1, wherein a plurality of resistors constituting said first resistor group have different resistance values from each other.
Claim 6
Dependent Claim 25 words
A gate array as claimed in claim 1, wherein a plurality of resistors consituting said second resistor group have different resistance values from each other.
Claim 7
Dependent Claim 35 words
A gate array as claimed in claim 1, wherein a plurality of resistors constituting said first resistor group are disposed in an area different from an area in which said first transistor group is disposed.
Claim 8
Dependent Claim 35 words
A gate array as claimed in claim 1, wherein a plurality of resistors constituting said second resistor group are disposed in an area different from an area in which said second transistor group is disposed.
Claim 9
Dependent Claim 31 words
A gate array as claimed in claim 1, wherein a plurality of resistors constituting said first resistor group are distributed in an area in which said first transistor group is disposed.
Claim 10
Dependent Claim 31 words
A gate array as claimed in claim 1, wherein a plurality of resistors constituting said second resistor group are distributed in an area in which said second transistor group is disposed.

References Cited (Backward Citations)

US4161662A Cited
US4523106A Cited
US4750027A Cited
US4566022A Cited
US4611236A Cited
US4760289A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1993-02-26 1993-08-28 1994-02-27 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1997-02-26 1997-08-28 1998-02-27 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2001-02-26 2001-08-28 2002-02-27 $7700.00 Window Closed / Lapsed

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