Charge coupled device capable of efficiently transferring charge

Claim 2

A charge coupled device comprising: a semiconductor substrate of a first conductivity type; a channel region of a second conductivity type formed in a surface area of said semiconductor substrate, extending in one direction and serving as a transfer channel; charge supplying means, substantially adjacent to said channel region in the lateral direction of said channel region, for supplying charge to said channel region; electrode means insulated from said channel region, for applying a control voltage to said channel region to transfer charge through said channel region; and potential control means for efficiently transferring small amounts of charge through at least one subregion of said channel region while transferring large amounts of charge through the entire channel region, including a plurality of electrical barrier regions formed in said channel region extending in said one direction substantially throughout said transfer channel and containing an impurity of the first conductivity type, the impurity concentration of each of said electrical barrier regions being inversely proportional to the distance between it and said charge supplying means and the electrostatic potential energy of each of said electrical barrier regions being set at a level higher than that of said transfer channel and lower than that of said substrate outside of said transfer channel when said control voltage is applied thereto.

Claim 3

The charge coupled device according to claim 1, further comprising an output circuit to which the charge transferred through said channel region is supplied.

Claim 4

The charge coupled device according to claim 2, wherein said channel region has an end portion with a gradually narrowed width toward said output circuit.

Claim 5

A charge coupled device according to claim 3, wherein said electrical barrier regions have different lengths to cause the transferred charge to be gradually combined at said end portion of said channel region.

Claim 6

The charge coupled device according to claim 1, wherein said charge supplying means includes a plurality of photoelectric converting elements and transfer means for transferring charge from said photoelectric converting elements to said channel region.

Claim 7

A charge coupled device according to claim 1, wherein said electrical barrier regions are of the first conductivity type.

Claim 8

A charge coupled device comprising: a semiconductor substrate of a first conductivity type; a channel region of a second conductivity type formed in a surface area of said semiconductor substrate, extending in one direction and serving as a transfer channel; charge supplying means substantially adjacent to said channel region in the lateral direction of said channel region, for supplying charge to said channel region; electrode means insulated from said channel region, for applying a control voltage to said channel region to transfer charge through said channel region; potential control means for efficiently transferring small amounts of charge through at least one subregion of said channel region while transferring large amounts of charge through the entire channel region, including a plurality of electrical barrier regions formed in said channel region extending in said one direction substantially throughout said transfer channel and containing an impurity of the first conductivity type, the electrostatic potential energy of each of said electrical barrier regions being set at a level higher than that of said transfer channel and lower than that of said substrate outside of said transfer channel when said control voltage is applied thereto; and an output circuit to which the charge transferred through said channel region is supplied; wherein said electrical barrier regions have different lengths to cause the transferred charge to be gradually combined at an end portion of said channel region.

Claim 9

A charge coupled device comprising: a semiconductor substrate of a first conductivity type; a channel region of a second conductivity type formed in a surface area of said semiconductor substrate, extending in one direction and serving as a transfer channel; charge supplying means substantially adjacent to said channel region in the lateral direction of said channel region, for supplying charge to said channel region; electrode means insulated from said channel region, for applying a control voltage to said channel region to transfer charge through said channel region; potential control means for efficiently transferring small amounts of charge through at least one subregion of said channel region while transferring large amounts of charge through the entire channel region, including a plurality of electrical barrier regions formed in said channel region extending in said one direction substantially throughout said transfer channel and containing an impurity of the first conductivity type, the electrostatic potential energy of each of said electrical barrier regions being set at a level higher than that of said transfer channel and lower than that of said substrate outside of said transfer channel when said control voltage is applied thereto; and an output circuit to which the charge transferred through said channel region is supplied; wherein said electrical barrier regions have different lengths to cause the transferred charge to be gradually combined at an end portion of said channel region.

Claim 10

A charge coupled device according to claim 7, wherein said end portion of said channel region has a gradually narrowed width toward said output circuit.