Charge coupled transfer arrangement in which majority carriers are used for the charge transfer

Claim 1

A charge coupled transfer arrangement comprising a thin doped semiconductor layer of one conductivity type having majority carriers, a highly resistive material in relation to said semiconductor layer and carrying said semiconductor layer, an insulating layer carried on said semiconductor layer, input electrode means carried on said insulating layer, output electrode means carried on said insulating layer, a plurality of groups of electrodes carried on said insulating layer, said groups of electrodes aligned spaced apart in a row parallel to a predetermined direction of charge transfer and each of said groups comprising individual electrodes extending laterally of said predetermined direction and separated from adjacent electrodes of the same group by respective gaps, means for applying voltages, of such polarity as to repel majority carriers in said semiconductor layer, to said electrodes to transfer said electrical majority carriers adjacent to said row in said direction in said semiconductor layer below said gaps, and means for applying voltage to clear said semiconductor layer of said majority carriers below said electrodes with the exception of areas below said gaps.